Ion implanter and ion selection method
AssigneeSony Semiconductor Solutions Corporation
InventorHISAHIRO ANSAI
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Abstract
An ion implanter according to an embodiment of the present disclosure includes: an ion source that includes a plurality of kinds of ions; an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam; an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; and an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.
Claims19
An ion implanter comprising:
- an ion source that includes a plurality of kinds of ions;
- an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam;
- an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam;
- and
- an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.
An ion selection method comprising:
- generating an ion beam including a plurality of kinds of ions;
- and
- changing a trajectory of the ion beam by an interaction between an interaction section and the ion beam, and selecting a desired ion out of the plurality of kinds of ions, the interaction section being disposed inside an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam, extending substantially parallel to an extending direction of the ion beam transport tube, and being fixed at a predetermined electric potential.
Dependencies are inferred from the claim text.