# US 2022/0045239 A1 · Group iii nitride semiconductor light emitting element and method of manufacturing the same

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- Number: US 2022/0045239 A1
- Document ID: US20220045239A1
- Status: Published application
- Kind: A1
- Application number: 17/312,934
- Filed: 2019-12-11
- Published: 2022-02-10
- Earliest claimed: 2018-12-14
- Assignees: Dowa Electronics Materials Co., Ltd.
- Applicants: DOWA Electronics Materials Co., Ltd.
- Inventors: Yasuhiro WATANABE
- Web page: https://patentgrep.com/patent/US20220045239A1

## CPC

- H10H 20/8162: {Current-blocking structures}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/832: characterised by their material
- H10H 20/835: {Reflective materials}
- H10H 20/032: {of electrodes}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller.

## Claims

### Claim 1

A group III nitride semiconductor light emitting element, comprising:
a substrate;
an n-type semiconductor layer on the substrate;
a light emitting layer on the n-type semiconductor layer;
a p-type AlGaN electron blocking layer on the light emitting layer;
a p-type contact layer on the p-type AlGaN electron blocking layer; and
a p-side reflection electrode on the p-type contact layer; wherein:
a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller;
an Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller;
a film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller; and
the p-type contact layer has a p-type AlGaN contact layer having an Al composition ratio of 0.03 or greater and 0.25 or smaller.

### Claim 2 (depends on 1)

The group III nitride semiconductor light emitting element according to claim 1, wherein the p-type contact layer is made only of the p-type AlGaN contact layer.

### Claim 3 (depends on 1)

The group III nitride semiconductor light emitting element according to claim 1, wherein the p-type contact layer has a p-type GaN contact layer between the p-type AlGaN contact layer and the p-side reflection electrode.

### Claim 4 (depends on 1)

The group III nitride semiconductor light emitting element according to claim 1, wherein a film thickness of the p-type AlGaN contact layer is 10 nm or greater and 25 nm or smaller.

### Claim 5

A method of manufacturing a group III nitride semiconductor light emitting element, comprising:
a step of forming an n-type semiconductor layer on a substrate;
a step of forming a light emitting layer on the n-type semiconductor layer;
a step of forming a p-type AlGaN electron blocking layer on the light emitting layer;
a step of forming a p-type contact layer on the p-type AlGaN electron blocking layer; and
a step of forming a p-side reflection electrode on the p-type contact layer,
wherein:
a center emission wavelength from the light emitting layer is 250 nm or greater and 330 nm or smaller;
an Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller;
a film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller; and
the p-type contact layer has a p-type AlGaN contact layer having an Al composition ratio of 0.03 or greater and 0.25 or smaller.