# US 2022/0037469 A1 · Elastic strain engineering of defect doped materials > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0037469 A1 - Document ID: US20220037469A1 - Status: Published application - Kind: A1 - Application number: 17/400,097 - Filed: 2021-08-11 - Published: 2022-02-03 - Earliest claimed: 2018-10-12 - Assignees: Massachusetts Institute of Technology; Nanyang Technological University - Applicants: Massachusetts Institute of Technology; Nanyang Technological University - Inventors: Ming Dao; Ju Li; Zhe Shi; Subra Suresh - Web page: https://patentgrep.com/patent/US20220037469A1 ## CPC - H10D 30/751: {having composition variations in the channel regions} - H10D 62/53: the imperfections being within the semiconductor body - B81B 7/008: {MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00)} - H10D 62/834: further characterised by the dopants - H10N 30/886: {Additional mechanical prestressing means, e.g. springs} - H10N 70/20: Multistable switching devices, e.g. memristors - H10N 70/801: {Constructional details of multistable switching devices} - H10N 70/823: {adapted for essentially horizontal current flow, e.g. bridge type devices} - H10N 70/883: {Oxides or nitrides} - H10N 70/8833: {Binary metal oxides, e.g. TaOx} - H10N 70/8845: {Carbon or carbides} - H10P 14/38: {characterised by treatments done after the formation of the materials} - H10D 62/121: {oriented parallel to substrates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Compositions and methods related to straining defect doped materials as well as their methods of use in electrical circuits are generally described. ## Claims ### Claim at position 1 1-16. (canceled) ### Claim 17 A method of controlling a conductive state of a defect doped material, the method comprising: applying a strain to at least a portion of the defect doped material; and transitioning the defect doped material from a non-conductive material to a semiconducting material or a conducting material, wherein an activation energy to ionize defects of the defect doped material in a strained state is less than the activation energy to ionize the defects when the defect doped material is in an unstrained state. ### Claim 18 (depends on 17) The method of claim 17, wherein transitioning the defect doped material from the non-conductive material to the semiconducting material or the conducting material comprises decreasing the activation energy to ionize defects of the defect doped material to form a plurality of charge carriers from a first energy that is greater than or equal to 1,000 meV to a second energy that is less than or equal to 200 meV. ### Claim 19 (depends on 17) The method of claim 17, wherein the strain is elastic strain. ### Claim 20 (depends on 17) The method of claim 17, wherein the strain is applied in an amount between or equal to 1% and 20%. ### Claim 21 (depends on 17) The method of claim 17, wherein the strain is uniformly applied to the defect doped material. ### Claim 22 (depends on 17) The method of claim 17, wherein the strain is only applied to a portion of the defect doped material. ### Claim 23 (depends on 17) The method of claim 17, wherein applying the strain includes deforming the defect doped material with an actuator. ### Claim 24 (depends on 23) The method of claim 23, wherein the actuator is a microelectromechanical actuator. ### Claim 25 (depends on 17) The method of claim 17, wherein applying the strain includes deforming a substrate the defect doped material is disposed on. ### Claim 26 (depends on 17) The method of claim 17, wherein the defect doped material comprises a p-type dopant. ### Claim 27 (depends on 17) The method of claim 17, wherein the defect doped material comprises a n-type dopant. ### Claim 28 (depends on 17) The method of claim 17, further comprising removing the strain from the at least a portion of the defect doped material. ### Claim 29 (depends on 28) The method of claim 28, further comprising transitioning the defect doped material from the semiconducting material or the conducting material to the non-conductive material. ### Claim 30 (depends on 29) The method of claim 29, wherein transitioning the defect doped material from the semiconducting material or the conducting material comprises increasing the activation energy from the second energy that is less than or equal to 200 meV to the first energy that is greater than or equal to 1,000 meV. ### Claim at position 16 31-42. (canceled) ### Claim 43 A method of controlling a conductive state of a portion of an electrical circuit, the method comprising: applying a strain to a defect doped material forming at least a portion of the electrical circuit; and transitioning the defect doped material from a non-conductive material to a semiconducting material or a conducting material, wherein an activation energy to ionize defects of the defect doped material in a strained state is less than the activation energy to ionize the defects when the defect doped material is in an unstrained state. ### Claim 44 (depends on 43) The method of claim 43, wherein transitioning the defect doped material from the non-conductive material to the semiconducting material or the conducting material comprises decreasing the activation energy to ionize defects of the defect doped material to form a plurality of charge carriers from a first energy that is greater than or equal to 1,000 meV to a second energy that is less than or equal to 200 meV. ### Claim 45 (depends on 43) The method of claim 43, wherein the defect doped material comprises at least one selected from the group of diamond, gallium oxide, gallium nitride, and boron nitride. ### Claim 46 (depends on 43) The method of claim 43, wherein the defect doped material comprises nitrogen, boron, and/or phosphorus. ### Claim 47 (depends on 43) The method of claim 43, wherein the defect doped material comprises a p-type dopant and/or an n-type dopant. ### Claim 48 (depends on 43) The method of claim 43, further comprising applying the strain to the defect doped material with an actuator.