Memory Structure with Doping-Induced Leakage Paths
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Wen Su, Shih-Hao Lin, Jui-Lin Chen, Lien Jung Hung, Ping-Wei Wang
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Abstract
The present disclosure provides semiconductor device and methods of forming the same. A semiconductor device according to the present disclosure includes a gate structure, a source/drain feature adjacent the gate structure, a dielectric layer disclosed over the gate structure and the source/drain feature, a gate contact disposed in the dielectric layer and over the gate structure, and a source/drain contact disposed in the dielectric layer and over the source/drain feature. The dielectric layer is doped with a dopant and the dopant includes germanium or tin.
Claims20
A semiconductor device, comprising:
- a gate structure;
- a source/drain feature adjacent the gate structure;
- a dielectric layer disclosed over the gate structure and the source/drain feature;
- a gate contact disposed in the dielectric layer and over the gate structure;
- a source/drain contact disposed in the dielectric layer and over the source/drain feature;
- and
- wherein the dielectric layer is doped with a dopant,
- wherein the dopant comprises germanium or tin.
A one-time programmable (OTP) memory device, comprising:
- an active region;
- a first gate structure and a second gate structure over the active region;
- a dielectric layer disclosed over the first gate structure and the second gate structure;
- a first source/drain contact disposed between the first gate structure and the second gate structure;
- a second source/drain contact spaced apart from the first source/drain contact by the second gate structure;
- and
- a first gate contact disposed over and electrically coupled to the first gate structure,
- wherein a portion of the first source/drain contact, a portion of the second source/drain contact, and the first gate contact are disposed within the dielectric layer,
- wherein the dielectric layer comprises a dopant,
- wherein the dopant comprises germanium or tin.
A method, comprising:
- receiving a workpiece comprising:
- a dielectric layer,
- a gate contact disposed in the dielectric layer, and
- a source/drain contact adjacent the gate contact and disposed in the dielectric layer;
- and
- after receiving the workpiece, implanting the dielectric layer with a dopant.
Dependencies are inferred from the claim text.