# US 2022/0044935 A1 · Substrate processing apparatus and substrate processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0044935 A1 - Document ID: US20220044935A1 - Status: Published application - Kind: A1 - Application number: 17/413,605 - Filed: 2019-12-09 - Published: 2022-02-10 - Earliest claimed: 2018-12-21 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Hirotoshi MORI; Takeshi TAMURA - Web page: https://patentgrep.com/patent/US20220044935A1 ## CPC - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks - B23K 26/57: the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming - H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - B23K 2103/56: {being semiconducting} - H10P 10/12: {Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P90/1914)} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM ## Abstract A substrate processing apparatus configured to process a substrate includes a holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; and a modifying device configured to form, to an inside of the first substrate held by the holder, a peripheral modification layer by radiating laser light for periphery along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof, and, also, configured to form an internal modification layer by radiating laser light for internal surface along a plane direction of the first substrate. The modifying device switches the laser light for periphery and the laser light for internal surface by adjusting at least a shape or a number of the laser light for periphery and the laser light for internal surface. ## Claims ### Claim 1 A substrate processing apparatus configured to process a substrate, comprising: a holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a modifying device configured to form, to an inside of the first substrate held by the holder, a peripheral modification layer by radiating laser light for periphery along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof, and, also, configured to form an internal modification layer by radiating laser light for internal surface along a plane direction of the first substrate, wherein the modifying device switches the laser light for periphery and the laser light for internal surface by adjusting at least a shape or a number of the laser light for periphery and the laser light for internal surface. ### Claim 2 (depends on 1) The substrate processing apparatus of claim 1, wherein the modifying device includes a LCOS. ### Claim 3 (depends on 1) The substrate processing apparatus of claim 1, wherein the modifying device is calibrated before the combined substrate is held on the holder. ### Claim 4 (depends on 1) The substrate processing apparatus of claim 1, wherein the laser light for periphery includes multiple laser lights for periphery, and the modifying device radiates the multiple laser lights for periphery to the inside of the first substrate at a same time, and focal positions of the multiple laser lights for periphery are different in a thickness direction of the first substrate. ### Claim 5 (depends on 1) The substrate processing apparatus of claim 1, wherein the laser light for internal surface includes multiple laser lights for internal surface, and the modifying device radiates the multiple laser lights for internal surface to the inside of the first substrate at a same time, and focal positions of the multiple laser lights for internal surface are different in the plane direction of the first substrate. ### Claim 6 (depends on 1) The substrate processing apparatus of claim 1, wherein the modifying device forms a split modification layer by radiating laser light for split to the inside of the first substrate held by the holder from the peripheral modification layer toward an outer side in a diametrical direction, and the modifying device adjusts at least a shape or a number of the laser light for split. ### Claim 7 (depends on 1) The substrate processing apparatus of claim 1, wherein the modifying device includes multiple modifying devices. ### Claim 8 (depends on 1) The substrate processing apparatus of claim 1, wherein the modifying device is configured to be moved up and down in a vertical direction and, also, moved in a horizontal direction. ### Claim 9 A substrate processing method of processing a substrate, comprising: holding, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate with a holder; forming a peripheral modification layer by radiating laser light for periphery from a modifying device to an inside of the first substrate held by the holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof; and forming an internal modification layer by radiating laser light for internal surface from the modifying device to the inside of the first substrate held by the holder along a plane direction of the first substrate, wherein the modifying device switches the laser light for periphery and the laser light for internal surface by adjusting at least a shape or a number of the laser light for periphery and the laser light for internal surface. ### Claim 10 (depends on 9) The substrate processing method of claim 9, wherein the modifying device switches the laser light for periphery and the laser light for internal surface by a LCOS belonging to the modifying device. ### Claim 11 (depends on 9) The substrate processing method of claim 9, wherein the modifying device is calibrated before the combined substrate is held on the holder. ### Claim 12 (depends on 9) The substrate processing method of claim 9, wherein the laser light for periphery includes multiple laser lights for periphery, and the modifying device radiates the multiple laser lights for periphery to the inside of the first substrate at a same time in the forming of the peripheral modification layer, and focal positions of the multiple laser lights for periphery are different in a thickness direction of the first substrate. ### Claim 13 (depends on 9) The substrate processing method of claim 9, wherein the laser light for internal surface includes multiple laser lights for internal surface, and the modifying device radiates the multiple laser lights for internal surface to the inside of the first substrate at a same time in the forming of the internal modification layer, and focal positions of the multiple laser lights for internal surface are different in the plane direction of the first substrate. ### Claim 14 (depends on 9) The substrate processing method of claim 9, further comprising: forming a split modification layer by radiating laser light for split from the modifying device to the inside of the first substrate held by the holder from the peripheral modification layer toward an outer side in a diametrical direction, wherein the modifying device adjusts at least a shape or a number of the laser light for split. ### Claim 15 (depends on 9) The substrate processing method of claim 9, wherein the modifying device includes multiple modifying devices, and each of the multiple modifying devices radiates the laser light for periphery to the inside of the first substrate at a same time in the forming of the peripheral modification layer. ### Claim 16 (depends on 9) The substrate processing method of claim 9, wherein the modifying device includes multiple modifying devices, and each of the multiple modifying devices radiates the laser light for internal surface to the inside of the first substrate at a same time in the forming of the internal modification layer.