# US 2022/0045596 A1 · Drive circuit for power semiconductor element and power semiconductor module employing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0045596 A1 - Document ID: US20220045596A1 - Status: Published application - Kind: A1 - Application number: 17/290,996 - Filed: 2018-12-11 - Published: 2022-02-10 - Earliest claimed: 2018-12-11 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Takeshi HORIGUCHI - Web page: https://patentgrep.com/patent/US20220045596A1 ## CPC - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H02P 29/68: based on the temperature of a drive component or a semiconductor component - H02M 1/0009: {Devices or circuits for detecting current in a converter} - H02M 1/0012: {Control circuits using digital or numerical techniques (in DC/DC converters H02M3/157, H02M3/33515; in DC-AC converters H02M7/53873)} - H02M 1/0048: {Circuits or arrangements for reducing losses (using snubbers H02M1/34)} - H02M 1/0054: {Transistor switching losses (periodically suspending operation of switching converter in low power mode H02M1/0035)} - H02P 29/027: {the fault being an over-current} - H03K 17/0828: {in composite switches} - H02M 7/53871: {with automatic control of output voltage or current} - H02P 27/08: with pulse width modulation - H03K 2017/0806: {against excessive temperature} - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H02P: CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract A drive circuit drives a power semiconductor element including a control terminal, a first main electrode, and a second main electrode. The drive circuit includes a first switching-off circuit and a second switching-off circuit each for turning off the power semiconductor element. The second switching-off circuit is lower in impedance than the first switching-off circuit. In a case where the power semiconductor element is turned off, only the first switching-off circuit operates when the power semiconductor element is in an unusual state, and the first switching-off circuit and the second switching-off circuit complementarily operate when the power semiconductor element is in a normal state. ## Claims ### Claim 1 A drive circuit for a power semiconductor element, the drive circuit serving to drive a power semiconductor element including a control terminal, a first main electrode, and a second main electrode, the drive circuit comprising: a first switching-off circuit and a second switching-off circuit each to turn off the power semiconductor element, wherein an impedance of the second switching-off circuit is lower than that of the first switching-off circuit, and in a case where the power semiconductor element is turned off, only the first switching-off circuit operates when the power semiconductor element is in an unusual state, and the first switching-off circuit and the second switching-off circuit complementarily operate in an order of the first switching-off circuit, the second switching-off circuit, and the first switching-off circuit when the power semiconductor element is in a normal state. ### Claim 2 (canceled) ### Claim 3 (depends on 1) The drive circuit for a power semiconductor element according to claim 1, wherein the first switching-off circuit includes a first turning-off gate resistor and a first turning-off switch between the control terminal of the power semiconductor element and a reference potential, the second switching-off circuit includes a second turning-off gate resistor, a second turning-off switch, and a voltage source between the control terminal of the power semiconductor element and a reference potential, a terminal on a high potential side of the voltage source is connected to the reference potential, and the resistance value of the first turning-off gate resistor is greater than that of the second turning-off gate resistor. ### Claim 4 (depends on 1) The drive circuit for a power semiconductor element according to claim 1, wherein the first switching-off circuit includes a first turning-off gate resistor, a first turning-off switch, and a first voltage source between the control terminal of the power semiconductor element and a reference potential, a terminal on a high potential side of the first voltage source is connected to the reference potential, the second switching-off circuit includes a second turning-off gate resistor, a second turning-off switch, and a second voltage source between the control terminal of the power semiconductor element and the reference potential, a terminal on a high potential side of the second voltage source is connected to the reference potential, and the resistance value of the first turning-off gate resistor is greater than that of the second turning-off gate resistor, and the voltage of the first voltage source is lower than that of the second voltage source. ### Claim 5 (depends on 1) The drive circuit for a power semiconductor element according to claim 1, wherein the first switching-off circuit includes a first turning-off gate resistor, a first turning-off switch, and a first voltage source between the control terminal of the power semiconductor element and a reference potential, a terminal on a high potential side of the first voltage source is connected to the reference potential, the second switching-off circuit includes a second turning-off gate resistor, a second turning-off switch, and a second voltage source between the control terminal of the power semiconductor element and the reference potential, a terminal on a high potential side of the second voltage source is connected to a low potential side of the first voltage source, and the resistance value of the first turning-off gate resistor is greater than that of the second turning-off gate resistor. ### Claim 6 (depends on 3) The drive circuit for a power semiconductor element according to claim 3, wherein the second switching-off circuit includes an operating time period setting unit to set a time period during which the second switching-off circuit operates, an unusual state detection unit to detect an unusual state of the power semiconductor element, and a logical operation circuit to perform a logical operation of an output of the operating time period setting unit and an output of the unusual state detection unit, and an output of the logical operation circuit is connected to a control terminal of the second turning-off switch. ### Claim 7 (depends on 6) The drive circuit for a power semiconductor element according to claim 6, further comprising an interterminal voltage detector to detect an interterminal voltage between the first main electrode and the second main electrode of the power semiconductor element, and output an operating time period setting signal having a value showing the interterminal voltage, wherein the operating time period setting unit includes a first comparator to compare the operating time period setting signal with a first reference voltage, and a one-shot pulse circuit to receive an output from the first comparator, wherein an output from the one-shot pulse circuit is sent to the logical operation circuit, the first reference voltage is higher than a first voltage determined in advance and lower than a second voltage determined in advance, the first voltage is an interterminal voltage between the first main electrode and the second main electrode in the power semiconductor element in a conducting state, and the second voltage is an interterminal voltage between the first main electrode and the second main electrode in the power semiconductor element in a blocking state. ### Claim 8 (depends on 6) The drive circuit for a power semiconductor element according to claim 6, further comprising an interterminal voltage detector to detect an interterminal between the first main electrode and the second main electrode in the power semiconductor element, and output an operating time period setting signal having a value showing the interterminal voltage, wherein the operating time period setting unit includes a second comparator to compare the operating time period setting signal with a second reference voltage, a third comparator to compare the operating time period setting signal with a third reference voltage, and a logical product circuit to output a logical product of an output from the second comparator and an output from the third comparator, wherein an output from the logical product circuit is sent to the logical operation circuit, the second reference voltage is an interterminal voltage between the first main electrode and the second main electrode in the power semiconductor element in a conducting state, and the third reference voltage is an interterminal voltage between the first main electrode and the second main electrode in the power semiconductor element in off blocking state. ### Claim 9 (depends on 6) The drive circuit for a power semiconductor element according to claim 6, further comprising: a gate current detection unit to detect a gate current flowing out of the control terminal of the power semiconductor element; and an integrator to integrate an output signal from the gate current detection unit, and output an operating time period setting signal having a value showing an amount of a gate charge flowing out of the control terminal of the power semiconductor element, wherein the operating time period setting unit includes a fourth comparator to compare the operating time period setting signal with a fourth reference voltage, and a one-shot pulse circuit to receive an output from the fourth comparator, wherein an output from the one-shot pulse circuit is sent to the logical operation circuit, the fourth reference voltage is higher than a third voltage determined in advance and lower than a fourth voltage determined in advance, the third voltage is an absolute value of a voltage corresponding to the amount of the gate charge flowing out until a gate voltage of the power semiconductor element reaches a prescribed value when the power semiconductor element is turned off, and the fourth voltage is an absolute value of a voltage corresponding to the amount of the gate charge flowing out until the power semiconductor element is in a blocking state. ### Claim 10 (depends on 6) The drive circuit for a power semiconductor element according to claim 6, further comprising an interterminal voltage detector to detect an interterminal voltage between the first main electrode and the second main electrode in the power semiconductor element, and output an unusual state detection signal having a value showing the interterminal voltage, wherein the unusual state detection unit includes a fifth comparator to compare the error state detection signal with a fifth reference voltage, and based on a comparison result of the fifth comparator, the unusual state detection unit detects whether the power semiconductor element is in a short-circuit state or not. ### Claim 11 (depends on 6) The drive circuit for a power semiconductor element according to claim 6, further comprising: a gate current detection unit to detect a gate current flowing out of the control terminal of the power semiconductor element; an integrator to integrate an output signal from the gate current detection unit, and output an unusual state detection signal having a value showing an amount of a gate charge flowing out of the control terminal of the power semiconductor element, wherein the unusual state detection unit includes a sixth comparator to compare the unusual state detection signal with a sixth reference voltage, and based on a comparison result of the sixth comparator, the unusual state detection unit detects whether the power semiconductor element is in a short-circuit state or not. ### Claim 12 (depends on 6) The drive circuit for a power semiconductor element according to claim 6, further comprising a current detection unit to detect a magnitude of a current flowing between main electrodes of the power semiconductor element, and output an unusual state detection signal having a value showing the magnitude of the current, wherein the unusual state detection unit includes a seventh comparator to compare the unusual state detection signal with a seventh reference voltage, and based on a comparison result of the seventh comparator, the unusual state detection unit detects whether the power semiconductor element is in an overcurrent state or not. ### Claim 13 (depends on 6) The drive circuit for a power semiconductor element according to claim 6, further comprising a temperature detection unit to detect a temperature of the power semiconductor element, and output an unusual state detection signal having a value showing the temperature, wherein the unusual state detection unit includes an eighth comparator to compare the unusual state detection signal with an eighth reference voltage, and based on a comparison result of the eighth comparator, the unusual state detection unit detects whether the power semiconductor element is in an overheated state or not. ### Claim 14 (depends on 1) A power semiconductor module comprising: a power semiconductor element; and the drive circuit for a power semiconductor element according to claim 1, wherein the drive circuit serves to drive the power semiconductor element. ### Claim 15 (depends on 4) The drive circuit for a power semiconductor element according to claim 4, wherein the second switching-off circuit includes an operating time period setting unit to set a time period during which the second switching-off circuit operates, an unusual state detection unit to detect an unusual state of the power semiconductor element, and a logical operation circuit to perform a logical operation of an output of the operating time period setting unit and an output of the unusual state detection unit, and an output of the logical operation circuit is connected to a control terminal of the second turning-off switch. ### Claim 16 (depends on 5) The drive circuit for a power semiconductor element according to claim 5, wherein the second switching-off circuit includes an operating time period setting unit to set a time period during which the second switching-off circuit operates, an unusual state detection unit to detect an unusual state of the power semiconductor element, and a logical operation circuit to perform a logical operation of an output of the operating time period setting unit and an output of the unusual state detection unit, and an output of the logical operation circuit is connected to a control terminal of the second turning-off switch.