# US 2022/0045241 A1 · Display device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0045241 A1 - Document ID: US20220045241A1 - Status: Published application - Kind: A1 - Application number: 17/383,315 - Filed: 2021-07-22 - Published: 2022-02-10 - Earliest claimed: 2020-08-06 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., Ltd. - Inventors: Hee Na KIM; Cha Dong KIM; In Kyung YOO; Sang Jin LEE; Chong Sup CHANG - Web page: https://patentgrep.com/patent/US20220045241A1 ## CPC - H10H 20/831: characterised by their shape - H10H 20/01: Manufacture or treatment - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10W 90/00: Package configurations - H10H 20/032: {of electrodes} - H10H 20/0364: {of interconnections} - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A display device includes: a first alignment electrode and a second alignment electrode on a substrate, the first and second alignment electrodes extending in a first direction and being spaced apart from each other; an amorphous silicon layer on the first alignment electrode and the second alignment electrode, the amorphous silicon layer having an insulating portion covering the first alignment electrode and an electrode portion covering the second alignment electrode, the electrode portion of the amorphous silicon layer including an N-type dopant; a light emitting element on the amorphous silicon layer, one end of the light emitting element being on the insulating portion and another end of the light emitting element contacting the electrode portion of the amorphous silicon layer; a first insulating layer on the light emitting element and extending in the first direction; and a first electrode contacting the one end of the light emitting element. ## Claims ### Claim 1 A display device comprising: a first alignment electrode and a second alignment electrode on a substrate, the first and second alignment electrodes extending in a first direction and being spaced apart from each other; an amorphous silicon layer on the first alignment electrode and the second alignment electrode, the amorphous silicon layer having an insulating portion covering the first alignment electrode and an electrode portion covering the second alignment electrode, the electrode portion of the amorphous silicon layer comprising an N-type dopant; a light emitting element on the amorphous silicon layer, one end of the light emitting element being on the insulating portion and another end of the light emitting element contacting the electrode portion of the amorphous silicon layer; a first insulating layer on the light emitting element and extending in the first direction; and a first electrode contacting the one end of the light emitting element. ### Claim 2 (depends on 1) The display device of claim 1, wherein the N-type dopant comprises at least one selected from among phosphorus (P), arsenic (As), and antimony (Sb). ### Claim 3 (depends on 2) The display device of claim 2, wherein a concentration of the N-type dopant ranges from 1015/cm3 to 1020/cm3. ### Claim 4 (depends on 1) The display device of claim 1, wherein the insulating portion of the amorphous silicon layer overlaps the first electrode and the light emitting element, and the electrode portion of the amorphous silicon layer does not overlap the first electrode and the light emitting element. ### Claim 5 (depends on 1) The display device of claim 1, wherein the electrode portion of the amorphous silicon layer overlapping the second alignment electrode has an electrode contact portion having a thickness larger than that of the insulating portion of the amorphous silicon layer. ### Claim 6 (depends on 5) The display device of claim 5, wherein the electrode contact portion of the amorphous silicon layer contacts a side of the one end of the light emitting element, and wherein a top surface of the electrode contact portion and a top surface of the light emitting element coincide with each other in a horizontal direction. ### Claim 7 (depends on 1) The display device of claim 1, further comprising a second insulating layer covering the first electrode, the first insulating layer, the light emitting element, and the electrode portion of the amorphous silicon layer. ### Claim 8 (depends on 1) The display device of claim 1, wherein the insulating portion of the amorphous silicon layer has an opening exposing the first alignment electrode, a bottom surface of the first electrode contacts a top surface of the first alignment electrode through the opening, and a bottom surface of the electrode portion contacts a top surface of the second alignment electrode. ### Claim 9 A method for manufacturing a display device, the method comprising: preparing a target substrate comprising a first alignment electrode and a second alignment electrode; forming an amorphous silicon layer on the target substrate; aligning a light emitting element on the amorphous silicon layer; forming a first insulating layer on the light emitting element; forming a first electrode on one end of the light emitting element and the amorphous silicon layer; and forming an insulating portion of the amorphous silicon layer and an electrode portion of the amorphous silicon layer by doping an N-type dopant into a portion of the amorphous silicon layer, wherein another end of the light emitting element contacts the electrode portion of the amorphous silicon layer. ### Claim 10 (depends on 9) The method of claim 9, wherein the electrode portion of the amorphous silicon layer is doped with the N-type dopant, and wherein the first electrode and the light emitting element mask the insulating portion of the amorphous silicon layer such that is not doped with the N-type dopant. ### Claim 11 (depends on 9) The method of claim 9, wherein the N-type dopant comprises at least one selected from among phosphorus (P), arsenic (As), and antimony (Sb). ### Claim 12 (depends on 9) The method of claim 9, wherein the electrode portion is doped with the N-type dopant at a concentration ranging from 1015/cm3 to 1020/cm3. ### Claim 13 (depends on 9) The method of claim 9, wherein the amorphous silicon layer is formed using a halftone mask such that the amorphous silicon layer has an electrode contact portion, the electrode contact portion being a portion of the electrode portion having a thickness larger than that of the insulating portion. ### Claim 14 A display device comprising: a first alignment electrode and a second alignment electrode on a substrate, the first and second alignment electrodes extending in a first direction and being spaced apart from each other; a first insulating layer on the first alignment electrode and the second alignment electrode; a light emitting element on the first insulating layer, one end of the light emitting element being on the first alignment electrode, another end of the light emitting element being on the second alignment electrode; and a first electrode and a second electrode on the first insulating layer to be spaced apart from each other, the first electrode overlapping the first alignment electrode to contact the one end of the light emitting element, the second electrode overlapping the second alignment electrode to contact the other end of the light emitting element, wherein the first electrode and the second electrode comprise amorphous silicon, and wherein the first electrode comprises a P-type dopant, and the second electrode comprises an N-type dopant. ### Claim 15 (depends on 14) The display device of claim 14, wherein the first electrode and the second electrode extend in the first direction and are spaced apart from each other at a region overlapping the light emitting element. ### Claim 16 (depends on 14) The display device of claim 14, wherein the P-type dopant comprises any one selected from among boron (B), aluminum (Al), gallium (Ga), and indium (In). ### Claim 17 (depends on 14) The display device of claim 14, wherein a concentration of the N-type dopant ranges from 1015/cm3 to 1020/cm3. ### Claim 18 A method for manufacturing a display device, the method comprising: preparing a target substrate comprising a first alignment electrode and a second alignment electrode; forming a first insulating layer on the target substrate; aligning a light emitting element on the first insulating layer; forming an amorphous silicon layer covering the light emitting element on the target substrate; forming a first mask pattern overlapping the second alignment electrode and doping the first mask pattern with a P-type dopant; removing the first mask pattern; forming a second mask pattern overlapping the first alignment electrode and doping the second mask pattern with an N-type dopant; and removing a portion of the amorphous silicon layer overlapping the light emitting element to form a first electrode contacting one end of the light emitting element and a second electrode contacting another end of the light emitting element. ### Claim 19 (depends on 18) The method of claim 18, wherein the first electrode is doped with a P-type dopant, and the P-type dopant is doped at a concentration ranging from 1015/cm3 to 1020/cm3. ### Claim 20 (depends on 18) The method of claim 18, wherein the second electrode is doped with an N-type dopant, and the N-type dopant is doped at a concentration ranging from 1015/cm3 to 1020/cm3.