# US 2022/0044745 A1 · Memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0044745 A1 - Document ID: US20220044745A1 - Status: Published application - Kind: A1 - Application number: 16/951,160 - Filed: 2020-11-18 - Published: 2022-02-10 - Earliest claimed: 2020-08-06 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Hyung Jin CHOI - Web page: https://patentgrep.com/patent/US20220044745A1 ## CPC - G11C 16/3459: {Circuits or methods to verify correct programming of nonvolatile memory cells} - G11C 11/5628: {Programming or writing circuits; Data input circuits} - G11C 11/5642: {Sensing or reading circuits; Data output circuits} - G11C 16/08: Address circuits; Decoders; Word-line control circuits - G11C 16/10: Programming or data input circuits - G11C 16/26: Sensing or reading circuits; Data output circuits - G11C 16/30: Power supply circuits - G11C 16/32: Timing circuits - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G11C 2211/5642: Multilevel memory with buffers, latches, registers at input or output - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract The present technology includes memory device and a method of operating the same. The memory device includes a current sensing circuit configured to perform an individual current sensing operation according to a verify result of each of selected program states in an individual current sensing mode and perform an entire current sensing operation according to a verify result of the entire memory cells regardless of the selected program states after the individual current sensing operation is performed in a mixed current sensing mode, and a voltage generator configured to apply a program voltage to a selected word line connected to the memory cells during a first amount of time in the individual current sensing mode and apply the program voltage to the selected word line during a second amount of time greater than the first amount of time in the mixed current sensing mode, in response to the operation code. ## Claims ### Claim 1 A memory device comprising: a plurality of memory cells; page buffers configured to store sensing data sensed from the memory cells; a current sensing circuit configured to perform an individual current sensing operation of outputting a pass signal or a fail signal according to a verify result of each of selected program states in an individual current sensing mode and perform an entire current sensing operation of outputting the pass signal or the fail signal according to a verify result of the entire memory cells regardless of the selected program states after the individual current sensing operation is performed in a mixed current sensing mode, in response to a sensing mode signal; a sensing mode selector configured to output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode in response to the pass signal or the fail signal, and output an operation code according to the sensing mode signal; and a voltage generator configured to apply a program voltage to a selected word line connected to the memory cells during a first amount of time in the individual current sensing mode and apply the program voltage to the selected word line during a second amount of time greater than the first amount of time in the mixed current sensing mode, in response to the operation code. ### Claim 2 (depends on 1) The memory device of claim 1, wherein the sensing mode selector comprises: a counter configured to count the number of program loops in response to the pass signal or the fail signal and output an accumulated number; a mode selector configured to compare the accumulated number with a reference number, and output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode according to a comparison result; and a code generator configured to output the operation code to the voltage generator in response to the sensing mode signal so that the program voltage is applied to the selected word line during the first amount of time or the second amount of time. ### Claim 3 (depends on 2) The memory device of claim 2, wherein the counter increases the accumulated number whenever the fail signal is input, outputs the accumulated number, and initializes the accumulated number when the pass signal is input. ### Claim 4 (depends on 2) The memory device of claim 2, wherein the mode selector outputs the sensing mode signal as a signal corresponding to the individual current sensing mode when the accumulated number is less than the reference number, and outputs the sensing mode signal as a signal corresponding to the mixed current sensing mode when the accumulated number is equal to or greater than the reference number. ### Claim 5 (depends on 2) The memory device of claim 2, wherein the code generator outputs the operation code so that the program voltage is applied to the selected word line during the first duration of time when the sensing mode signal is a signal corresponding to the individual current sensing mode, and outputs the operation code so that the program voltage is applied to the selected word line during the second duration of time when the sensing mode signal is a signal corresponding to the mixed current sensing mode. ### Claim 6 (depends on 1) The memory device of claim 1, wherein the current sensing circuit performs the individual current sensing operation or the entire current sensing operation by comparing a set number with a number of fail bits detected in a verify operation of a previous program loop. ### Claim 7 (depends on 6) The memory device of claim 6, wherein the set number used in the individual current sensing operation is different from the set number used in the entire current sensing operation. ### Claim 8 (depends on 1) The memory device of claim 1, wherein the voltage generator is configured to discharge the selected word line during a set time and apply a compensation voltage to the selected word line after applying the program voltage to the selected word line during the first or second duration of time. ### Claim 9 (depends on 1) The memory device of claim 1, wherein a difference between the second duration of time and the first duration of time is set to a time difference between a time at which a sub program operation is ended in the individual current sensing mode and a time at which the entire current sensing operation is ended in the mixed current sensing mode. ### Claim 10 A memory device comprising: a plurality of memory cells; page buffers configured to store sensing data sensed from the memory cells; a current sensing circuit configured to perform an individual current sensing operation of outputting a pass signal or a fail signal according to a verify result of each of selected program states in an individual current sensing mode and perform an entire current sensing operation of outputting the pass signal or the fail signal according to a verify result of the entire memory cells regardless of the selected program states after the individual current sensing operation is performed in a mixed current sensing mode, in response to a sensing mode signal; a sensing mode selector configured to output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode in response to the pass signal or the fail signal, and output an operation code according to the sensing mode signal; and a voltage generator configured to discharge a selected word line during a first duration of time in the individual current sensing mode and discharge the selected word line during a second duration of time greater than the first duration of time in the mixed current sensing mode, in response to the operation code, after applying a program voltage to the selected word line connected to the memory cells, during a program operation. ### Claim 11 (depends on 10) The memory device of claim 10, wherein the sensing mode selector comprises: a counter configured to count the number of program loops in response to the pass signal or the fail signal and output an accumulated number; a mode selector configured to compare the accumulated number with a reference number, and output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode according to a comparison result; and a code generator configured to output the operation code to the voltage generator in response to the sensing mode signal for the voltage generator to discharge the selected word line during the first duration of time or the second duration of time. ### Claim 12 (depends on 11) The memory device of claim 11, wherein the counter increases the accumulated number whenever the fail signal is input, outputs the accumulation number, and initializes the accumulated number when the pass signal is input. ### Claim 13 (depends on 11) The memory device of claim 11, wherein the mode selector outputs the sensing mode signal as a signal corresponding to the individual current sensing mode when the accumulated number is less than the reference number, and outputs the sensing mode signal as a signal corresponding to the mixed current sensing mode when the accumulated number is equal to or greater than the reference number. ### Claim 14 (depends on 11) The memory device of claim 11, wherein the code generator outputs the operation code for the voltage generator to discharge the selected word line during the first duration of time when the sensing mode signal is a signal corresponding to the individual current sensing mode, and outputs the operation code for the voltage generator to discharge the selected word line during the second duration of time when the sensing mode signal is a signal corresponding to the mixed current sensing mode. ### Claim 15 (depends on 10) The memory device of claim 10, wherein the current sensing circuit performs the individual current sensing operation or the entire current sensing operation by comparing a set number with a number of fail bits detected in a verify operation of a previous program loop. ### Claim 16 (depends on 15) The memory device of claim 15, wherein the set number used in the individual current sensing operation is different from the set number used in the entire current sensing operation. ### Claim 17 (depends on 10) The memory device of claim 10, wherein the voltage generator is configured to discharge the selected word line during the first or second duration of time and then apply a compensation voltage to the selected word line. ### Claim 18 A memory device comprising: a plurality of memory cells; page buffers configured to store sensing data sensed from the memory cells; a current sensing circuit configured to perform an individual current sensing operation of outputting a pass signal or a fail signal according to a verify result of each of selected program states in an individual current sensing mode and perform an entire current sensing operation of outputting the pass signal or the fail signal according to a verify result of the entire memory cells regardless of the selected program states after the individual current sensing operation is performed in a mixed current sensing mode, in response to a sensing mode signal; a sensing mode selector configured to output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode in response to the pass signal or the fail signal, and output an operation code according to the sensing mode signal; and a voltage generator configured to apply a compensation voltage to a discharged selected word line during a first duration of time in the individual current sensing mode and apply the compensation voltage to the discharged selected word line during a second duration of time greater than the first duration of time in the mixed current sensing mode, in response to the operation code, after applying a program voltage to the selected word line connected to the memory cells and discharging the selected word line, during a program operation. ### Claim 19 (depends on 18) The memory device of claim 18, wherein the sensing mode selector comprises: a counter configured to count an accumulation number of program loops in response to the pass signal or the fail signal and output the accumulation number; a mode selector configured to compare the accumulation number and a reference number with each other, and output the sensing mode signal corresponding to the individual current sensing mode or the mixed current sensing mode according to a comparison result; and a code generator configured to output the operation code to the voltage generator in response to the sensing mode signal for the voltage generator to apply the compensation voltage to the selected word line during the first duration of time or the second duration of time. ### Claim 20 (depends on 19) The memory device of claim 19, wherein the code generator outputs the operation code for the voltage generator to apply the compensation voltage during the first duration of time when the sensing mode signal is a signal corresponding to the individual current sensing mode, and outputs the operation code for the voltage generator to apply the compensation voltage during the second duration of time when the sensing mode signal is a signal corresponding to the mixed current sensing mode.