Efficient read-threshold calculation method for parametric pv-level modeling

A non-transitory computer storage medium storing instructions that, upon execution by the non-transitory computer storage medium, perform operations associated with reading client data from a memory, the operations comprising:

• selecting a first voltage read range and a second voltage read range from a plurality of voltage read ranges that are associated with a number of bits storable in a memory cell, wherein each voltage read range includes a plurality of candidate voltage read levels;
• receiving a first set of parameters that represent a first probability distribution of first candidate voltage read thresholds within the first voltage read range;
• receiving a second set of parameters that represent a second probability distribution of second candidate voltage read thresholds within the second voltage read range;
• generating, based on an input to an objective function, a voltage read threshold, wherein the input comprises the first set of parameters and the second set of parameters, and wherein the voltage read threshold is one of the plurality of candidate voltage read levels;
• and
• reading data stored in the memory cell based on the voltage read threshold.

A system comprising:

• a non-transitory computer storage medium storing instructions that, upon execution by the non-transitory computer storage medium, perform operations associated with reading client data from a memory, the operations comprising:
• selecting a first voltage read range and a second voltage read range from a plurality of voltage read ranges that are associated with a number of bits storable in a memory cell, wherein each voltage read range includes a plurality of candidate voltage read levels;
• receiving a first set of parameters that represent a first probability distribution of first candidate voltage read thresholds within the first voltage read range;
• receiving a second set of parameters that represent a second probability distribution of second candidate voltage read thresholds within the second voltage read range;
• generating, based on an input to an objective function, a voltage read threshold, wherein the input comprises the first set of parameters and the second set of parameters, and wherein the voltage read threshold is one of the plurality of candidate voltage read levels;
• and
• reading data stored in the memory cell based on the voltage read threshold.