Method and system for adjusting memory, and semiconductor device

A system for adjusting a memory, wherein the system is applied to the memory, the system comprising:

• a first acquisition circuit, configured to acquire a mapping relationship between a temperature of a transistor, an equivalent width-length ratio of a sense amplifier transistor in a sense amplifier, and an actual time at which data is written into the memory;
• a second acquisition circuit, configured to acquire a current temperature of the transistor;
• a processing circuit, configured to acquire an adjustment mode of the equivalent width-length ratio, based on the current temperature and the mapping relationship;
• and
• an adjusting circuit, configured to adjust the equivalent width-length ratio, based on the adjustment mode, so that the actual time at which the data is written into the memory corresponding to the adjusted equivalent width-length ratio is within a preset writing time.

A semiconductor device, comprising a memory, and a system for adjusting the memory, wherein the system for adjusting the memory is configured to:

• acquire a mapping relationship between a temperature of a transistor, an equivalent width-length ratio of a sense amplifier transistor in a sense amplifier, and an actual time at which data is written into the memory;
• acquire a current temperature of the transistor;
• and
• adjust the equivalent width-length ratio, based on the current temperature and the mapping relationship, so that the actual time at which the data is written into the memory corresponding to the adjusted equivalent width-length ratio is within a preset writing time.