# US 2022/0045127 A1 · Selector devices

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- Number: US 2022/0045127 A1
- Document ID: US20220045127A1
- Status: Published application
- Kind: A1
- Application number: 17/506,716
- Filed: 2021-10-21
- Published: 2022-02-10
- Earliest claimed: 2020-01-29
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Abhishek A. Sharma; Ravi Pillarisetty; Van H. Le; Gilbert W. Dewey; Willy Rachmady
- Web page: https://patentgrep.com/patent/US20220045127A1

## CPC

- G11C 13/0011: {comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]}
- H10B 63/20: {comprising selection components having two electrodes, e.g. diodes}
- H10B 61/10: {comprising components having two electrodes, e.g. diodes or MIM elements}
- H10B 63/80: {Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays}
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- H10N 70/021: {Formation of switching materials, e.g. deposition of layers}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/841: {Electrodes}
- H10N 70/882: {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides}
- H10N 70/883: {Oxides or nitrides}
- G11C 2213/76: Array using an access device for each cell which being not a transistor and not a diode
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Disclosed herein are selector devices and related devices and techniques. In some embodiments, a selector device may include a first electrode, a second electrode, and a selector material between the first electrode and the second electrode. The selector material may include a dielectric material and a conductive dopant.

## Claims

### Claim 1

A selector device, comprising:
a first electrode;
a second electrode; and
a selector material between the first electrode and the second electrode, wherein the selector material comprises a dielectric material and a conductive dopant, wherein the dielectric material comprises a chalcogenide.

### Claim 2 (depends on 1)

The selector device of claim 1, wherein the chalcogenide comprises at least one of silicon and tellurium.

### Claim 3 (depends on 2)

The selector device of claim 2, wherein the chalcogenide comprises germanium.

### Claim 4 (depends on 1)

The selector device of claim 1, wherein the chalcogenide comprises a group IV or group VI element.

### Claim 5 (depends on 1)

The selector device of claim 1, wherein the conductive dopant includes platinum, silver, gold, tantalum, copper, cobalt, tungsten, ruthenium, palladium, or carbon.

### Claim 6 (depends on 1)

The selector device of claim 1, wherein the conductive dopant has a work function less than 4.5 electron volts.

### Claim 7 (depends on 1)

The selector device of claim 1, wherein the conductive dopant has a first ion migration velocity, the dielectric material has a second ion migration velocity, and the second ion migration velocity is greater than the first ion migration velocity by a factor of at least 10.

### Claim 8 (depends on 1)

The selector device of claim 1, wherein the selector device has a threshold voltage between 0.4 volts and 2.5 volts, and the selector device has a holding voltage between 0.1 volts and 2.5 volts.

### Claim 9 (depends on 1)

The selector device of claim 1, further comprising a getter layer between the first electrode and the selector material.

### Claim 10

A memory cell, comprising:
a storage element; and
a selector device coupled to the storage element, wherein the selector device comprises a selector material, the selector material comprises a dielectric material and a conductive dopant, and the dielectric material comprises a chalcogenide.

### Claim 11 (depends on 10)

The memory cell of claim 10, wherein the selector device comprises a first electrode and a second electrode, the selector material is between the first electrode and the second electrode, and the first electrode or the second electrode is also an electrode of the storage element.

### Claim 12 (depends on 10)

The memory cell of claim 10, wherein the selector device comprises a first electrode and a second electrode, the selector material is between the first electrode and the second electrode, and the selector device further comprises a getter layer between the first electrode and the selector material.

### Claim 13 (depends on 12)

The memory cell of claim 12, wherein the getter layer comprises at least one of tantalum, titanium, and chromium.

### Claim 14 (depends on 10)

The memory cell of claim 10, wherein the storage element is a resistive random access memory (RRAM) device, a phase change memory (PCM) device, a metal filament memory device, or a magnetoresistive random access memory (MRAM) device.

### Claim 15 (depends on 10)

The memory cell of claim 10, wherein the chalcogenide comprises at least one of silicon and tellurium.

### Claim 16 (depends on 15)

The memory cell of claim 15, wherein the chalcogenide comprises germanium.

### Claim 17

A computing device, comprising:
a circuit board;
a processing device coupled to the circuit board; and
a memory array coupled to the processing device, wherein the memory array comprises a memory cell having a storage element coupled in series with a selector device, the selector device comprises a selector material, the selector material comprises a dielectric material and a conductive dopant, and the dielectric material comprises a chalcogenide.

### Claim 18 (depends on 17)

The computing device of claim 17, further comprising a wireless communications device coupled to the circuit board.

### Claim 19 (depends on 17)

The computing device of claim 17, wherein the storage element includes a resistive switch.

### Claim 20 (depends on 17)

The computing device of claim 17, wherein the chalcogenide comprises at least one of silicon, tellurium, and germanium.