# US 2022/0037464 A1 · Die-to-die isolation structures for packaged transistor devices

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- Number: US 2022/0037464 A1
- Document ID: US20220037464A1
- Status: Published application
- Kind: A1
- Application number: 16/944,002
- Filed: 2020-07-30
- Published: 2022-02-03
- Earliest claimed: 2020-07-30
- Assignees: Cree, Inc.
- Applicants: Cree, Inc.
- Inventors: Lei Zhao; Fabian Radulescu
- Web page: https://patentgrep.com/patent/US20220037464A1

## CPC

- H10D 62/113: {Isolations within a component, i.e. internal isolations}
- H10D 64/257: {for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 64/254: {for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts}
- H10D 84/151: {LDMOS having built-in components}
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/265: {Shielding wires, e.g. constant potential wires}
- H10W 42/273: {the arrangements being between laterally adjacent chips, e.g. walls between chips}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/111: {Field plates}
- H10W 44/206: {Wires}
- H10W 44/226: {for HF amplifiers}
- H10W 44/234: {Arrangements for impedance matching}
- H10W 44/241: {for passive devices or passive elements}
- H10W 72/075: {of bond wires}
- H10W 72/07553: {changes in shapes}
- H10W 72/07554: {changes in dispositions}
- H10W 72/537: {Multiple bond wires having different shapes}
- H10W 72/551: {Materials of bond wires}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.

## Claims

### Claim 1

A transistor amplifier package, comprising:
a base;
one or more transistor dies on the base;
first and second leads coupled to the one or more transistor dies, wherein the first and second leads define respective radio frequency (RF) signal paths; and
an isolation structure between the respective RF signal paths, the isolation structure comprising first and second wire bonds in a crossed configuration defining at least one cross point therebetween.

### Claim 2 (depends on 1)

The transistor amplifier package of claim 1, wherein the base comprises a conductive element that is configured to provide an electrical ground for the one or more transistor dies, and wherein the first and second wire bonds are coupled to the conductive element and/or to respective bond pads that are electrically connected to the conductive element.

### Claim 3 (depends on 2)

The transistor amplifier package of claim 2, wherein the isolation structure comprises a plurality of crossed wire bond structures arranged in one or more dimensions between the respective RF signal paths, wherein a respective one of the crossed wire bond structures comprises the first and second wire bonds in the crossed configuration.

### Claim 4 (depends on 3)

The transistor amplifier package of claim 3, wherein at least one of the first and second wire bonds comprises a plurality of wire bonds, such that the first and/or second wire bonds cross two or more of the plurality of wire bonds.

### Claim 5 (depends on 2)

The transistor amplifier package of claim 2, wherein the respective bond pads include bond pads on a surface of the one or more transistor dies and/or bond pads on a surface of one or more passive devices on the base.

### Claim 6 (depends on 2)

The transistor amplifier package of claim 2, wherein the isolation structure continuously extends between the respective RF signal paths, and wherein the first and second wire bonds define multiple cross points therebetween.

### Claim 7 (depends on 2)

The transistor amplifier package of claim 2, wherein the respective RF signal paths comprise first and second RF amplifier paths, wherein the first and second leads comprise first and second input leads or first and second output leads of the first and second RF amplifier paths, respectively, and wherein the one or more transistor dies comprises first and second transistor dies coupled to the first and second leads, respectively.

### Claim 8 (depends on 7)

The transistor amplifier package of claim 7, wherein the first and second wire bonds are coupled to the respective bond pads, wherein the respective bond pads include bond pads that are on the first and second transistor dies of the first and second RF amplifier paths and/or bond pads that are on respective passive devices coupled to the first and second transistor dies.

### Claim 9 (depends on 7)

The transistor amplifier package of claim 7, wherein the conductive element comprises a ground connection lead between the first and second input leads or between the first and second output leads.

### Claim 10 (depends on 7)

The transistor amplifier package of claim 7, wherein the conductive element comprises a surface of the base including the one or more transistor dies thereon, and wherein the base is free of a ground connection lead.

### Claim 11 (depends on 7)

The transistor amplifier package of claim 7, wherein the isolation structure comprises a first isolation structure between the first and second RF amplifier paths, and further comprising:
a second isolation structure on at least one of the first and second transistor dies between input and output RF signal paths of a corresponding one of the first and second RF amplifier paths, the second isolation structure comprising respective wire bonds in a linear or crossed configuration.

### Claim 12 (depends on 2)

The transistor amplifier package of claim 2, wherein the respective RF signal paths comprise input and output RF signal paths of a RF amplifier path, wherein the first and second leads comprise input and output leads of the RF amplifier path, respectively, and wherein the one or more transistor dies comprises a first transistor die coupled between the input and output leads.

### Claim 13 (depends on 12)

The transistor amplifier package of claim 12, wherein the respective bond pads are on a surface of the first transistor die, and wherein each of the first and second wire bonds is coupled to multiple of the respective bond pads.

### Claim 14 (depends on 1)

The transistor amplifier package of claim 1, wherein the first and second wire bonds are separated from one another by less than 5 mils.

### Claim 15 (depends on 14)

The transistor amplifier package of claim 14, wherein, at a cross point between the first and second wire bonds, the first and second wire bonds are separated from one another by about 2 mils or less.

### Claim 16 (depends on 15)

The transistor amplifier package of claim 15, wherein respective loop heights of the first and second wire bonds from the base are at least a height of the one or more transistor dies from the base.

### Claim 17 (depends on 1)

The transistor amplifier package of claim 1, wherein respective loop heights of the first and second wire bonds from the base are different.

### Claim 18 (depends on 1)

The transistor amplifier package of claim 1, wherein the one or more transistor dies comprise a gallium nitride-based high electron mobility transistor (HEMT).

### Claim 19 (depends on 1)

The transistor amplifier package of claim 1, wherein the one or more transistor dies comprise a silicon-based laterally diffused metal oxide semiconductor (LDMOS) transistor.

### Claim 20 (depends on 1)

The transistor amplifier package of claim 1, wherein the one or more transistor dies are configured to operate in at least a portion of one or more of the 0.6-1 GHz, 1.4-1.6 GHz, 1.7-1.9 GHz, 1.8-2.2 GHz, 2.3-2.7 GHz, 3.3-4.2 GHz, 4.4-5.0 GHz, or 5.1-6.0 GHz frequency bands.

### Claim 21 (depends on 1)

The transistor amplifier package of claim 1, wherein the one or more transistor dies are configured to operate at frequencies above 10 GHz.

### Claim 22 (depends on 1)

The transistor amplifier package of claim 1, further comprising:
a housing comprising a ceramic lid that defines an air cavity around the one or more transistor dies.

### Claim 23 (depends on 1)

The transistor amplifier package of claim 1, further comprising:
a housing comprising a plastic overmold that encapsulates the one or more transistor dies.

### Claim 24

A transistor amplifier package, comprising:
a base;
one or more transistor dies on the base;
first and second leads coupled to the one or more transistor dies, wherein the first and second leads define respective radio frequency (RF) signal paths; and
an isolation structure between the respective RF signal paths, the isolation structure comprising first and second wire bonds that are separated from one another by less than about 5 mils.

### Claim at position 25

-31. (canceled)

### Claim 32

A transistor amplifier package, comprising:
a base;
one or more transistor dies on the base;
first and second leads coupled to the one or more transistor dies, wherein the first and second leads define respective radio frequency (RF) signal paths; and
an isolation structure between the respective RF signal paths, the isolation structure comprising first and second wire bonds in a non-linear configuration coupled to the base and/or to the one or more transistor dies, wherein the base is free of a ground connection lead.

### Claim at position 27

-41. (canceled)

### Claim 42

A transistor amplifier package, comprising:
a base;
a transistor die on the base;
input and output leads coupled to the transistor die, wherein the input and output leads define input and output radio frequency (RF) signal paths, respectively, of a RF amplifier path; and
an isolation structure between the input and output RF signal paths, the isolation structure comprising first and second wire bonds coupled to the base and/or to respective bond pads of the transistor die.

### Claim at position 29

-46. (canceled)