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US 2022/0045230 A1Published application
Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
AssigneeArray Photonics, Inc.
InventorsFerran SUAREZ, Ding DING, Aymeric MAROS
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Abstract
Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.
Claims20
A compound semiconductor optoelectronic structure comprising:
- a substrate having a substrate surface;
- a first doped region overlying the substrate surface;
- a dilute nitride active region overlying the first doped region, wherein the dilute nitride active region comprises either:
- a single layer active region comprising a first portion and a second portion, wherein the first portion has a higher bandgap than the second portion, or
- a multiple layer active region comprising a first layer and a second layer, wherein the first layer has a higher bandgap than the second layer;
- and
- a second doped region overlying the dilute nitride active region.
4 more elements
Dependencies are inferred from the claim text.