Memory device, operating method of the same, and memory system
AssigneeSamsung Electronics Co., Ltd.
InventorsMingyu LEE, Jaewoo PARK, Younghoon SON, Youngdon CHOI, Hyungmin JIN, Junghwan CHOI
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AssigneeSamsung Electronics Co., Ltd.
InventorsMingyu LEE, Jaewoo PARK, Younghoon SON, Youngdon CHOI, Hyungmin JIN, Junghwan CHOI
Estimating the term…
A method of operating a memory device including receiving a multilevel signal having M levels transmitted by an external controller through a clock receiving pin, where M is a natural number greater than 2, and decoding the multilevel signal to restore at least one of Data Bus Inversion (DBI) data, Data Mask (DM) data, Cyclic Redundancy Check (CRC) data, or Error Correction Code (ECC) data may be provided. The multilevel signal is a clock signal transmitted by the external controller, and is a signal swinging based on an intermediate reference signal that is an intermediate value between a minimum level and a maximum level among the M levels.
A method of operating a memory device, comprising:
A method of operating a memory device, comprising:
A memory device comprising:
21-22. (canceled)
Dependencies are inferred from the claim text.