Loading patent…
AssigneesAnhui University, Changxin Memory Technologies, Inc.
InventorsZhiting Lin, Jianqing Li, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Wenjuan Lu, Chunyu Peng, Xiulong Wu, Junning Chen
Estimating the term…
A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module configured to read data in a storage unit on a first or second bit line; a control module electrically connected to the amplification module. When data in the storage unit on the first bit line is read, in a first amplification phase of the sense amplifier, the control module configures the amplification module to include a first current mirror structure and connects a mirror terminal of the first current mirror structure to the second bit line; when data in the storage unit on the second bit line is read, in the first amplification phase of the sense amplifier, the control module configures the amplification module to include a second current mirror structure and connects a mirror terminal of the second current mirror structure to the first bit line.
A sense amplifier, comprising:
A memory, comprising a sense amplifier, wherein the sense amplifier comprises:
A method for controlling a sense amplifier comprising an amplification module and a control module, the method for controlling the sense amplifier comprising:
Dependencies are inferred from the claim text.