Read calibration based on ranges of program/erase cycles

A method, comprising:

• applying, to a memory cell of a first group of memory cells of a memory device, a signal associated with performance of a memory operation and having a first magnitude, wherein the memory cells of the first group have undergone respective quantities of program/erase cycles (PECs) within a first range of PECs and the first magnitude corresponds to a second range of PECs different than the first range of PECs;
• determining, for the first group of memory cells:
• whether a first difference between a first target voltage corresponding to a first data state and the signal having the first magnitude is at least a threshold value;
• and
• whether a second difference between a second target voltage corresponding to a second data state and the applied signal having the first magnitude is at least the threshold value;
• and
• responsive to determining that, for the first group of memory cells, the first and second differences are at least the threshold value:
• associating the first group of memory cells with a first calibration cluster;
• and
• applying, to a memory cell of a second group of memory cells of the memory device, the signal having a second magnitude, wherein the memory cells of the second group have undergone respective quantities of PECs within the second range of PECs and the second magnitude corresponds to a third range of PECs different than the second range of PECs.