# US 2022/0045121 A1 · Monolithic multi-chip-collective light-emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0045121 A1 - Document ID: US20220045121A1 - Status: Published application - Kind: A1 - Application number: 16/984,564 - Filed: 2020-08-04 - Published: 2022-02-10 - Earliest claimed: 2020-08-04 - Assignees: Bolb Inc. - Applicants: Bolb Inc. - Inventors: Jianping Zhang; Ling Zhou; Alexander Lunev; Ying Gao - Web page: https://patentgrep.com/patent/US20220045121A1 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/835: {Reflective materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A monolithic multi-chip-collective light emitting diode includes: an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact; an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region. ## Claims ### Claim 1 A monolithic multi-chip-collective light emitting diode comprising: an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact; an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region. ### Claim 2 (depends on 1) The monolithic multi-chip-collective light emitting diode of claim 1, wherein a surface of the n-bridge metal facing the p-type structure is light reflective. ### Claim 3 (depends on 1) The monolithic multi-chip-collective light emitting diode of claim 1, wherein the n-bridge metal comprises a light reflective layer facing the p-type structure, a diffusion blockage layer formed on the light reflective layer, a current conduction layer formed on the diffusion blockage layer, and an outer layer formed on the current conduction layer for adhesion to a dielectric layer. ### Claim 4 (depends on 3) The monolithic multi-chip-collective light emitting diode of claim 3, wherein the light reflective layer is made of aluminum or aluminum magnesium alloy and has a thickness equal to or greater than 10 nm. ### Claim 5 (depends on 3) The monolithic multi-chip-collective light emitting diode of claim 3, wherein the diffusion blockage layer is made of nickel and has a thickness in the range of 2-10 nm. ### Claim 6 (depends on 3) The monolithic multi-chip-collective light emitting diode of claim 3, wherein the outer layer is made of chromium, or palladium, or their alloy and has a thickness in the range of 1-10 nm. ### Claim 7 (depends on 1) The monolithic multi-chip-collective light emitting diode of claim 1, further comprising a first dielectric layer formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region, and the n-bridge metal is formed on the first dielectric layer. ### Claim 8 (depends on 7) The monolithic multi-chip-collective light emitting diode of claim 7, further comprising a second dielectric layer and mini p-bonding pads of the mini chips, wherein the second dielectric layer is formed on the n-bridge metal, the mini p-ohmic contacts and the first dielectric layer, and the mini p-bonding pads contact the mini p-ohmic contacts through openings in the second dielectric layer, respectively. ### Claim 9 (depends on 8) The monolithic multi-chip-collective light emitting diode of claim 8, wherein each of the mini chips comprises a plurality of monolithically integrated micro chips, each micro chip has a micro n-contact, a micro p-ohmic contact defining a micro light emitting area, a micro p-bonding pad connecting to the micro p-ohmic contact via a micro opening in the second dielectric layer; wherein each of the mini chips contains a mini n-contact pad and a mini n-bridge metal, which forms a metal interconnection network connecting the mini re-contact pad to all micro n-contacts, the mini n-contact pad receives current from the n-bridge metal and distributes current via the mini n-bridge metal to all micro n-contacts. ### Claim 10 (depends on 1) The monolithic multi-chip-collective light emitting diode of claim 1, wherein the mini chips have the same size with a square or rectangular shape when viewed from top, the mini n-contact is formed at a corner of each of the mini chips, respectively, and corners of neighboring mini chips occupied by the mini n-contact are not adjacent to each other. ### Claim 11 (depends on 1) The monolithic multi-chip-collective light emitting diode of claim 1, wherein the mini chips have the same size with a square or rectangular shape when viewed from top, every four neighboring mini chips have their respective mini n-contacts clustered and merged into a single mini n-contact at adjacent corners thereof. ### Claim 12 (depends on 11) The monolithic multi-chip-collective light emitting diode of claim 11, further comprising a plurality of medium mini chips, each of the medium mini chips being formed by joining the mini p-ohmic contacts of two or more neighboring mini chips, wherein neighboring medium mini chips are partially covered by the n-bonding pad. ### Claim 13 (depends on 12) The monolithic multi-chip-collective light emitting diode of claim 12, wherein mini p-ohmic contacts of the medium mini chips are electrically connected to the mini p-ohmic contacts of the mini chips. ### Claim 14 (depends on 12) The monolithic multi-chip-collective light emitting diode of claim 12, wherein the monolithic multi-chip-collective light emitting diode has a single large p-bonding pad, connecting to all the mini p-ohmic contacts. ### Claim 15 (depends on 14) The monolithic multi-chip-collective light emitting diode of claim 14, wherein the mini p-ohmic contacts of the mini chips are merged to form a single large p-ohmic contact. ### Claim 16 (depends on 1) The monolithic multi-chip-collective light emitting diode of claim 1, wherein the n-bridge metal forms an omnidirectional reflector (ODR). ### Claim 17 (depends on 1) The monolithic multi-chip-collective light emitting diode of claim 1, wherein the monolithic multi-chip-collective light emitting diode is a high-power UV light emitting diode. ### Claim 18 (depends on 7) The monolithic multi-chip-collective light emitting diode of claim 7, wherein the first dielectric layer is UV transparent. ### Claim 19 (depends on 7) The monolithic multi-chip-collective light emitting diode of claim 7, wherein the first dielectric layer is UV reflective. ### Claim 20 (depends on 19) The monolithic multi-chip-collective light emitting diode of claim 19, wherein the first dielectric layer is a UV distributed Bragg reflector (DBR).