# US 2022/0037531 A1 · Thin film transistor and method for manufacturing the same

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- Number: US 2022/0037531 A1
- Document ID: US20220037531A1
- Status: Published application
- Kind: A1
- Application number: 17/017,732
- Filed: 2020-09-11
- Published: 2022-02-03
- Earliest claimed: 2020-07-28
- Assignees: National Sun Yat-Sen University
- Applicants: National Sun Yat-Sen University
- Inventors: Ting-Chang Chang; Yu-Lin Tsai; Yu-Ching Tsao; Hong-Chih Chen; Shin-Ping Huang; Mao-Chou Tai; Po-Hsun Chen
- Web page: https://patentgrep.com/patent/US20220037531A1

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 62/80: characterised by the materials
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10P 14/6329: {using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P 14/69391: {the material containing aluminium, e.g. Al2O3}
- H10P 14/69392: {the material containing hafnium, e.g. HfO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 14/3426: {Oxides}
- H10P 14/3438: {Doping during depositing}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A thin film transistor is used to solve a problem of low process efficiency of the conventional thin film transistor in preventing hydrogen diffusion. The thin film transistor includes a substrate, multilayer thin films laminated on the substrate, and at least one fluorine-containing thin film laminated in substitution for the multilayer thin films. Each of the multilayer thin films is a gate insulating layer, an active layer, a buffer layer, and a dielectric layer or a protective layer. Each of the at least one fluorine-containing thin film is a fluorine-doped insulating layer, a fluorine-doped active layer, a fluorine-doped buffer layer, and a fluorine-doped dielectric layer or a fluorine-doped protective layer. The invention further discloses a method for manufacturing the thin film transistor.

## Claims

### Claim 1

A thin film transistor, comprising:
a substrate;
multilayer thin films laminated on the substrate, with each of the multilayer thin films being a gate insulating layer, an active layer, a buffer layer, a dielectric layer or a protective layer; and
at least one fluorine-containing thin film laminated in substitution for the multilayer thin films;
wherein each of the at least one fluorine-containing thin film is a fluorine-doped insulating layer, a fluorine-doped active layer, a fluorine-doped buffer layer, a fluorine-doped dielectric layer or a fluorine-doped protective layer.

### Claim 2 (depends on 1)

The thin film transistor of claim 1, wherein the material of each of the multilayer thin films is silicon dioxide, indium gallium zinc oxide, indium tin zinc oxide, silicon nitride, aluminum oxide or hafnium oxide.

### Claim 3 (depends on 1)

The thin film transistor of claim 1, wherein the material of the at least one fluorine-containing thin film is silicon dioxide doped with fluorine, indium gallium zinc oxide doped with fluorine, indium tin zinc oxide doped with fluorine, silicon nitride doped with fluorine, aluminum oxide doped with fluorine, or hafnium oxide doped with fluorine.

### Claim 4

A method for manufacturing a thin film transistor, comprising:
forming multilayer thin films and a plurality of electrodes on a substrate by a vapor deposition; and
introducing a fluorine-containing gas during the vapor deposition to form at least one layer of fluorine-containing thin film.

### Claim 5 (depends on 4)

The method for manufacturing a thin film transistor of claim 4, wherein the vapor deposition is a plasma enhanced chemical vapor deposition or a radio frequency magnetron sputtering.

### Claim 6 (depends on 4)

The method for manufacturing a thin film transistor of claim 4, wherein the fluorine-containing gas is silicon tetrafluoride.