Substrate processing method, substrate processing apparatus using the same, and semiconductor device manufacturing method
AssigneeWonik Ips Co., Ltd.
InventorsKyung PARK, Hyeon Beom GWON, Dae Seong LEE
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Abstract
The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.
Claims20
A substrate processing method using a substrate processing apparatus which comprises a chamber (10) configured to form a processing space (S) for substrate processing, a substrate support installed in the chamber (10) to support a substrate (1), a gas sprayer installed above the substrate support to spray a gas for performing processes, and a vent configured to vent a gas of the processing space (S) and comprising a valve for controlling a pressure,
- wherein the substrate processing method comprises a pressure changing operation (S1) repeated at least one time,
- wherein the pressure changing operation (S1) comprises:
- a pressurizing operation (S10) of increasing an internal pressure of the chamber (10) from a first pressure (Pi) to a second pressure (Ph) higher than the atmospheric pressure, by injecting a process gas into the processing space (S);
- and
- a depressurizing operation (S30) of decreasing the internal pressure of the chamber (10) from the second pressure (Ph) to a third pressure (Pf),
- wherein a process gas-supplying flow rate (M3) in the depressurizing operation (S30) is lower than a process gas-supplying flow rate (M1) in the pressurizing operation (S10), and
- the third pressure (Pf) is equal to or less than the atmospheric pressure.
A semiconductor device manufacturing method comprising:
- a deposition operation of forming a thin film on a surface;
- and
- a substrate processing operation of improving thin-film properties after performing the deposition process,
- wherein the substrate processing operation is performed at least one time, and
- wherein the substrate processing operation is performed through a substrate processing method, the substrate processing method using a substrate processing apparatus which comprises a chamber (10) configured to form a processing space (S) for substrate processing, a substrate support installed in the chamber (10) to support a substrate (1), a gas sprayer installed above the substrate support to spray a gas for performing processes, and a vent configured to vent a gas of the processing space (S) and comprising a valve for controlling a pressure,
- wherein the substrate processing method comprises a pressure changing operation (S1) repeated at least one time,
- wherein the pressure changing operation (S1) comprises:
- a pressurizing operation (S10) of increasing an internal pressure of the chamber (10) from a first pressure (Pi) to a second pressure (Ph) higher than the atmospheric pressure, by injecting a process gas into the processing space (S);
- and
- a depressurizing operation (S30) of decreasing the internal pressure of the chamber (10) from the second pressure (Ph) to a third pressure (Pf),
- wherein a process gas-supplying flow rate (M3) in the depressurizing operation (S30) is lower than a process gas-supplying flow rate (M1) in the pressurizing operation (S10), and
- the third pressure (Pf) is equal to or less than the atmospheric pressure.
A substrate processing method using a substrate processing apparatus which comprises a chamber (10) configured to form a processing space (S) for substrate processing, a substrate support installed in the chamber (10) to support a substrate (1), a gas sprayer installed above the substrate support to spray a gas for performing processes, and a vent configured to vent a gas of the processing space (S) and comprising a valve for controlling a pressure, wherein the chamber (10) comprises:
- an outer tube (11) which has a protection space formed therein and a first inlet formed in a lower portion thereof;
- and an inner tube (12) which has the processing space (S) formed therein and a second inlet formed in a lower portion thereof, wherein a portion of the inner tube (12) is accommodated in the outer tube (11), and a portion of the inner tube (12), in which the second inlet is formed, protrudes to the outside of the outer tube (11),
- wherein the substrate processing method comprises a pressure changing operation (S1) repeated at least one time,
- wherein the pressure changing operation (S1) comprises:
- a pressurizing operation (S10) of increasing an internal pressure of the inner tube (12) from a first pressure (PO to a second pressure (Ph) higher than the atmospheric pressure, by injecting a process gas into the processing space (S);
- and
- a depressurizing operation (S30) of decreasing the internal pressure of the inner tube (12) from the second pressure (Ph) to a third pressure (Pf),
- wherein a process gas-supplying flow rate (M3) to the inner tube (12) in the depressurizing operation (S30) is lower than a process gas-supplying flow rate (M1) to the inner tube (12) in the pressurizing operation (S10), and
- the third pressure (Pf) is equal to or less than the atmospheric pressure.
A semiconductor device manufacturing method comprising:
- a deposition operation of forming a thin film on a surface;
- and
- a substrate processing operation of improving thin-film properties after performing the deposition process,
- wherein the substrate processing operation is performed at least one time, and
- wherein the substrate processing operation is performed through a substrate processing method, the substrate processing method using a substrate processing apparatus which comprises a chamber (10) configured to form a processing space (S) for substrate processing, a substrate support installed in the chamber (10) to support a substrate (1), a gas sprayer installed above the substrate support to spray a gas for performing processes, and a vent configured to vent a gas of the processing space (S) and comprising a valve for controlling a pressure, wherein the chamber (10) comprises:
- an outer tube (11) which has a protection space formed therein and a first inlet formed in a lower portion thereof;
- and an inner tube (12) which has the processing space (S) formed therein and a second inlet formed in a lower portion thereof, wherein a portion of the inner tube (12) is accommodated in the outer tube (11), and a portion of the inner tube (12), in which the second inlet is formed, protrudes to the outside of the outer tube (11),
- wherein the substrate processing method comprises a pressure changing operation (S1) repeated at least one time,
- wherein the pressure changing operation (S1) comprises:
- a pressurizing operation (S10) of increasing an internal pressure of the inner tube (12) from a first pressure (PO to a second pressure (Ph) higher than the atmospheric pressure, by injecting a process gas into the processing space (S);
- and
- a depressurizing operation (S30) of decreasing the internal pressure of the inner tube (12) from the second pressure (Ph) to a third pressure (Pf),
- wherein a process gas-supplying flow rate (M3) to the inner tube (12) in the depressurizing operation (S30) is lower than a process gas-supplying flow rate (M1) to the inner tube (12) in the pressurizing operation (S10), and
- the third pressure (Pf) is equal to or less than the atmospheric pressure.
Dependencies are inferred from the claim text.