# US 2022/0045095 A1 · Semiconductor storage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0045095 A1 - Document ID: US20220045095A1 - Status: Published application - Kind: A1 - Application number: 17/198,437 - Filed: 2021-03-11 - Published: 2022-02-10 - Earliest claimed: 2020-08-07 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Kenji WATANABE - Web page: https://patentgrep.com/patent/US20220045095A1 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/10: characterised by the top-view layout - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/40: characterised by the peripheral circuit region - H10B 43/10: characterised by the top-view layout - H10B 43/40: characterised by the peripheral circuit region - H10B: ELECTRONIC MEMORY DEVICES ## Abstract According to one embodiment, a semiconductor storage device includes a stacked structure in which a plurality of conductive layers is stacked in a stacking direction via an insulating layer, a plurality of pillars extending in the stacking direction in the stacked structure and including a memory cell formed at an intersection between at least a part of the plurality of conductive layers and at least a part of the plurality of pillars, a plurality of first contacts arranged in the stacked structure, each of the first contacts reaching a different depth in the stacked structure and being connected to a conductive layer in a different layer among the plurality of conductive layers, and a plurality of second contacts arranged in the stacked structure separately from the plurality of first contacts, each of the second contacts being connected to a conductive layer identical to the conductive layer to which corresponding one of the plurality of first contacts is connected. ## Claims ### Claim 1 A semiconductor storage device comprising: a stacked structure in which a plurality of conductive layers is stacked in a stacking direction via an insulating layer; a plurality of pillars extending in the stacking direction in the stacked structure and including a memory cell formed at an intersection between at least a part of the plurality of conductive layers and at least a part of the plurality of pillars; a plurality of first contacts arranged in the stacked structure, each of the first contacts reaching a different depth in the stacked structure and being connected to a conductive layer in a different layer among the plurality of conductive layers; and a plurality of second contacts arranged in the stacked structure separately from the plurality of first contacts, each of the second contacts reaching a different depth in the stacked structure and being connected to a conductive layer identical to the conductive layer to which corresponding one of the plurality of first contacts is connected. ### Claim 2 (depends on 1) The semiconductor storage device according to claim 1, wherein one of the plurality of second contacts and the corresponding one of the plurality of first contacts are electrically connected to the memory cell formed at a height position of a corresponding conductive layer via the corresponding conductive layer among the plurality of conductive layers. ### Claim 3 (depends on 1) The semiconductor storage device according to claim 1, wherein each of the plurality of conductive layers has a longitudinal direction along a first direction intersecting the stacking direction, and a first contact and a second contact connected to a conductive layer identical among the plurality of first and second contacts are arranged in the stacked structure at a predetermined distance in the first direction. ### Claim 4 (depends on 3) The semiconductor storage device according to claim 3, wherein the first contact and the second contact connected to the conductive layer identical apply a voltage of identical potential to the conductive layer to which the first contact and the second contact are connected in different regions of the stacked structure. ### Claim 5 (depends on 3) The semiconductor storage device according to claim 3, wherein at least one of the first contact and the second contact connected to the conductive layer identical is arranged in a region other than an end portion of the stacked structure in the first direction. ### Claim 6 (depends on 1) The semiconductor storage device according to claim 1, wherein each of the plurality of conductive layers has a longitudinal direction along a first direction intersecting the stacking direction, the plurality of first contacts is arranged in a local first region of the stacked structure, the plurality of second contacts is arranged in a local second region of the stacked structure, and the first and second regions are arranged apart from each other in the first direction. ### Claim 7 (depends on 6) The semiconductor storage device according to claim 6, wherein at least one of the first and second regions is arranged in a region other than an end portion of the stacked structure in the first direction. ### Claim 8 (depends on 6) The semiconductor storage device according to claim 6, wherein a part of the plurality of pillars is arranged in the first and second regions. ### Claim 9 (depends on 1) The semiconductor storage device according to claim 1, wherein each of the plurality of first contacts and each of the plurality of second contacts are arranged in the stacked structure in a mixed way with the plurality of pillars. ### Claim 10 (depends on 9) The semiconductor storage device according to claim 9, wherein each of the plurality of conductive layers has a longitudinal direction along a first direction intersecting the stacking direction, and a part of the plurality of pillars is arranged to extend in the stacking direction in the stacked structure between two first contacts adjacent in the first direction among the plurality of first contacts. ### Claim 11 A semiconductor storage device comprising: a stacked structure in which a plurality of conductive layers is stacked in a stacking direction via an insulating layer, the stacked structure including a first region and a second region in which the number of stacking of the plurality of conductive layers matches to each other; and a plurality of pillars extending in the stacking direction in the stacked structure and including a memory layer extending in the stacking direction, wherein a plurality of first contacts is arranged in the first region, each of the first contacts reaching a different depth in the stacked structure and being connected to a conductive layer in a different layer among the plurality of conductive layers, and a plurality of second contacts is arranged in the second region, each of the second contacts reaching a different depth in the stacked structure and being connected to a conductive layer identical to the conductive layer to which corresponding one of the plurality of first contacts is connected. ### Claim 12 (depends on 11) The semiconductor storage device according to claim 11, wherein one of the plurality of second contacts and the corresponding one of the plurality of first contacts are electrically connected to a memory cell formed at a height position of a corresponding conductive layer via the corresponding conductive layer among the plurality of conductive layers. ### Claim 13 (depends on 11) The semiconductor storage device according to claim 11, wherein each of the plurality of conductive layers has a longitudinal direction along a first direction intersecting the stacking direction, and the first and second regions are arranged in the stacked structure at a predetermined distance in the first direction. ### Claim 14 (depends on 13) The semiconductor storage device according to claim 13, wherein a first contact and a second contact connected to a conductive layer identical among the plurality of first and second contacts apply a voltage of identical potential to the conductive layer to which the first contact and the second contact are connected. ### Claim 15 (depends on 13) The semiconductor storage device according to claim 13, wherein at least one of the first and second regions is arranged in a region other than an end portion of the stacked structure in the first direction. ### Claim 16 (depends on 13) The semiconductor storage device according to claim 13, wherein the plurality of first contacts is arranged in the first region in a mixed way with a first part of the plurality of pillars, and the plurality of second contacts is arranged in the second region in a mixed way with a second part of the plurality of pillars. ### Claim 17 (depends on 16) The semiconductor storage device according to claim 16, wherein the stacked structure further includes a third region in which a third part of the plurality of pillars extends inside in the stacking direction, the third part of the plurality of pillars includes a memory cell, the memory cell being formed at an intersection between at least a part of the plurality of conductive layers and the third part of the plurality of pillars, and the first part and the second part of the plurality of pillars each include a dummy pillar in which an memory cell valid for reading and writing data is not formed. ### Claim 18 (depends on 17) The semiconductor storage device according to claim 17, wherein a stacking number of the plurality of conductive layers in the third region matches the number of stacking of the plurality of conductive layers in the first and second regions. ### Claim 19 (depends on 11) The semiconductor storage device according to claim 11, wherein the plurality of first contacts is arranged in the first region in order of increasing a reaching depth toward a predetermined direction. ### Claim 20 (depends on 11) The semiconductor storage device according to claim 11, wherein the plurality of first contacts includes a first contact group and a second contact group, the first contact group including a first part of the plurality of first contacts in which a reaching depth is less than a predetermined depth, and the second contact group including a second part of the plurality of first contacts in which a reaching depth is equal to or greater than the predetermined depth, the first part of the plurality of first contacts is arranged in order of decreasing the reaching depth toward a predetermined direction in the first contact group, and the second part of the plurality of first contacts is arranged in order of increasing the reaching depth toward the predetermined direction in the second contact group.