Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorShinji KUBOTA
Life of this patent
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Abstract
In a plasma processing apparatus of an exemplary embodiment, a radio frequency power source generates radio frequency power for plasma generation. A bias power source periodically applies a pulsed negative direct-current voltage to a lower electrode to draw ions into a substrate support. The radio frequency power source supplies the radio frequency power as one or more pulses in a period in which the pulsed negative direct-current voltage is not applied to the lower electrode. The radio frequency power source stops supply of the radio frequency power in a period in which the pulsed negative direct-current voltage is applied to the lower electrode. Each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears.
Claims14
A plasma processing apparatus comprising:
- a chamber;
- a substrate support configured to support a substrate in the chamber;
- a radio frequency power source configured to generate radio frequency power to generate a plasma from a gas in the chamber;
- and
- a bias power source electrically connected to the substrate support and configured to generate bias power for drawing ions into the substrate support,
- wherein the bias power source is configured to periodically generate a pulsed voltage as the bias power,
- the radio frequency power source is configured to supply the radio frequency power as one or more pulses in a first period in which the pulsed voltage is not applied to the substrate support, and
- the radio frequency power source is configured to generate the radio frequency power such that each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears.
Dependencies are inferred from the claim text.