# US 2022/0045240 A1 · Epitaxial formation support structures and associated methods

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- Number: US 2022/0045240 A1
- Document ID: US20220045240A1
- Status: Published application
- Kind: A1
- Application number: 17/510,060
- Filed: 2021-10-25
- Published: 2022-02-10
- Earliest claimed: 2009-12-07
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Calvin Wade Sheen
- Web page: https://patentgrep.com/patent/US20220045240A1

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- B28B 1/16: for producing layered articles (coating B28B11/04)
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/018: {Bonding of wafers}
- H10H 20/85: Packages
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B28B: SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER (foundry moulding B22C; working stone or stone-like material B28D; shaping of substances in a plastic state, in general B29C; making layered products not composed wholly of these substances B32B)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat.

## Claims

### Claim 1

A solid state lighting (SSL) device, comprising:
a formation structure comprising silicon with a (1,1,1) crystal orientation that is doped with an exfoliation agent; and
an SSL structure directly on the formation structure, wherein the SSL structure includes at least a III-nitride semiconductor material epitaxially grown on the formation structure.

### Claim 2 (depends on 1)

The SSL device of claim 1, wherein the exfoliation agent comprises hydrogen, boron, helium, or a combination thereof.

### Claim 3 (depends on 1)

The SSL device of claim 1, further comprising a diffusion barrier on a lower surface of the formation structure opposite the SSL structure.

### Claim 4 (depends on 3)

The SSL device of claim 3, wherein the diffusion barrier comprises Si3N4.

### Claim 5 (depends on 1)

The SSL device of claim 1, wherein the formation structure is between 10 nanometers and 2 micrometers thick.

### Claim 6 (depends on 1)

The SSL device of claim 1, wherein the III-nitride semiconductor material comprises P-type GaN.

### Claim 7 (depends on 1)

The SSL device of claim 1, wherein the III-nitride semiconductor material comprises N-type GaN.

### Claim 8 (depends on 1)

The SSL device of claim 1, wherein the SSL structure further comprises an additional III-nitride semiconductor material and an active region between the III-nitride semiconductor material and the additional III-nitride semiconductor material.

### Claim 9 (depends on 8)

The SSL device of claim 8 wherein the active region comprises a single quantum well, multiple quantum wells, a bulk semiconductor material, or a combination thereof

### Claim 10 (depends on 8)

The SSL device of claim 8, wherein the active region comprises gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium indium phosphide (AlGaInP), aluminum gallium indium nitride (AlGaInN), or a combination thereof.

### Claim 11

A solid state lighting (SSL) device, comprising:
a formation structure that is doped with hydrogen, boron, helium, or a combination thereof;
an SSL structure directly on the formation structure, wherein the SSL structure includes at least a III-nitride semiconductor material epitaxially grown on the formation structure; and
a Si3N4 diffusional barrier on a lower surface of the formation structure opposite the SSL structure,
wherein the formation structure comprises Si(1,1,1) Si(1,0,0), AlGaN, GaN, SiC, Al2O3, ZnO2, or (GaAs).

### Claim 12 (depends on 11)

The SSL device of claim 11, wherein the formation structure is between 10 nanometers and 2 micrometers thick.

### Claim 13 (depends on 11)

The SSL device of claim 11, wherein the III-nitride semiconductor material comprises P-type GaN.

### Claim 14 (depends on 11)

The SSL device of claim 11, wherein the III-nitride semiconductor material comprises N-type GaN.

### Claim 15 (depends on 11)

The SSL device of claim 11, wherein the SSL structure further comprises an additional III-nitride semiconductor material and an active region between the III-nitride semiconductor material and the additional III-nitride semiconductor material.

### Claim 16 (depends on 15)

The SSL device of claim 15 wherein the active region comprises a single quantum well, multiple quantum wells, a bulk semiconductor material, or a combination thereof.

### Claim 17 (depends on 15)

The SSL device of claim 15, wherein the active region comprises gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium indium phosphide (AlGaInP), aluminum gallium indium nitride (AlGaInN), or a combination thereof.