US 2022/0068606 A1 · PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Abstract

There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

Claims14

Dependent claims

A plasma processing apparatus comprising:

a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves;
a dielectric window that separates the processing space from the combining space;
an antenna unit having a plurality of antennas configured to radiate the electromagnetic waves to the combining space and functioning as a phased array antenna;
an electromagnetic wave output unit configured to output the electromagnetic waves to the antenna unit;
a stage on which the substrate is placed in the processing space;
a gas supply unit configured to supply a gas for atomic layer deposition (ALD) film formation to the processing space;
and
a controller configured to control the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

5 more elements

A plasma processing method for performing plasma processing on a substrate using a plasma processing apparatus, wherein the plasma processing apparatus includes:

a chamber having a processing space for performing the plasma processing on the substrate and a combining space for combining electromagnetic waves;
a dielectric window that separates the processing space from the combining space;
an antenna unit having a plurality of antennas configured to radiate the electromagnetic waves to the combining space and functioning as a phased array antenna;
an electromagnetic wave output unit configured to output the electromagnetic waves to the antenna unit;
a stage on which the substrate is placed in the processing space;
and a gas supply unit configured to supply a gas for atomic layer deposition (ALD) film formation to the processing space, the plasma processing method comprising:
placing the substrate on the stage;
supplying the gas from the gas supply unit to perform the ALD film formation;
and
moving localized plasma at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

7 more elements

Dependencies are inferred from the claim text.

Plasma processing apparatus and plasma processing method

Life of this patent

Plasma processing apparatus and plasma processing method

Life of this patent

Abstract

Claims14