# US 2022/0045238 A1 · Light emitting device and wafer

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- Number: US 2022/0045238 A1
- Document ID: US20220045238A1
- Status: Published application
- Kind: A1
- Application number: 17/354,671
- Filed: 2021-06-22
- Published: 2022-02-10
- Earliest claimed: 2020-08-06
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: KooHwa LEE; WooNam JEONG; HyeonHo SON
- Web page: https://patentgrep.com/patent/US20220045238A1

## CPC

- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10W 90/00: Package configurations
- H10H 20/833: Transparent materials
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a light emitting device. A light emitting device includes a first n-type semiconductor layer, a first light emitting layer disposed on the first n-type semiconductor layer, a first p-type semiconductor layer disposed on the first light emitting layer, a second p-type semiconductor layer disposed on the first p-type semiconductor layer, a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer, a second light emitting layer disposed on the second p-type semiconductor layer, a second n-type semiconductor layer disposed on the second light emitting layer, a p-type electrode disposed on the second p-type semiconductor layer, a first n-type electrode disposed on the first n-type semiconductor layer, and a second n-type electrode disposed on the second n-type semiconductor layer.

## Claims

### Claim 1

A light emitting device, comprising:
a first n-type semiconductor layer;
a first light emitting layer disposed on the first n-type semiconductor layer;
a first p-type semiconductor layer disposed on the first light emitting layer;
a second p-type semiconductor layer disposed on the first p-type semiconductor layer;
a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer;
a second light emitting layer disposed on the second p-type semiconductor layer;
a second n-type semiconductor layer disposed on the second light emitting layer;
a p-type electrode disposed on the second p-type semiconductor layer;
a first n-type electrode disposed on the first n-type semiconductor layer; and
a second n-type electrode disposed on the second n-type semiconductor layer.

### Claim 2 (depends on 1)

The light emitting device according to claim 1,
wherein a partial portion of the first n-type semiconductor layer protrudes outward beyond the first light emitting layer, the first p-type semiconductor layer, the second p-type semiconductor layer, the second light emitting layer, and the second n-type semiconductor layer, and
the first n-type electrode is disposed on the partial portion of the first n-type semiconductor layer protruding outward beyond the first light emitting layer and the second light emitting layer.

### Claim 3 (depends on 2)

The light emitting device according to claim 2,
wherein an entire portion of the second p-type semiconductor layer overlaps the first light emitting layer,
a partial portion of the second p-type semiconductor layer protrudes outward beyond the second light emitting layer and the second n-type semiconductor layer, and
the p-type electrode is disposed on the partial portion of the second p-type semiconductor layer protruding outward beyond the second light emitting layer.

### Claim 4 (depends on 1)

The light emitting device according to claim 1,
wherein the first n-type electrode has a larger thickness than the second n-type electrode.

### Claim 5 (depends on 4)

The light emitting device according to claim 4,
wherein the first n-type electrode is formed of an opaque conductive material, and
the second n-type electrode is formed of a transparent conductive material.

### Claim 6 (depends on 1)

The light emitting device according to claim 1,
wherein the bonding layer is formed of a conductive material having a high transmittance, and
the p-type electrode is electrically connected to the first p-type semiconductor layer through the second p-type semiconductor layer and the bonding layer.

### Claim 7 (depends on 1)

The light emitting device according to claim 1,
wherein the bonding layer is formed of a non-conductive material having a high transmittance, and
a partial portion of the p-type electrode penetrates through the second p-type semiconductor layer and the bonding layer to contact the first p-type semiconductor layer.

### Claim 8 (depends on 1)

The light emitting device according to claim 1,
wherein the first light emitting layer is a green light emitting layer or a blue light emitting layer, and
the second light emitting layer is a red light emitting layer.

### Claim 9

A wafer, comprising:
a substrate; and
a plurality of light emitting devices disposed on the substrate,
wherein each of the plurality of light emitting devices includes:
a first n-type semiconductor layer disposed on the substrate;
a first light emitting layer disposed on the first n-type semiconductor layer;
a p-type semiconductor layer disposed on the first light emitting layer;
a second light emitting layer disposed on the p-type semiconductor layer;
a second n-type semiconductor layer disposed on the second light emitting layer;
a p-type electrode disposed on the p-type semiconductor layer;
a first n-type electrode disposed on the first n-type semiconductor layer; and
a second n-type electrode disposed on the second n-type semiconductor layer.

### Claim 10 (depends on 9)

The wafer according to claim 9, wherein the p-type semiconductor layer includes:
a first p-type semiconductor layer disposed on the first light emitting layer; and
a second p-type semiconductor layer disposed on the first p-type semiconductor layer, and
each of the plurality of light emitting devices further includes a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer.

### Claim 11 (depends on 10)

The wafer according to claim 10,
wherein an entire portion of the second p-type semiconductor layer, an entire portion of the first p-type semiconductor layer, and an entire portion of the first light emitting layer overlap the first n-type semiconductor layer, and
an entire portion of the second n-type semiconductor layer and an entire portion of the second light emitting layer overlap the second p-type semiconductor layer.

### Claim 12 (depends on 11)

The wafer according to claim 11,
wherein the first n-type electrode is disposed on a partial portion of the first n-type semiconductor layer that does not overlap the first light emitting layer,
the p-type electrode is disposed on a partial portion of the second p-type semiconductor layer that does not overlap the second light emitting layer, and
the second n-type electrode is disposed between the first n-type electrode and the p-type electrode on a plane.

### Claim 13 (depends on 12)

The wafer according to claim 12,
wherein the first n-type electrode has a larger thickness than the second n-type electrode and the p-type electrode.

### Claim 14 (depends on 9)

The wafer according to claim 9,
wherein when a voltage is applied to the first n-type electrode and the p-type electrode, the first light emitting layer emits light,
when a voltage is applied to the second n-type electrode and the p-type electrode, the second light emitting layer emits light, and
when a voltage is applied to the first n-type electrode, the second n-type electrode, and the p-type electrode, the first light emitting layer and the second light emitting layer emit light.

### Claim 15 (depends on 9)

The wafer according to claim 9,
wherein the plurality of light emitting devices includes:
a first light emitting device including a first green light emitting layer emitting green light as the first light emitting layer; and
a second light emitting device including a first blue light emitting layer emitting blue light as the first light emitting layer,
the first light emitting device emits the green light from the first green light emitting layer and red light from the second light emitting layer, and
the second light emitting device emits the blue light from the first blue light emitting layer and the red light from the second light emitting layer.

### Claim 16 (depends on 15)

The wafer according to claim 15,
wherein the first light emitting device and the second light emitting device are alternately disposed in the same row or in the same column.