Polishing slurry composition
AssigneeKctech Co., Ltd.
InventorsSoo Wan CHOI, Jung Yoon KIM, Nak Hyun CHOI, Hae Won YANG
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Abstract
The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.
Claims22
A polishing slurry composition comprising:
- a polishing solution comprising abrasive particles;
- and
- an additive solution comprising a non-ionic (macromolecule) polymer and a selectivity control agent.
Dependencies are inferred from the claim text.