# US 2022/0037366 A1 · Manufacturing method for carbon nanotube conductive film, display panel and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0037366 A1 - Document ID: US20220037366A1 - Status: Published application - Kind: A1 - Application number: 17/325,192 - Filed: 2021-05-19 - Published: 2022-02-03 - Earliest claimed: 2020-07-29 - Assignees: Beihai Hkc Optoelectronics Technology Co., Ltd.; Hkc Corporation Limited - Applicants: Beihai HKC Optoelectronics Technology Co., Ltd.; HKC Corporation Limited - Inventors: Yuming XIA; En-Tsung CHO; Haijiang YUAN - Web page: https://patentgrep.com/patent/US20220037366A1 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - G09G 3/20: for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix {no fixed position being assigned to or needed to be assigned to the individual characters or partial characters} - H10D 86/021: {of multiple TFTs} - H10D 86/441: {Interconnections, e.g. scanning lines} - G09G 3/035: {for flexible display surfaces} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) ## Abstract The present application discloses a manufacturing method for a carbon nanotube conductive film, a display panel and a display device. The manufacturing method for the carbon nanotube conductive film includes steps of: forming a mesoporous silica; depositing a catalyst layer in a channel of the mesoporous silica by atomic layer deposition; manufacturing the mesoporous silica with the catalyst layer deposited in the channel into a mesoporous silica film; introducing a carbon matrix precursor into the channel of the mesoporous silica film by chemical vapor deposition, and reacting under the catalysis of the catalyst layer to form a carbon nanotube film; and removing the mesoporous silica and the catalyst layer from the carbon nanotube film to form the transparent carbon nanotube conductive film. ## Claims ### Claim 1 A manufacturing method for a carbon nanotube conductive film, comprising steps of: forming a mesoporous silica; depositing a catalyst layer in a channel of the mesoporous silica by atomic layer deposition; manufacturing the mesoporous silica with the catalyst layer deposited in the channel into a mesoporous silica film; introducing a carbon matrix precursor into the channel of the mesoporous silica film by chemical vapor deposition, and reacting under the catalysis of the catalyst layer to form a carbon nanotube film; and removing the mesoporous silica and the catalyst layer from the carbon nanotube film to form the transparent carbon nanotube conductive film. ### Claim 2 (depends on 1) The manufacturing method for a carbon nanotube conductive film according to claim 1, wherein the step of forming a mesoporous silica comprises substeps of: dissolving a triblock copolymer in deionized water to form a first mixture; adding a hydrochloric acid or sulfuric acid solution to the first mixture to form a second mixture with a pH value of 3 to 6; adding tetraethyl orthosilicate to the second mixture for reaction to form a third mixture; placing the third mixture in a reaction vessel for full reaction to form a fourth mixture; and drying and calcining the fourth mixture to form a solid mesoporous silica. ### Claim 3 (depends on 2) The manufacturing method for a carbon nanotube conductive film according to claim 2, wherein the triblock copolymer comprises P123. ### Claim 4 (depends on 2) The manufacturing method for a carbon nanotube conductive film according to claim 2, wherein the step of placing the third mixture in a reaction vessel for full reaction to form a fourth mixture comprises: placing the third mixture in a high pressure reactor, heating to 100-150° C., holding for 12-24 h, and naturally cooling to room temperature to give the fourth mixture. ### Claim 5 (depends on 2) The manufacturing method for a carbon nanotube conductive film according to claim 2, wherein the step of drying and calcining the fourth mixture to form a solid mesoporous silica comprises: calcining the fourth mixture in air at 400-600° C. for 2-5 h after leaching, washing and drying to give a white mesoporous silica powder. ### Claim 6 (depends on 2) The manufacturing method for a carbon nanotube conductive film according to claim 2, wherein the step of drying and calcining the fourth mixture to form a solid mesoporous silica comprises substeps of: drying and calcining the fourth mixture to form a solid mesoporous silica with a pore diameter between 2 mu and 10 nm. ### Claim 7 (depends on 1) The manufacturing method for a carbon nanotube conductive film according to claim 1, wherein the step of depositing a catalyst layer in a channel of the mesoporous silica by atomic layer deposition comprises substeps of: placing the mesoporous silica in an atomic layer deposition reaction chamber, and then introducing a catalyst layer gas-phase precursor; purging with an inert gas; introducing a reducing gas; continuously purging with an inert gas; and repeating the above steps to deposit the catalyst layer in the channel of the mesoporous silica. ### Claim 8 (depends on 7) The manufacturing method for a carbon nanotube conductive film according to claim 7, wherein the catalyst layer gas-phase precursor is gas-phase nickelocene, and the catalyst layer is a metallic nickel catalyst layer. ### Claim 9 (depends on 8) The manufacturing method for a carbon nanotube conductive film according to claim 8, wherein the step of placing the mesoporous silica in an atomic layer deposition reaction chamber and then introducing a catalyst layer gas-phase precursor comprises introducing the nickelocene into the reaction chamber for 0.02 s, and keeping the nickelocene gas in the reaction chamber for 10 s: the step of purging with an inert gas comprises purging with argon for 5 s to remove the nickelocene gas in the reaction chamber; the step of introducing a reducing gas comprises introducing hydrogen into the reaction chamber for 0.03 s, and keeping the hydrogen in the reaction chamber for 10 s after the introduction of the hydrogen; and the step of continuously purging with an inert gas comprises purging with argon for 10 s to remove the hydrogen in the reaction chamber. ### Claim 10 (depends on 7) The manufacturing method for a carbon nanotube conductive film according to claim 7, wherein the step of repeating the above steps to deposit the catalyst layer in the channel of the mesoporous silica comprises repeating for 50 times. ### Claim 11 (depends on 7) The manufacturing method for a carbon nanotube conductive film according to claim 7, wherein the catalyst layer gas-phase precursor is an iron precursor, and the catalyst layer is a metallic iron catalyst layer. ### Claim 12 (depends on 1) The manufacturing method for a carbon nanotube conductive film according to claim 1, wherein the step of manufacturing the mesoporous silica with the catalyst layer deposited in the channel into a mesoporous silica film comprises substeps of: adding the mesoporous silica with the catalyst layer deposited in the channel to an organic alcohol solution to give a fifth mixture; adding an adhesive to the fifth mixture to enable the fifth mixture to be viscous; and dispersing the viscous fifth mixture uniformly, and then pressing on a tablet press to form the mesoporous silica film. ### Claim 13 (depends on 12) The manufacturing method for a carbon nanotube conductive film according to claim 12, wherein weighing 3-5 g of the mesoporous silica deposited with the catalyst layer, adding 10-50 mL of alcohol solution to form a fifth mixture, then adding 2-8 mL of PTFE to enable the fifth mixture to be viscous, dispersing the mixture uniformly, and then pressing on the tablet press to form the film. ### Claim 14 (depends on 1) The manufacturing method for a carbon nanotube conductive film according to claim 1, wherein the step of introducing a carbon matrix precursor into the channel of the mesoporous silica film by chemical vapor deposition, and reacting under the catalysis of the catalyst layer to form a carbon nanotube film comprises substeps of: placing the mesoporous silica film in a chemical vapor deposition chamber, then introducing a gas mixture of argon and hydrogen, and heating; and introducing the carbon matrix precursor into the chemical vapor deposition chamber, and cooling to give the carbon nanotube film containing single-walled carbon nanotubes. ### Claim 15 (depends on 14) The manufacturing method for a carbon nanotube conductive film according to claim 14, wherein the flow ratio of argon to hydrogen is between 20:1 and 10:1. ### Claim 16 (depends on 14) The manufacturing method for a carbon nanotube conductive film according to claim 14, wherein placing the mesoporous silica film in a CVD chamber, introducing a gas mixture of argon and hydrogen, heating the CVD chamber to 700-1000° C., then introducing the carbon matrix precursor for growth for 60-300 s, and cooling the CVD chamber to give the carbon nanotube film. ### Claim 17 (depends on 1) The manufacturing method for a carbon nanotube conductive film according to claim 1, wherein the step of removing the mesoporous silica and the catalyst layer from the carbon nanotube film to form the transparent carbon nanotube conductive film comprises substeps of: heating and annealing the carbon nanotube film; placing the carbon nanotube film subjected to heating and annealing in a hydrofluoric acid or sodium hydroxide solution, to give a carbon nanotube film with the mesoporous silica removed; and placing the carbon nanotube film with the mesoporous silica removed in an aluminum chloride solution or ferric chloride solution, to give a transparent carbon nanotube conductive film with the catalyst layer removed. ### Claim 18 (depends on 1) The manufacturing method for a carbon nanotube conductive film according to claim 1, wherein the step of removing the mesoporous silica and the catalyst layer from the carbon nanotube film to form the transparent carbon nanotube conductive film comprises: placing the carbon nanotube film in an aluminum chloride solution or ferric chloride solution to remove the catalyst layer, then placing the carbon nanotube film with the catalyst layer removed in a hydrofluoric acid or sodium hydroxide solution to remove the mesoporous silica, and finally giving the transparent carbon nanotube conductive film. ### Claim 19 A display panel, comprising an active switch, wherein the active switch comprises: a substrate; a gate metal layer, disposed on the substrate; a gate insulating layer, disposed on the gate metal layer; an active layer, disposed on the gate insulating layer; an ohmic contact layer, disposed on the active layer; a source/drain metal layer, disposed on the ohmic contact layer; a passivation layer, disposed on the source/drain metal layer; and a carbon nanotube conductive film, disposed on the passivation layer and connected to the source/drain metal layer through a via hole in the passivation layer. ### Claim 20 A display device, comprising a display panel and a drive circuit configured for driving the display panel, wherein the display panel comprises an active switch, the active switch comprises: a substrate; a gate metal layer, disposed on the substrate; a gate insulating layer, disposed on the gate metal layer; an active layer, disposed on the gate insulating layer; an ohmic contact layer, disposed on the active layer; a source/drain metal layer, disposed on the ohmic contact layer; a passivation layer, disposed on the source/drain metal layer; and a carbon nanotube conductive film, disposed on the passivation layer and connected to the source/drain metal layer through a via hole in the passivation layer.