Quantum dot light emitting diode, manufacturing method thereof, and display device
AssigneesBeijing BOE Technology Development Co., Ltd., Boe Technology Group Co., Ltd.
InventorAidi ZHANG
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Abstract
The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.
Claims20
A quantum dot light emitting diode, comprising an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, and an electron transport layer disposed between the quantum dot layer and the cathode layer, wherein,
- the quantum dot light emitting diode further comprises an electron blocking layer disposed between the electron transport layer and the quantum dot layer,
- metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and
- the metal sulfur bonds contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.
A manufacturing method of a quantum dot light emitting diode, comprising steps of forming an anode layer, a cathode layer, a quantum dot layer between the anode layer and the cathode layer, and an electron transport layer between the quantum dot layer and the cathode layer, wherein the manufacturing method further comprises:
- a step of forming an electron blocking layer between the electron transport layer and the quantum dot layer,
- metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and
- the metal-sulfur bonds contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.
Dependencies are inferred from the claim text.