# US 2022/0037221 A1 · Semiconductor encapsulation material and semiconductor device

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- Number: US 2022/0037221 A1
- Document ID: US20220037221A1
- Status: Published application
- Kind: A1
- Application number: 17/431,624
- Filed: 2020-02-07
- Published: 2022-02-03
- Earliest claimed: 2019-02-21
- Assignees: Panasonic Intellectual Property Management Co., Ltd.
- Applicants: Panasonic Intellectual Property Management Co., Ltd.
- Inventors: Chika ARAYAMA
- Web page: https://patentgrep.com/patent/US20220037221A1

## CPC

- H10W 74/40: characterised by their materials
- H10W 74/473: {containing a filler}
- C08G 59/621: {Phenols}
- C08K 3/22: of metals
- C08K 3/36: Silica
- C08L 63/00: Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- H10W 74/129: {forming a chip-scale package [CSP]}
- C08K 3/013: Fillers, pigments or reinforcing additives
- C08K 2003/2224: {Magnesium hydroxide}
- C08K 2003/2227: {of aluminium}
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/014: {using batch processing}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09)
- C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06)

## Abstract

A semiconductor encapsulation material is used to fabricate a semiconductor device. The semiconductor device includes a semiconductor chip and an encapsulating portion. The encapsulating portion is made of a cured product of the semiconductor encapsulation material. The encapsulating portion encapsulates the semiconductor chip. A stress index (SI), given by the following Formula (1), of the semiconductor encapsulation material is equal to or more than 8500. If a volume of the semiconductor chip is represented by Vc and a total volume of the semiconductor chip and the encapsulating portion is represented by Va, the volume Vc and the total volume Va satisfy the following Formula (2). In Formula (1), E′ (T) represents a storage modulus, CTE (T) represents a coefficient of thermal expansion, and Mold temp. represents a molding temperature. SI = ∫ 35 ⁢ ° ⁢ ⁢ C . Moldtemp . ⁢ [ E ′ ⁡ ( T ) × CTE ⁡ ( T ) ] ⁢ dT ( 1 ) Vc Va ≧ 0.3 . ( 2 )

## Claims

### Claim 1

A semiconductor encapsulation material used to fabricate a semiconductor device, the semiconductor device comprising: a semiconductor chip; and an encapsulating portion made of a cured product of the semiconductor encapsulation material and encapsulating the semiconductor chip,
a stress index (SI), given by the following Formula (1), of the semiconductor encapsulation material being equal to or more than 8500:
SI=∫35° C.Mold temp.[E′(T)×CTE(T)]dT (1)
where E′ (T) represents a storage modulus, CTE (T) represents a coefficient of thermal expansion, and Mold temp. represents a molding temperature,
when a volume of the semiconductor chip is represented by Vc and a total volume of the semiconductor chip and the encapsulating portion is represented by Va, the volume Vc and the total volume Va satisfying the following Formula (2):
Vc
Va
≧
0.3
.
(
2
)

### Claim 2 (depends on 1)

The semiconductor encapsulation material of claim 1, wherein
a flexural modulus of a cured product of the semiconductor encapsulation material at 260° C. falls within a range from 0.1 GPa to 0.9 GPa.

### Claim 3 (depends on 1)

The semiconductor encapsulation material of claim 1, wherein
a mold shrinkage factor of a cured product of the semiconductor encapsulation material falls within a range from 0.35% to 1.3%.

### Claim 4 (depends on 1)

The semiconductor encapsulation material of claim 1, wherein
the semiconductor encapsulation material contains an inorganic filler, and
content of the inorganic filler falls within a range from 55% by mass to 85% by mass with respect to total mass of the semiconductor encapsulation material.

### Claim 5 (depends on 4)

The semiconductor encapsulation material of claim 4, wherein
the inorganic filler includes magnesium hydroxide and/or aluminum hydroxide, and
content of the magnesium hydroxide and/or aluminum hydroxide is 10% by mass or more with respect to the total mass of the semiconductor encapsulation material.

### Claim 6 (depends on 1)

A semiconductor device comprising: a semiconductor chip; and an encapsulating portion encapsulating the semiconductor chip,
the encapsulating portion being made of a cured product of the semiconductor encapsulation material of claim 1.