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US 2022/0068412 A1Published application
Read window based on program/erase cycles
AssigneeMicron Technology, Inc.
InventorsVamsi Pavan Rayaprolu, Giuseppina Puzzilli, Karl D. Schuh, Jeffrey S. McNeil, JR., Kishore K. Muchherla, Ashutosh Malshe, Niccolo' Righetti
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Abstract
A first group of memory cells of a memory device can be subjected to a particular quantity of program/erase cycles (PECs) in response to a programming operation performed on a second group of memory cells of the memory device. Subsequent to subjecting the first group of memory cells to the particular quantity of PECs, a data retention capability of the first group of memory cells can be assessed.
Claims20
A method, comprising:
- subjecting a group of memory cells of a memory device to a particular quantity of program/erase cycles (PECs) representative of a desired operating characteristic of the memory device;
- and
- subsequent to subjecting the first group of memory cells to the particular quantity of PECs, assessing a data retention capability of the first group of memory cells.
A system, comprising:
- a processing device;
- and
- a memory device couplable to the processing device,
- wherein the processing device is configured to:
- subject a first group of memory cells of the memory device to a plurality of program/erase cycles (PECs), wherein a quantity of the plurality of PECs is based at least in part on a quantity of programming operations undergone by a second group of memory cells of the memory device;
- and
- determine, subsequent to subjection of the first group of memory cells to the plurality of PECs, an operating characteristic of the first group of memory cells.
4 more elements
An apparatus, comprising:
- a first group of memory cells;
- a second group of memory cells;
- and
- control circuitry coupled to the first and second groups of memory cells, wherein the control circuitry is configured to:
- subject the first group of memory cells to a plurality of program/erase cycles (PECs) at an accelerated rate relative to a rate of PECs associated with programming the second group of memory cells;
- and
- program the second group of memory cells using an initial target voltage corresponding to a particular data retention capability based on the plurality of PECs.
4 more elements
Dependencies are inferred from the claim text.