# US 2022/0045283 A1 · Composition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0045283 A1 - Document ID: US20220045283A1 - Status: Published application - Kind: A1 - Application number: 17/503,449 - Filed: 2021-10-18 - Published: 2022-02-10 - Earliest claimed: 2019-04-24 - Assignees: FUJIFILM Corporation; The University of Tokyo - Applicants: FUJIFILM Corporation; The University of Tokyo - Inventors: Koki NAKAMURA; Hiroki SUGIURA; Yukio TANI; Tetsuya MATSUSHITA; Tetsuya WATANABE; Junichi TAKEYA; Toshihiro OKAMOTO - Web page: https://patentgrep.com/patent/US20220045283A1 ## CPC - H10K 85/6572: {comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole} - C07D 471/22: in which the condensed systems contains four or more hetero rings - C09D 5/24: Electrically-conducting paints {(conductive materials H01B1/00)} - C09D 7/20: Diluents or solvents - H01B 1/121: {Charge-transfer complexes} - H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} - H10K 85/621: {Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide} - H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate} - H10K 10/484: {characterised by the channel regions} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - C07D: HETEROCYCLIC COMPOUNDS (macromolecular compounds C08) - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An object of the present invention is to provide a composition capable of manufacturing an organic thin film transistor having excellent carrier mobility even under low temperature conditions. The composition of the present invention contains a compound represented by Formula (1) and an alcohol represented by Formula (S1). ## Claims ### Claim 1 A composition comprising: a compound represented by Formula (1); and an alcohol represented by Formula (S1), in Formula (1), A11 and A12 each independently represent —O—, —N(RN)—, or —P(RN)—, B11 to B18 each independently represent —N═ or —C(RM)═, RN and RM each independently represent a hydrogen atom or a substituent, and X11 to X14 each independently represent an oxygen atom or a sulfur atom, in Formula (S1), RS1 to RS6 each independently represent a hydrogen atom, a fluorine atom, or a substituent, RS7 represents a hydrogen atom or a substituent, and at least four of RS1 to RS6 are fluorine atoms. ### Claim 2 (depends on 1) The composition according to claim 1, wherein at least one of B11, B12, B13, B14, B15, B16, B17, or B18 is —N═. ### Claim 3 (depends on 1) The composition according to claim 1, further comprising: an organic solvent other than the alcohol represented by Formula (S1). ### Claim 4 (depends on 3) The composition according to claim 3, wherein the organic solvent consists of only one or more atoms selected from the group consisting of a carbon atom, a hydrogen atom, and a halogen atom. ### Claim 5 (depends on 3) The composition according to claim 3, wherein, in the composition, a content of the alcohol represented by Formula (S1) is 10% by volume or more with respect to a total content of the alcohol represented by Formula (S1) and the organic solvent. ### Claim 6 (depends on 1) The composition according to claim 1, wherein the alcohol represented by Formula (S1) in the composition is an alcohol represented by Formula (S2), in Formula (S2), RS1 to RS3 each independently represent a hydrogen atom, a fluorine atom, or a substituent, RS7 represents a hydrogen atom or a substituent, and at least one of RS1, RS2, or RS3 is a fluorine atom. ### Claim 7 (depends on 1) The composition according to claim 1, wherein the alcohol represented by Formula (S1) in the composition is an alcohol represented by Formula (S3), in Formula (S3), RS7 represents a hydrogen atom or a substituent. ### Claim 8 (depends on 1) The composition according to claim 1, wherein the composition is a composition for forming an organic semiconductor layer. ### Claim 9 (depends on 1) The composition according to claim 1, wherein the composition is a composition for forming an organic semiconductor layer for an organic thin film transistor. ### Claim 10 (depends on 2) The composition according to claim 2, further comprising: an organic solvent other than the alcohol represented by Formula (S1). ### Claim 11 (depends on 10) The composition according to claim 10, wherein the organic solvent consists of only one or more atoms selected from the group consisting of a carbon atom, a hydrogen atom, and a halogen atom. ### Claim 12 (depends on 10) The composition according to claim 10, wherein, in the composition, a content of the alcohol represented by Formula (S1) is 10% by volume or more with respect to a total content of the alcohol represented by Formula (S1) and the organic solvent. ### Claim 13 (depends on 2) The composition according to claim 2, wherein the alcohol represented by Formula (S1) in the composition is an alcohol represented by Formula (S2), in Formula (S2), RS1 to RS3 each independently represent a hydrogen atom, a fluorine atom, or a substituent, RS7 represents a hydrogen atom or a substituent, and at least one of RS1, RS2, or RS3 is a fluorine atom. ### Claim 14 (depends on 2) The composition according to claim 2, wherein the alcohol represented by Formula (S1) in the composition is an alcohol represented by Formula (S3), in Formula (S3), RS7 represents a hydrogen atom or a substituent. ### Claim 15 (depends on 2) The composition according to claim 2, wherein the composition is a composition for forming an organic semiconductor layer. ### Claim 16 (depends on 2) The composition according to claim 2, wherein the composition is a composition for forming an organic semiconductor layer for an organic thin film transistor. ### Claim 17 (depends on 3) The composition according to claim 3, wherein the alcohol represented by Formula (S1) in the composition is an alcohol represented by Formula (S2), in Formula (S2), RS1 to RS3 each independently represent a hydrogen atom, a fluorine atom, or a substituent, RS7 represents a hydrogen atom or a substituent, and at least one of RS1, RS2, or RS3 is a fluorine atom. ### Claim 18 (depends on 3) The composition according to claim 3, wherein the alcohol represented by Formula (S1) in the composition is an alcohol represented by Formula (S3), in Formula (S3), RS7 represents a hydrogen atom or a substituent. ### Claim 19 (depends on 3) The composition according to claim 3, wherein the composition is a composition for forming an organic semiconductor layer. ### Claim 20 (depends on 3) The composition according to claim 3, wherein the composition is a composition for forming an organic semiconductor layer for an organic thin film transistor.