# US 2022/0051871 A1 · Pattern formation method and template manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0051871 A1 - Document ID: US20220051871A1 - Status: Published application - Kind: A1 - Application number: 17/392,571 - Filed: 2021-08-03 - Published: 2022-02-17 - Earliest claimed: 2020-08-12 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Ryota SEKI - Web page: https://patentgrep.com/patent/US20220051871A1 ## CPC - H01J 37/3175: {Projection methods, i.e. transfer substantially complete pattern to substrate} - B29C 33/3842: {Manufacturing moulds, e.g. shaping the mould surface by machining} - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - H01J 2237/31777: by projection - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - B29C: SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING (making preforms B29B11/00; making laminated products by combining previously unconnected layers which become one product whose layers will remain together B32B37/00 - B32B41/00) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract According to one embodiment, a pattern formation method includes placing an imprint resist film on a substrate, then imprinting a pattern in the imprint resist film. The pattern has a first loop section in a first end portion and a second loop section in a second end portion. After the imprint resist film has been patterned, it is selectively irradiated between the first loop section and the second loop section. The imprint resist film is then etched under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film. ## Claims ### Claim 1 A pattern formation method, comprising: placing an imprint resist film on a substrate; imprinting a pattern in the imprint resist film, the pattern having a first loop section in a first end portion and a second loop section in a second end portion; selectively irradiating the patterned imprint resist film between the first loop section and the second loop section; and etching the imprint resist film under conditions leaving the selectively irradiated portion of the imprint resist film and removing the unirradiated portion of the imprint resist film. ### Claim 2 (depends on 1) The pattern formation method according to claim 1, wherein the selective irradiation is performed with an electron beam. ### Claim 3 (depends on 1) The pattern formation method according to claim 1, wherein a region of the imprint resist film corresponding to an alignment mark is also selectively irradiating before the etching. ### Claim 4 (depends on 1) The pattern formation method according to claim 1, wherein the pattern is formed on an imprint template by a side wall transfer process. ### Claim 5 (depends on 1) The pattern formation method according to claim 1, wherein the substrate is quartz. ### Claim 6 (depends on 1) The pattern formation method according to claim 1, wherein the substrate is an imprint template including a mesa structure. ### Claim 7 (depends on 1) The pattern formation method according to claim 1, further comprising: after the etching of the imprint resist film, etching a hard mask layer on the substrate using the etched imprint resist film as a mask. ### Claim 8 (depends on 7) The pattern formation method according to claim 7, further comprising: after the etching of the hard mask layer, etching the substrate using the etched hard mask layer as a mask. ### Claim 9 A patterning method, comprising: obtaining a first imprint template including a line and space pattern formed by a side wall transfer process, the line and space pattern including a first loop end portion at one end and a second loop end portion at another end; performing an imprint lithography process on a substrate using the first imprint template to transfer the line and space pattern to an imprint resist on the substrate; after the imprint lithography process, radiation hardening a portion of the imprint resist between the first loop end portion and the second loop end portion; etching the imprint resist to remove the portions of the imprint resist that were not radiation hardened and leave the portions of the imprint resist that were radiation hardened; and etching the substrate using the remaining portions of the radiation hardened imprint resist as a mask. ### Claim 10 (depends on 9) The patterning method according to claim 9, wherein the radiation hardening is performed with an electron beam. ### Claim 11 (depends on 9) The patterning method according to claim 9, wherein a region of the imprint resist corresponding to an alignment mark is also radiation hardened. ### Claim 12 (depends on 9) The patterning method according to claim 9, wherein the substrate is quartz. ### Claim 13 (depends on 9) The patterning method according to claim 9, wherein the substrate is a second imprint template including a mesa structure. ### Claim 14 (depends on 9) The patterning method according to claim 9, wherein etching the substrate comprises etching a hard mask layer on the substrate using the previously etched imprint resist as a mask. ### Claim 15 (depends on 14) The patterning method according to claim 14, wherein the substrate is quartz, and the hard mask comprises chrome. ### Claim 16 A template manufacturing method, comprising: forming a hard mask film on a substrate; forming a resist film on the hard mask film; patterning the resist film to have a pattern including a first loop section in a first end portion of a line-space pattern and a second loop section in a second end portion of the line-space pattern; irradiating the resist between the first loop section and the second loop section; removing the portions of the resist not irradiated; and etching the mask film and the substrate using the remaining resist film. ### Claim 17 (depends on 16) The template manufacturing method according to claim 16, wherein the irradiating is with an electron beam. ### Claim 18 (depends on 16) The template manufacturing method according to claim 16, wherein a region in the resist film corresponding to an alignment mark formed in the resist film is also irradiated. ### Claim 19 (depends on 16) The template manufacturing method according to claim 16, wherein the substrate is quartz. ### Claim 20 (depends on 16) The template manufacturing method according to claim 16, wherein the patterning of the resist film is performed by imprint lithography.