Flash memory programming check circuit
AssigneeShanghai Huahong Grace Semiconductor Manufacturing Corporation
InventorMingyong HUANG
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Abstract
The present application relates to the technical field of memories, in particular to a flash memory programming check circuit, comprising: a memory cell, wherein a bit line is led out from the memory cell, and a pulse sequence signal with a gradually increasing voltage amplitude is applied to the bit line, so that during a high level period of the pulse sequence signal, the memory cell undergoes a program operation, and during a low level period of the pulse sequence signal, the memory cell undergoes a read detection operation; a pulse sequence generation unit used to generate the pulse sequence signal with a gradually increasing voltage amplitude to the bit line; and a reset unit used to control, when a programming control signal starts to be generated, a voltage of the bit line to drop.
Claims8
A flash memory programming check circuit, the flash memory programming check circuit comprising:
- a memory cell, wherein a bit line is led out from the memory cell, and a pulse sequence signal with a gradually increasing voltage amplitude is applied to the bit line, so that during a high level period of the pulse sequence signal, the memory cell undergoes a program operation, and during a low level period of the pulse sequence signal, the memory cell undergoes a read detection operation;
- a pulse sequence generation unit used to generate the pulse sequence signal to the bit line;
- and
- a reset unit used to control, when a programming control signal starts to be generated, a voltage of the bit line to drop.
Dependencies are inferred from the claim text.