Method and system for forming metal silicon oxide and metal silicon oxynitride layers
AssigneeASM IP Holding B.V.
InventorsTakashi Yoshida, René Vervuurt
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Abstract
Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.
Claims27
A method of forming one or more of a metal silicon oxide layer and a metal silicon oxynitride layer, the method comprising the steps of:
- providing a substrate within a reaction chamber of a reactor;
- providing a silicon precursor to the reaction chamber for a silicon precursor pulse period;
- providing a first metal precursor to the reaction chamber for a first metal precursor pulse period;
- and
- providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.
A system comprising:
- one or more reaction chambers;
- a silicon precursor source;
- a first metal precursor source;
- a first reactant source;
- a plasma power source;
- an exhaust source;
- and
- a controller,
- wherein the controller is configured to control gas flow of a silicon precursor, a first metal precursor, and a first reactant into at least one of the one or more reaction chambers to form a metal silicon oxide layer or a metal silicon oxynitride layer on a surface of a substrate, and
- wherein a pulse period of the gas flow of the silicon precursor and a pulse period of the gas flow of the first metal precursor overlap within the at least one of the one or more reaction chambers.
Dependencies are inferred from the claim text.