# US 2022/0045014 A1 · Embedded packaging structure having shielding cavity and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0045014 A1 - Document ID: US20220045014A1 - Status: Published application - Kind: A1 - Application number: 17/396,240 - Filed: 2021-08-06 - Published: 2022-02-10 - Earliest claimed: 2020-08-07 - Assignees: Zhuhai ACCESS Semiconductor Co., Ltd. - Applicants: Zhuhai ACCESS Semiconductor Co., Ltd - Inventors: Xianming CHEN; Min GU; Lei FENG; Lina JIANG; Benxia HUANG; Wenshi WANG - Web page: https://patentgrep.com/patent/US20220045014A1 ## CPC - H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons - H10W 74/114: {by a substrate and the encapsulations} - H10P 72/74: {using temporarily an auxiliary support} - H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs - H10W 72/071: {Connecting or disconnecting} - H10W 74/01: Manufacture or treatment - H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation} - H10P 72/7424: {used as a support during the manufacture of self-supporting substrates} - H10P 72/7434: {used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate} - H10W 72/0198: {batch processes} - H10W 72/9413: {on encapsulations} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract An embedded package structure having a shielding cavity according to an embodiment of the present disclosure includes a device embedded in an insulating layer, and a shielding cavity enclosing the device, wherein the shielding cavity is defined by a shielding wall embedded in the insulating layer and surrounding the device on four sides, and first and second wiring layers which cover first and second end faces of the shielding wall and are electrically connected with the shielding wall; wherein a signal line leading-out opening is to formed between the first end face of the shielding wall and the first wiring layer, and a signal line connected with a terminal of the device is led, from the signal line leading-out opening, out of the shielding cavity. ## Claims ### Claim 1 An embedded package structure having a shielding cavity, comprising: a device embedded in an insulating layer, and a shielding cavity enclosing the device, wherein the shielding cavity is defined by a shielding wall embedded in the insulating layer and surrounding the device on four sides, and first and second wiring layers which cover first and second end faces of the shielding wall and are electrically connected with the shielding wall; wherein a signal line leading-out opening is formed between the first end face of the shielding wall and the first wiring layer, and a signal line connected with a terminal of the device is led, from the signal line leading-out opening, out of the shielding cavity. ### Claim 2 (depends on 1) The embedded package structure according to claim 1, wherein the shielding wall is formed by a Cu pillar. ### Claim 3 (depends on 1) The embedded package structure according to claim 1, wherein parallel grounding shielding lines are provided on both sides of the signal line. ### Claim 4 (depends on 1) The embedded package structure according to claim 1, wherein the insulating layer comprises a packaging material. ### Claim 5 (depends on 4) The embedded package structure according to claim 4, wherein the packaging material is selected from one or more of prepreg, bismaleimide/triazine resin, polyimide, polyvinyl chloride, Ajinomoto buildup film, epoxy resin or polyphenylene oxide, and the combination(s) thereof. ### Claim 6 (depends on 1) The embedded package structure according to claim 1, wherein the device is selected from any one or more of a bare chip, a passive device, and a package, and the combination(s) thereof. ### Claim 7 (depends on 1) The embedded package structure according to claim 1, wherein the shielding cavity is grounded. ### Claim 8 A manufacturing method for an embedded package structure having a shielding cavity, comprising the following steps: (A) making a frame having a through hollow cavity, wherein the frame comprises a polymer dielectric and a shielding Cu pillar embedded in the polymer dielectric and surrounding the through hollow cavity; (B) placing a device into the through hollow cavity and filling a packaging material to form a first insulating layer; (C) applying a polymer dielectric onto a first surface of the first insulating layer to form a second insulating layer; (D) forming a hole on the second insulating layer to reveal a first end face of the shielding Cu pillar and a terminal of the device, while retaining the polymer dielectric in a predetermined position of a signal line leading-out opening; (E) forming a signal line, connected with the terminal of the device, on the second insulating layer, wherein the signal line passes through the position of the signal line leading-out opening; (F) performing layer building up from the first end face of the shielding Cu pillar such that it extends beyond the second insulating layer; (G) applying a polymer dielectric onto the shielding Cu pillar to form a third insulating layer; (H) thinning the first and third insulating layers to reveal the first and second end faces of the shielding Cu pillar; and (I) forming first and second wiring layers on the third and first insulating layers wherein the first and second wiring layers cover the first and second end faces of the shielding Cu pillar and are electrically connected with the shielding Cu pillar. ### Claim 9 (depends on 8) The manufacturing method according to claim 8, wherein the step A further comprises: applying a photoresist layer on a temporary bearing board and forming a first pattern by exposure and development; plating a metal of Cu in the first pattern and forming the shielding Cu pillar and a sacrificing Cu pillar; removing the photoresist layer; applying a polymer dielectric layer to cover the shielding Cu pillar and the sacrificing Cu pillar; thinning the polymer dielectric layer to reveal top end faces of the shielding Cu pillar and the sacrificing Cu pillar; removing the temporary bearing board; and performing etching to the sacrificing Cu pillar to form the through hollow cavity wherein the shielding Cu pillar surrounds the through hollow cavity, thereby obtaining the frame having the through hollow cavity. ### Claim 10 (depends on 8) The manufacturing method according to claim 8, wherein the step A further comprises: applying a photoresist layer on a temporary bearing board and forming a first pattern by exposure and development; plating a metal of Cu in the first pattern to form the shielding Cu pillar; removing the photoresist layer; applying a polymer dielectric layer to cover the shielding Cu pillar; thinning the polymer dielectric layer to reveal a top end face of the shielding Cu pillar; removing the temporary bearing board; and performing mechanical stamping/punching or laser drilling to the polymer dielectric layer to form the through hollow cavity surrounded by the shielding Cu pillar, thereby obtaining the frame having the through hollow cavity. ### Claim 11 (depends on 8) The manufacturing method according to claim 8, wherein the step B comprises: applying an adhesive tape on one side of the frame; placing the device into the through hollow cavity such that the device is attached onto the adhesive tape; applying the packaging material on the other side of the frame to form the first insulating layer, wherein the packaging material fills a space between the device and the frame; and removing the adhesive tape. ### Claim 12 (depends on 8) The manufacturing method according to claim 8, wherein the polymer dielectric is selected from one or more of prepreg, bismaleimide/triazine resin, polyimide, polyvinyl chloride, Ajinomoto buildup film, epoxy resin or polyphenylene oxide, and the combination(s) thereof. ### Claim 13 (depends on 8) The manufacturing method according to claim 8, wherein the step E further comprises: forming shielding lines on both sides of the signal line wherein the shielding lines and the signal line together pass through the position of the signal line leading-out opening. ### Claim 14 (depends on 8) The manufacturing method according to claim 8, wherein the step F further comprises: applying a photoresist layer on the second insulating layer; performing exposure and development to the photoresist layer to form a hole revealing the first end face of the shielding Cu pillar; plating Cu to the hole and forming the built-up shielding Cu pillar; and removing the photoresist layer. ### Claim 15 (depends on 8) The manufacturing method according to claim 8, wherein the step H further comprises: performing the thinning in a manner of mechanical grinding or plasma etching. ### Claim 16 (depends on 8) The manufacturing method according to claim 8, wherein the step I further comprises: applying seed layers on the third and first insulating layers which reveal the first and second end faces of the shielding Cu pillar; applying a photoresist layer on the seed layer; performing patterning to form a wiring pattern; plating Cu in the wiring pattern; peeling the photoresist layer; and removing the seed layer.