# US 2022/0045098 A1 · Novel 3d nand memory device and method of forming the same

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- Number: US 2022/0045098 A1
- Document ID: US20220045098A1
- Status: Published application
- Kind: A1
- Application number: 17/451,884
- Filed: 2021-10-22
- Published: 2022-02-10
- Earliest claimed: 2019-08-29
- Assignees: Yangtze Memory Technologies Co., Ltd.
- Applicants: Yangtze Memory Technologies Co., Ltd.
- Inventors: Yingjie OUYANG; Zhiliang XIA; Lei JIN; Qiguang WANG; Wenxi ZHOU; Zhongwang SUN; Rui SU; Yueqiang PU; Jiwei CHENG
- Web page: https://patentgrep.com/patent/US20220045098A1

## CPC

- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10D 64/037: {comprising charge-trapping insulators}
- G11C 5/063: {Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay}
- H10B 43/10: characterised by the top-view layout
- H10B 43/35: with cell select transistors, e.g. NAND
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In a method for forming a semiconductor device, a channel structure is formed that extends from a side of a substrate, where the channel structure includes sidewalls and a bottom region. The channel structure further includes a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact. A high-k layer is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

## Claims

### Claim 1

A method for forming a semiconductor device, comprising:
forming a channel structure that extends from a side of a substrate, the channel structure having sidewalls and a bottom region, the channel structure further including a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact; and
forming a high-k layer over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
forming a plurality of word lines that are positioned over the substrate; and
forming a plurality of insulating layers that are positioned over the substrate, the plurality of word lines and the plurality of insulating layers being alternatingly stacked so that the plurality of word lines are spaced apart from one another by the plurality of the insulating layers.

### Claim 3 (depends on 2)

The method of claim 2, wherein the forming the channel structure comprises:
forming a channel opening that extends through the plurality of word lines and the plurality of insulating layers, and further extends into the substrate, the channel opening having sidewalls and a bottom region to expose the substrate;
forming the bottom channel contact at the bottom region of the channel opening, the bottom channel contact being formed along the sidewalls of the channel opening and further extending into the substrate;
forming a blocking layer along the sidewalls of the channel opening and over the bottom channel contact, the blocking layer having side portions along the sidewalls of the channel opening and a bottom portion covering the bottom channel contact;
forming a charge trapping layer over the blocking layer, the charge trapping layer having side portions along the sidewalls of the channel opening and a bottom portion over the bottom channel contact;
forming a tunneling layer over the charge trapping layer, the tunneling layer having side portions along the sidewalls of the channel opening and a bottom portion over the bottom channel contact;
forming a bottom opening that extends through the bottom portions of the blocking layer, the charge trapping layer, and the tunneling layer to expose the bottom channel contact; and
forming the channel layer over the tunneling layer and through the bottom opening so that the channel layer extends through the bottom portions of the blocking layer, the charge trapping layer, and the tunneling layer and contacts the bottom channel contact.

### Claim 4 (depends on 3)

The method of claim 3, further comprising:
forming the bottom opening that extends through the bottom portions of the blocking layer, the charge trapping layer, and the tunneling layer, and further extends into the bottom channel contact such that the blocking layer, the charge trapping layer, and the tunneling layer are arranged over a first top surface of the bottom channel contact; and
forming the channel layer over the tunneling layer and through the bottom opening, the channel layer extending through the bottom portion of the blocking layer and the charge trapping layer, and further extending into the bottom channel contact such that the channel layer is positioned over a second top surface of the bottom channel contact, the second top surface being positioned below the first top surface of the bottom channel contact.

### Claim 5 (depends on 1)

The method of claim 1, wherein the high-k layer comprises a first material that increases an initial threshold voltage (Uvvt) of the semiconductor device, and a second material that reduces the initial threshold voltage of the semiconductor device.

### Claim 6 (depends on 3)

The method of claim 3, further comparing:
forming a dielectric layer over the channel layer along the sidewalls of the channel opening; and
forming the high-k layer over the dielectric layer so that the dielectric layer is positioned between the high-k layer and the channel layer.

### Claim 7 (depends on 6)

The method of claim 6, wherein side portions of the high-k layer formed along the sidewalls of the channel opening are spaced apart from the channel layer by the dielectric layer, and a bottom portion of the high-k layer over the bottom channel contact is in contact with the channel layer.

### Claim 8 (depends on 5)

The method of claim 5, wherein an increase in a thickness of the high-k layer results in an increase of the initial threshold voltage of the semiconductor device.

### Claim 9 (depends on 5)

The method of claim 5, wherein the first material comprises HfO2 and Al2O3, and the second material comprises La2O3 and Y2O3.

### Claim 10 (depends on 1)

The method of claim 1, further comprising:
forming a channel insulating layer over the high-k layer; and
forming a top channel contact over the channel insulating layer, the top channel contact being further arranged between and in contact with the channel layer.

### Claim 11

A method for forming a semiconductor device, comprising:
forming a channel structure that extends from a side of a substrate, the channel structure having sidewalls and a bottom region, the channel structure further including a bottom channel contact that is positioned at the bottom region, a channel dielectric region that includes side portions along the sidewalls of the channel structure and a bottom portion over a top surface of the bottom channel contact, and a channel layer that is formed along side portions of the channel dielectric region, further extends through the bottom portion of the channel dielectric region, and extends into the bottom channel contact from the top surface of the bottom channel contact; and
forming a high-k layer over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

### Claim 12 (depends on 11)

The method of claim 11, wherein the high-k layer comprises a first material that increases an initial threshold voltage (Uvvt) of the semiconductor device, and a second material that reduces the initial threshold voltage of the semiconductor device.

### Claim 13 (depends on 12)

The method of claim 12, wherein the first material comprises HfO2 and Al2O3, and the second material comprises La2O3 and Y2O3.

### Claim 14 (depends on 11)

The method of claim 11, further comprising:
forming a plurality of word lines that is positioned over the substrate; and
forming a plurality of insulating layers that is positioned over the substrate, the plurality of word lines and the plurality of insulating layers being alternatingly stacked so that the plurality of word lines are spaced apart from one another by the plurality of the insulating layers.

### Claim 15 (depends on 14)

The method of claim 14, wherein the forming the channel structure comprises:
forming a channel opening that extends through the plurality of word lines and the plurality of insulating layers, and further extends into the substrate, the channel opening having sidewalls and a bottom region to expose the substrate;
forming the bottom channel contact at the bottom region of the channel opening, the bottom channel contact being formed along the sidewalls of the channel opening and further extending into the substrate;
forming a blocking layer of the channel dielectric region along the sidewalls of the channel opening and over the bottom channel contact, the blocking layer having side portions along the sidewalls of the channel opening and a bottom portion covering the top surface of the bottom channel contact;
forming a charge trapping layer of the channel dielectric region over the blocking layer, the charge trapping layer having side portions along the side portions of the blocking layer and a bottom portion over the bottom portion of the blocking layer;
forming a tunneling layer of the channel dielectric region over the charge trapping layer, the tunneling layer having side portions along the side portions of the charge trapping layer and a bottom portion over the bottom portion of the charge trapping layer;
forming a bottom opening that extends through the bottom portions of the blocking layer, the charge trapping layer, and the tunneling layer and further into the bottom channel contact; and
forming the channel layer over the tunneling layer and through the bottom opening such that the channel layer extends through the bottom portions of the blocking layer, the charge trapping layer, and the tunneling layer and further extends into the bottom channel contact.

### Claim 16 (depends on 15)

The method of claim 15, wherein a bottom surface of the blocking layer is positioned over a bottom surface of the channel layer.

### Claim 17 (depends on 12)

The method of claim 12, wherein an increase in a thickness of the high-k layer results in an increase of the initial threshold voltage of the semiconductor device.

### Claim 18 (depends on 15)

The method of claim 15, further comprising:
forming a dielectric layer over the channel layer along the sidewalls of the channel opening; and
forming the high-k layer over the dielectric layer so that the dielectric layer is positioned between the high-k layer and the channel layer.

### Claim 19 (depends on 11)

The method of claim 11, further comprising:
forming a channel insulating layer over the high-k layer; and
forming a top channel contact over the channel insulating layer, the top channel contact being further arranged between and in contact with the channel layer.

### Claim 20 (depends on 11)

The method of claim 11, wherein the channel structure comprises one of a circular pillar-shape, a square pillar-shape, and an oval pillar-shape.