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US 2022/0068407 A1Published application
Determining a read voltage based on a change in a read window
AssigneeMicron Technology, Inc.
InventorsVamsi Pavan Rayaprolu, Giuseppina Puzzilli, Karl D. Schuh, Jeffrey S. McNeil, JR., Kishore K. Muchherla, Ashutosh Malshe, Niccolo' Righetti
Life of this patent
Estimating the term…
Abstract
A change in a read window of a group of memory cells of a memory device that has undergone a plurality of program/erase cycles (PECs) can be determined. read voltage can be determined based at least in part on the determined change in the read window.
Claims20
A method, comprising:
- subjecting a first group of memory cells of a memory device to a particular quantity of program/erase cycles (PECs) at an accelerated rate relative to a rate of PECs associated with programming operations of the memory device, wherein the particular quantity of PECs corresponds to a desired service life of the memory device;
- subsequent to subjection to the particular quantity of PECs, determining a change in a read window of the first group of memory cells;
- and
- determining a read voltage for a second group of memory cells of the memory device based at least in part on the determined change in the read window.
1 more element
(canceled)
A system, comprising:
- a processing device;
- and
- a memory device communicatively coupled to the processing device,
- wherein the processing device is to:
- cause a group of memory cells of the memory device to undergo a particular quantity of program/erase cycles (PECs), wherein the particular quantity of PECs corresponds to a desired service life of the memory device and the group of memory cells are not used to store data;
- determine a first shift, relative to a first initial threshold voltage distribution corresponding to a first data state of the group of memory cells, of a first threshold voltage distribution corresponding to the first data state;
- determine a second shift, relative to a second initial threshold voltage distribution corresponding to a second data state of the group of memory cells, of a second threshold voltage distribution corresponding to the second data state;
- and
- determine a read voltage for the group of memory cells based at least in part on the first shift and the second shift.
6 more elements
(canceled)
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
- subject a first group of memory cells of a memory device to a particular quantity of program/erase cycles (PECs) at an accelerated rate relative to a rate of PECs associated with programming operations of the memory device, wherein the particular quantity of PECs corresponds to a desired service life of the memory device;
- and
- model a performance characteristic of a second group of memory cells of the memory device based at least in part on a performance characteristic of the first group of memory cells subsequent to subjection to the plurality of PECs.
Dependencies are inferred from the claim text.