# US 2022/0044978 A1 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0044978 A1 - Document ID: US20220044978A1 - Status: Published application - Kind: A1 - Application number: 17/276,348 - Filed: 2019-03-06 - Published: 2022-02-10 - Earliest claimed: 2019-03-06 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Koichiro NISHIZAWA; Takayuki HISAKA - Web page: https://patentgrep.com/patent/US20220044978A1 ## CPC - H10W 76/132: having other interconnections through an insulated passage in the conductive base - H10W 76/17: characterised by their materials - H10W 70/611: {for connecting multiple chips together} - H10W 70/685: comprising multiple insulating layers - H10W 76/12: characterised by their shape - H10W 76/60: Seals - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A device (2) is provided on an upper surface of the device substrate (1). A sealing frame (16) made of a non-electrolytic plating reactive catalyst metal is provided on the upper surface of the device substrate (1) and surrounds the device (2). An upper surface of the device substrate (1) and a lower surface of the cap substrate (10) are joined in a hollow state through the sealing frame (16). A plurality of electrodes (8,11,12) are connected to the device (2) and extended out of the device substrate (1) and the cap substrate (10). A metal film (20) is provided on an outer surface of the sealing frame (16) and not provided on the device substrate (1) and the cap substrate (10). ## Claims ### Claim 1 A semiconductor device comprising: a device substrate; a device provided on an upper surface of the device substrate; a cap substrate; a sealing frame provided on the upper surface of the device substrate, surrounding the device, made of a non-electrolytic plating reactive catalyst metal, and joining the device substrate and the cap substrate in a hollow state; a plurality of electrodes connected to the device and extended out of the device substrate and the cap substrate; and a metal film provided on an outer surface of the sealing frame and not provided on the device substrate and the cap substrate. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, further comprising: a first receiving pad provided on the upper surface of the device substrate and surrounding the device; and a second receiving pad provided on a lower surface of the cap substrate, wherein the sealing frame is joined with the first receiving pad and the second receiving pad, outermost surfaces of the first and second receiving pads are made of a non-electrolytic plating reactive catalyst metal, and the metal film covers joining parts of the first and second receiving pads with the sealing frame. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein outermost surfaces of the plurality of electrodes are made of a non-electrolytic plating reactive catalyst metal, and the metal film covers surfaces of the plurality of electrodes extended out of the device substrate and the cap substrate which are joined. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the catalyst metal is Au, Ag, Cu, Ni, Co, Pd, Pt, In, Sn, or Rh. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the catalyst metal is Au, Ag, Pd, Pt, or Rh. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the catalyst metal is Pt or Pd. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the metal film is made of any of Au, Ag, Cu, Ni, Co, Pd, Pt, In, Sn, and Rh, or an alloy thereof. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the metal film is made of any of Ni, Co, Pd, and Rh, or an alloy thereof. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein a thickness of the metal film is 1 μm or larger and smaller than 10 μm. ### Claim 10 A method for manufacturing a semiconductor device comprising: forming a device on an upper surface of a device substrate; forming a sealing frame surrounding the device on the upper surface of the device substrate by using metal particle paste of a non-electrolytic plating reactive catalyst metal; aligning the device substrate and a cap substrate and joining the device substrate and the cap substrate in a hollow state through the sealing frame; forming a plurality of electrodes connected to the device and extended out of the device substrate and the cap substrate; and after joining the device substrate and the cap substrate, forming a metal film on an outer surface of the sealing frame by non-electrolytic plating without forming the metal film on the device substrate and the cap substrate. ### Claim 11 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, further comprising: forming a first receiving pad surrounding the device on the upper surface of the device substrate; and forming a second receiving pad on a lower surface of the cap substrate, wherein the sealing frame is joined with the first receiving pad and the second receiving pad, outermost surfaces of the first and second receiving pads are made of a non-electrolytic plating reactive catalyst metal, and the metal film covers joining parts of the first and second receiving pads with the sealing frame. ### Claim 12 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein outermost surfaces of the plurality of electrodes are made of a non-electrolytic plating reactive catalyst metal, and the metal film covers surfaces of the plurality of electrodes extended out of the device substrate and the cap substrate which are joined. ### Claim 13 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein the devices are formed on the upper surface of the device substrate, after only one of the device substrate and the cap substrate is diced and separated into the individual devices, the metal film is formed, and after the metal film is formed, the other of the device substrate and the cap substrate is diced and separated into the individual devices. ### Claim 14 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein the catalyst metal is Au, Ag, Cu, Ni, Co, Pd, Pt, In, Sn, or Rh. ### Claim 15 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein the catalyst metal is Au, Ag, Pd, Pt, or Rh. ### Claim 16 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein the catalyst metal is Pt or Pd. ### Claim 17 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein the metal film is made of any of Au, Ag, Cu, Ni, Co, Pd, Pt, In, Sn, and Rh, or an alloy thereof. ### Claim 18 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein the metal film is made of any of Ni, Co, Pd, and Rh, or an alloy thereof. ### Claim 19 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein a thickness of the metal film is 1 μm or larger and smaller than 10 μm.