# US 2022/0045102 A1 · Devices with staggered body contacts

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- Number: US 2022/0045102 A1
- Document ID: US20220045102A1
- Status: Published application
- Kind: A1
- Application number: 16/987,170
- Filed: 2020-08-06
- Published: 2022-02-10
- Earliest claimed: 2020-08-06
- Assignees: GlobalFoundries U.S. Inc.
- Applicants: Globalfoundries U.S. Inc.
- Inventors: Anupam DUTTA
- Web page: https://patentgrep.com/patent/US20220045102A1

## CPC

- H10D 30/6711: {by using electrodes contacting the supplementary regions or layers}
- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10D 30/6729: {characterised by the electrodes}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present disclosure relates to semiconductor structures and, more particularly, to devices with staggered body contacts and methods of manufacture. The device includes: a gate structure on a semiconductor substrate material, the gate structure comprising a gate body with a width and a length; a plurality of body contacts electrically contacting a channel region under the gate body on at least one side of the gate body along its width; and isolation structures isolating the plurality of body contacts from a source region and a drain region associated with the gate structure.

## Claims

### Claim 1

A structure comprising:
a gate structure on a semiconductor substrate material, the gate structure comprising a gate body with a width and a length;
a plurality of body contacts electrically contacting a channel region under the gate body on at least one side of the gate body along its width; and
isolation structures isolating the plurality of body contacts from a source region and a drain region associated with the gate structure.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the plurality of body contacts overlap underneath the gate body along its width.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the gate body includes at least one notch or tab portion which extends laterally outward from the at least one side of the gate body along its width, and each of which electrically connects to a respective body contact of the plurality of body contacts.

### Claim 4 (depends on 1)

The structure of claim 1, further comprising a contact ring body which surrounds the gate structure and which electrically contacts to each of the plurality of body contacts.

### Claim 5 (depends on 4)

The structure of claim 4, further comprising contact bridges electrically contacting the channel region under gate body along both of its ends and the contact ring body.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the semiconductor substrate material is semiconductor on insulator (SOI) technology.

### Claim 7 (depends on 6)

The structure of claim 6, wherein the plurality of body contacts are staggered about the gate body along both sides along its width.

### Claim 8 (depends on 7)

The structure of claim 7, wherein the plurality of body contacts are symmetrically placed about the gate body along both sides along its width.

### Claim 9 (depends on 7)

The structure of claim 7, wherein the plurality of body contacts are asymmetrically placed about the gate body along both sides along its width.

### Claim 10 (depends on 6)

The structure of claim 6, wherein the isolation structures, the source region and the drain region extend to an underlying insulator material of the SOI technology, directly underneath the semiconductor substrate material.

### Claim 11 (depends on 6)

The structure of claim 6, wherein the plurality of body contacts are electrically contacting the gate body on a same side of as the source region, and the plurality of body contacts are electrically shorted to the source region.

### Claim 12 (depends on 6)

The structure of claim 6, wherein the plurality of body contacts are electrically contacting the gate body on a same side as the source region and a same side as the drain region, and the body contacts on the same side as the source region are electrically contacting a ring body contact by an wiring structure and the body contacts on the same side as the drain region are directly electrically contacting the ring body contact.

### Claim 13 (depends on 6)

The structure of claim 6, wherein the plurality of body contacts are offset from each other by a minimum distance of 2*body contact (bc) pitch.

### Claim 14 (depends on 6)

The structure of claim 6, wherein the plurality of body contacts are configured to be biased independently.

### Claim 15

A structure comprising:
a semiconductor on insulator substrate;
an insulator layer underlying the semiconductor on insulator substrate;
at least one gate structure on the semiconductor on insulator substrate;
a source region and a drain region on opposing sides of the at least one gate structure, the source region and the drain region extending to the insulator layer;
a plurality of body contacts electrically contacting the at least one gate body on at least one side along its width; and
isolation structures extending to the insulator layer and isolating the plurality of body contacts from the source region and the drain region.

### Claim 16 (depends on 15)

The structure of claim 15, wherein the plurality of body contacts are offset from each other by a minimum distance of 2*body contact (bc) pitch.

### Claim 17 (depends on 15)

The structure of claim 15, wherein the least one gate structure is three or more gate structures with shared source regions, and the plurality of body contacts electrically contacting the gate structures are shared along the shared source regions.

### Claim 18 (depends on 17)

The structure of claim 17, wherein the plurality of body contacts electrically contacting the gate body are also shared along the shared drain regions.

### Claim 19 (depends on 17)

The structure of claim 17, wherein the plurality of body contacts are staggered about the least one gate structure along both sides along its width.

### Claim 20

A structure comprising:
at least one gate structure on a semiconductor substrate material;
an insulator layer directly underneath the semiconductor substrate material;
a source region on a first side of the at least one gate structure;
a drain region on a second side of the at least one gate structure;
a plurality of staggered body contacts which are offset from one another and which are provided along a width of the at least one gate structure on both the first side and the second side, respectively; and
isolation structures extending to the insulator layer and which isolates the staggered body contacts from the source region the drain region and each of the plurality of staggered body contacts.