Method of manufacturing semiconductor element, semiconductor element, and substrate

A method of manufacturing a semiconductor element, comprising:

• forming, on a first surface of a substrate, a first deposition inhibiting mask configured to inhibit growth of semiconductor crystals in a predetermined pattern to define a front surface region not covered by the first deposition inhibiting mask as a first crystal growth region, the first surface serving as a starting point of growth of the semiconductor crystals;
• growing semiconductor crystals by vapor-phase growth from the first crystal growth region over the first deposition inhibiting mask to form a semiconductor layer to serve as an element;
• removing the first deposition inhibiting mask;
• and
• separating the semiconductor layer from the substrate,
• wherein after the semiconductor layer is separated from the substrate, a substrate reusing process of using the substrate after separating the semiconductor layer is performed one or more times, the substrate reusing process comprising:
• forming a second deposition inhibiting mask in a region including the first growth region and differing from a formation position of the first deposition inhibiting mask to expose a second crystal growth region not covered by the second deposition inhibiting mask;
• growing semiconductor crystals by vapor-phase growth from the second crystal growth region over the second deposition inhibiting mask adjacent to the second crystal growth region to again form a semiconductor layer to serve as an element;
• removing the second deposition inhibiting mask;
• and
• separating the semiconductor layer that is formed from the substrate.