# US 2022/0037375 A1 · Method of manufacturing flexible array substrate, flexible array substrate, and flexible display device

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- Number: US 2022/0037375 A1
- Document ID: US20220037375A1
- Status: Published application
- Kind: A1
- Application number: 16/615,135
- Filed: 2019-07-22
- Published: 2022-02-03
- Earliest claimed: 2019-07-10
- Assignees: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicants: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Inventors: Zhuhui LI
- Web page: https://patentgrep.com/patent/US20220037375A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- G09F 9/301: {flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED}
- H10D 86/021: {of multiple TFTs}
- H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies}
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/443: {adapted for preventing breakage, peeling or short circuiting}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS

## Abstract

A method of manufacturing a flexible array substrate, a flexible array substrate, and a flexible display device are disclosed. The method of manufacturing the flexible array substrate is implemented by using silver nanowire to form an electrically conductive pattern on a flexible substrate. In this manner, using the silver nanowire to replace metal or indium tin oxide as conventionally used to form the electrically conductive pattern can reduce trace resistance, increase panel transmittance, improve bending resistance of the flexible array substrate, avoid line breaks in products, improve production yield, and reduce manufacturing costs of products.

## Claims

### Claim 1

A method of manufacturing a flexible array substrate, comprising:
forming, using a silver nanowire material, an electrically conductive pattern on a flexible substrate.

### Claim 2 (depends on 1)

The method of manufacturing the flexible array substrate of claim 1, wherein the electrically conductive pattern comprises a gate electrode, a source electrode, and a drain electrode; and
wherein the forming, using a silver nanowire material, an electrically conductive pattern on a flexible substrate comprises:
step S1, forming a first silver nanowire layer on the flexible substrate;
step S2, forming, by patterning the first silver nanowire layer, the gate electrode;
step S3, forming a gate insulating layer on the flexible substrate and the gate electrode;
step S4, forming a semiconductor layer corresponding to the gate electrode on the gate insulating layer;
step S5, forming a second silver nanowire layer on the gate insulating layer; and
step S6, forming, by patterning the second silver nanowire layer, the source electrode and the drain electrode spaced apart from each other, wherein the source electrode and the drain electrode are in contact with two ends of the semiconductor layer.

### Claim 3 (depends on 2)

The method of manufacturing the flexible array substrate of claim 2, wherein the electrically conductive pattern further comprises a pixel electrode; and
wherein the forming, using a silver nanowire material, an electrically conductive pattern on a flexible substrate further comprises:
step S7, forming a passivation layer and a via hole on the gate insulating layer, the semiconductor layer, the source electrode, and the drain electrode, wherein the via hole extends through the passivation layer and exposes part of the drain electrode;
step S8, forming a third silver nanowire layer on the passivation layer; and
step S9, obtaining, by patterning the third silver nanowire layer, the pixel electrode, wherein the pixel electrode contacts the drain electrode through the via hole.

### Claim 4 (depends on 2)

The method of manufacturing the flexible array substrate of claim 2, wherein step S1 comprises coating the flexible substrate with a first silver nanowire film, and obtaining, by sintering the first silver nanowire film using pulsed light, the first silver nanowire layer; and
wherein step S5 comprises coating the flexible substrate with a second silver nanowire film, and obtaining, by sintering the second silver nanowire film using pulsed light, the second silver nanowire layer.

### Claim 5 (depends on 3)

The method of manufacturing the flexible array substrate of claim 3, wherein step S8 comprises coating the passivation layer with a third silver nanowire film, and obtaining, by sintering the third silver nanowire film using pulsed light, the third silver nanowire layer.

### Claim 6 (depends on 3)

The method of manufacturing the flexible array substrate of claim 3, further comprising a step of providing a rigid substrate implemented prior to step S1, and forming the flexible substrate on the rigid substrate.

### Claim 7 (depends on 6)

The method of manufacturing the flexible array substrate of claim 6, further comprising a step of stripping the flexible substrate from the rigid substrate implemented after step S9.

### Claim 8

A flexible array substrate, comprising:
a flexible substrate and an electrically conductive pattern disposed on the flexible substrate, wherein a material of the electrically conductive pattern is silver nanowire.

### Claim 9 (depends on 8)

The flexible array substrate of claim 8, wherein the electrically conductive pattern comprises a gate electrode, a source electrode, a drain electrode, and a pixel electrode;
wherein the flexible array substrate has a structure comprising the flexible substrate, the gate electrode disposed on the flexible substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer above the gate electrode, the source electrode and the drain electrode both disposed on the gate insulating layer and spaced apart from each other, a passivation layer disposed on the gate insulating layer, the semiconductor layer, the source electrode, and the drain electrode, and the pixel electrode disposed on the passivation layer, wherein the source electrode and the drain electrode are in contact with two ends of the semiconductor layer, and the pixel electrode contacts the drain electrode through a via hole extending through the passivation layer and exposing part of the drain electrode.

### Claim 10

A flexible display device, comprising:
a flexible array substrate, wherein the flexible array substrate comprises a flexible substrate and an electrically conductive pattern disposed on the flexible substrate, wherein a material of the electrically conductive pattern is silver nanowire.

### Claim 11 (depends on 10)

The flexible display device of claim 10, wherein the electrically conductive pattern comprises a gate electrode, a source electrode, a drain electrode, and a pixel electrode;
wherein the flexible array substrate has a structure comprising the flexible substrate, the gate electrode disposed on the flexible substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer above the gate electrode, the source electrode and the drain electrode both disposed on the gate insulating layer and spaced apart from each other, a passivation layer and the pixel electrode disposed on the gate insulating layer, the semiconductor layer, the source electrode, and the drain electrode, wherein the source electrode and the drain electrode are in contact with two ends of the semiconductor layer, and the pixel electrode contacts the drain electrode through a via hole extending through the passivation layer and exposing part of the drain electrode.