Methods of selective deposition
AssigneeApplied Materials, Inc.
InventorsWenjing Xu, Gang Shen, Yufei Hu, Feng Chen, Tae Hong Ha
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Abstract
Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.
Claims20
A method of selective deposition, the method comprising:
- exposing a substrate comprising a conductive material and a dielectric material to a silyl amine of the general formula ((CH3)2N)xSi(CH3)y((CH2)zCH3), where x is 1-3, y is 0-2, x+y equals 3, and z is 0-17 to selectively form a surfactant layer on the dielectric material;
- and
- selectively depositing a film on the conductive material.
A method of improving selectivity, the method comprising exposing a substrate comprising a conductive material with oxide contaminants and a dielectric material with —OH surface terminations to a plasma formed from a nitrogen-containing gas to remove the oxide contaminants and form —NH surface terminations on the dielectric material.
A method of selective deposition, the method comprising:
- exposing a substrate comprising a conductive material with oxide contaminants and a dielectric material with —OH surface terminations to a plasma formed from a nitrogen-containing gas to remove the oxide contaminants and form —NH surface terminations on the dielectric material;
- exposing the substrate to a silyl amine of the general formula (N(CH3)2)xSi(CH3)y((CH2)zCH3), where x is 1-3, y is 0-2, x+y equals 3, and z is 0-5 to selectively form a surfactant layer on the dielectric material;
- and
- selectively depositing a film on the conductive material.
Dependencies are inferred from the claim text.