Modified write voltage for memory devices

A method, comprising:

• applying a plurality of levels of a read signal to a plurality of memory cells to determine respective characteristics associated with the plurality of memory cells;
• determining, based at least in part on applying the plurality of levels of the read signal, a set of memory cells of the plurality of memory cells that have the respective characteristics satisfying a threshold and are storing a first logic state;
• and
• applying, to the set of memory cells, a second write signal to write memory cells in the set of memory cells to a second logic state based at least in part on the set of memory cells having the respective characteristics satisfying the threshold, the second write signal different from a first write signal to write memory cells to the second logic state for memory cells having the respective characteristics that do not satisfy the threshold.

An apparatus, comprising:

• an array of memory cells that includes a plurality of memory cells;
• a host interface coupled with the array of memory cells, the host interface configured to receive a write command indicating a set of data to be written to the plurality of memory cells;
• a controller coupled with the array of memory cells and the host interface, the controller configured to determine, from the plurality of memory cells, a set of memory cells that have respective characteristics satisfying a threshold and that are to be switched from a first logic state to a second logic state for the write command;
• and
• a write pulse generator coupled with the array of memory cells and the controller, the write pulse generator configured to apply, to the set of memory cells, a second write signal to write memory cells in the set of memory cells to the second logic state based at least in part on the set of memory cells having the respective characteristics satisfying the threshold, the second write signal different from a first write signal to write memory cells to the second logic state for memory cells having the respective characteristics that do not satisfy the threshold.