# US 2022/0045023 A1 · Semiconductor package component, base substrate for rf transistor, and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0045023 A1 - Document ID: US20220045023A1 - Status: Published application - Kind: A1 - Application number: 17/413,403 - Filed: 2019-11-29 - Published: 2022-02-10 - Earliest claimed: 2018-12-11 - Assignees: Amosense Co., Ltd. - Applicants: Amosense Co., Ltd. - Inventors: Ji-Hyung Lee - Web page: https://patentgrep.com/patent/US20220045023A1 ## CPC - H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 20/4421: {the principal metal being copper} - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 70/04: of leadframes - H10W 70/692: Ceramics or glasses - H10W 76/134: having other interconnections parallel to the conductive base - H10W 90/811: {Multiple chips on leadframes} - H10W 44/206: {Wires} - H10W 44/226: {for HF amplifiers} - H10W 44/234: {Arrangements for impedance matching} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor package component and a semiconductor package including the same. More particularly, the present disclosure relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same. Further particularly, it relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same, capable of adjusting impedance matching of an RF transistor by connecting a die chip and a lead frame with a wire so that a length of the wire is reduced as much as the protruding height of the base substrate. ## Claims ### Claim 1 A semiconductor package component comprising: a base substrate; a ceramic layer formed on an upper portion of the base substrate; a lead frame formed on an upper portion of the ceramic layer; and a die chip mounted on the upper portion of the base substrate, wherein a protrusion is formed on the base substrate, the die chip is mounted on the protrusion, and the die chip and the lead frame are connected with a wire. ### Claim 2 (depends on 1) The semiconductor package component according to claim 1, wherein the base substrate is formed in a multi-layer structure, and the base substrate formed in the multi-layer structure includes a first copper layer, a copper-molybdenum alloy layer formed on an upper portion of the first copper layer, and a second copper layer formed on the copper-molybdenum alloy layer. ### Claim 3 (depends on 1) The semiconductor package component according to claim 1, wherein the protrusion is in integral with the base substrate. ### Claim 4 (depends on 1) The semiconductor package component according to claim 1, wherein a height of the ceramic layer is 0.4 mm to 0.7 mm, and a height of the protrusion is 0.2 mm to 0.6 mm. ### Claim 5 (depends on 1) The semiconductor package component according to claim 1, wherein a height of the protrusion is lower than a height of the ceramic layer. ### Claim 6 (depends on 5) The semiconductor package component according to claim 5, wherein, when the height of the ceramic layer is r and the height of the protrusion is k, a ratio of r and k is 1:0.5 to 1:0.8. ### Claim 7 (depends on 1) The semiconductor package component according to claim 1, wherein the ceramic layer is formed in a shape that surrounds an outer periphery of the protrusion. ### Claim 8 (depends on 1) The semiconductor package component according to claim 1, wherein an area of the protrusion is larger than an area of the die chip. ### Claim 9 (depends on 1) The semiconductor package component according to claim 1, wherein the protrusion is not in contact with the ceramic layer. ### Claim 10 A base substrate for an RF transistor made of a metal, comprising: a protrusion provided on one side of the base substrate, wherein the base substrate is formed in a multi-layer. ### Claim 11 (depends on 10) The base substrate for an RF transistor according to claim 10, wherein the base substrate includes: a base intermediate layer; a first metal layer provided on one surface of the base intermediate layer; and a second metal layer provided on the other surface of the base intermediate layer. ### Claim 12 (depends on 10) The base substrate for an RF transistor according to claim 10, wherein the base substrate has a thermal expansion coefficient of 4 to 9 ppm/° C. and a thermal conductivity of 140 to 240 W/m·K. ### Claim 13 (depends on 11) The base substrate for an RF transistor according to claim 11, wherein the base intermediate layer is a copper-molybdenum alloy layer, and the first metal layer and the second metal layer include a copper layer. ### Claim 14 (depends on 11) The base substrate for an RF transistor according to claim 11, wherein the first metal layer and the second metal layer have a melting structure in which the metal is melted and then re-hardened. ### Claim 15 A method of manufacturing a base substrate for an RF transistor made of metal, the method comprising the step of: forming a protrusion on one side of the base substrate. ### Claim 16 (depends on 15) The method of manufacturing a base substrate for an RF transistor according to claim 15, wherein the bae substrate is formed in a multi-layer, the step of forming the base substrate in the multi-layer including the steps of: preparing a base intermediate layer; and forming a metal layer by forming a first metal layer and a second metal layer on both surfaces of the base intermediate layer, respectively. ### Claim 17 (depends on 15) The method of manufacturing a base substrate for an RF transistor according to claim 15, wherein the base substrate has a thermal expansion coefficient of 4 to 9 ppm/° C. and a thermal conductivity of 140 to 240 W/m·K. ### Claim 18 (depends on 16) The method of manufacturing a base substrate for an RF transistor according to claim 16, wherein the base intermediate layer is a copper-molybdenum alloy layer, and the first metal layer and the second metal layer are a copper layer. ### Claim 19 (depends on 16) The method of manufacturing a base substrate for an RF transistor according to claim 16, wherein the first metal layer and the second metal layer have a melting structure in which the metal is melted and then re-hardened. ### Claim 20 (depends on 15) The method of manufacturing a base substrate for an RF transistor according to claim 15, wherein the protrusion is formed by welding or integrally with the base substrate.