# US 2022/0037537 A1 · Vertical bipolar transistor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0037537 A1 - Document ID: US20220037537A1 - Status: Published application - Kind: A1 - Application number: 16/940,789 - Filed: 2020-07-28 - Published: 2022-02-03 - Earliest claimed: 2020-07-28 - Assignees: Amazing Microelectronic Corp. - Applicants: Amazing Microelectronic Corp. - Inventors: CHIH-TING YEH; SUNG-CHIH HUANG; CHE-HAO CHUANG - Web page: https://patentgrep.com/patent/US20220037537A1 ## CPC - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 62/108: {having localised breakdown regions, e.g. built-in avalanching regions (in self-protected thyristors H10D18/211)} - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/13: Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A vertical bipolar transistor device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, at least one doped well, an isolation structure, and an external conductor. The heavily-doped semiconductor substrate and the doped well have a first conductivity type, and the first semiconductor epitaxial layer has a second conductivity type. The first semiconductor epitaxial layer is formed on the heavily-doped semiconductor substrate. The doped well is formed in the first semiconductor epitaxial layer. The isolation structure, formed in the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer, surrounds the first semiconductor epitaxial layer and the at least one doped well. The external conductor is arranged outside the first semiconductor epitaxial layer and the doped well and electrically connected to the first semiconductor epitaxial layer and the doped well. ## Claims ### Claim 1 A vertical bipolar transistor device comprising: a heavily-doped semiconductor substrate having a first conductivity type; a first semiconductor epitaxial layer, having a second conductivity type, formed on the heavily-doped semiconductor substrate; at least one doped well, having the first conductivity type, formed in the first semiconductor epitaxial layer; an isolation structure, formed in the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer, surrounding the first semiconductor epitaxial layer and the at least one doped well; and an external conductor arranged outside the first semiconductor epitaxial layer and the at least one doped well and electrically connected to the first semiconductor epitaxial layer and the at least one doped well; wherein there is nothing between the external conductor and the first semiconductor epitaxial layer and there is nothing between the external conductor and the at least one doped well. ### Claim 2 (depends on 1) The vertical bipolar transistor device according to claim 1, wherein the first conductivity type is an N type and the second conductivity type is a P type. ### Claim 3 (depends on 1) The vertical bipolar transistor device according to claim 1, wherein the first conductivity type is a P type and the second conductivity type is an N type. ### Claim 4 (depends on 1) The vertical bipolar transistor device according to claim 1, further comprising: at least one first heavily-doped area, having the first conductivity type, formed in the at least one doped well; and at least one second heavily-doped area, having the second conductivity type, formed in the first semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer is electrically connected to the at least one doped well through the at least one first heavily-doped area, the at least one second heavily-doped area, and the external conductor. ### Claim 5 (depends on 4) The vertical bipolar transistor device according to claim 4, wherein the at least one second heavily-doped area surrounds the at least one first heavily-doped area and the at least one doped well. ### Claim 6 (depends on 4) The vertical bipolar transistor device according to claim 4, wherein the at least one first heavily-doped area comprises a plurality of first heavily-doped areas, the at least one second heavily-doped area comprises a plurality of second heavily-doped areas, the at least one doped well comprises a plurality of doped wells, the plurality of first heavily-doped areas are respectively formed in the plurality of doped wells, and the plurality of doped wells and the plurality of second heavily-doped areas are alternately arranged. ### Claim 7 (depends on 4) The vertical bipolar transistor device according to claim 4, further comprising a heavily-doped buried layer formed between the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer and under the at least one doped well. ### Claim 8 (depends on 7) The vertical bipolar transistor device according to claim 7, wherein the heavily-doped buried layer has the first conductivity type, and a bottom of the isolation structure is deeper than an interface between the heavily-doped buried layer and the first semiconductor epitaxial layer. ### Claim 9 (depends on 7) The vertical bipolar transistor device according to claim 7, wherein the heavily-doped buried layer has the second conductivity type, and a bottom of the isolation structure is deeper than an interface between the heavily-doped buried layer and the heavily-doped semiconductor substrate. ### Claim 10 (depends on 7) The vertical bipolar transistor device according to claim 7, wherein the heavily-doped buried layer touches the isolation structure. ### Claim 11 (depends on 1) The vertical bipolar transistor device according to claim 1, wherein the heavily-doped semiconductor substrate is electrically connected to a first pin and the external conductor is electrically connected to a second pin. ### Claim 12 (depends on 4) The vertical bipolar transistor device according to claim 4, further comprising a second semiconductor epitaxial layer formed between the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer and under the at least one doped well. ### Claim 13 (depends on 12) The vertical bipolar transistor device according to claim 12, wherein the second semiconductor epitaxial layer has the first conductivity type, and a bottom of the isolation structure is deeper than an interface between the second semiconductor epitaxial layer and the first semiconductor epitaxial layer. ### Claim 14 (depends on 12) The vertical bipolar transistor device according to claim 12, wherein the second semiconductor epitaxial layer has the second conductivity type, and a bottom of the isolation structure is deeper than an interface between the second semiconductor epitaxial layer and the heavily-doped semiconductor substrate.