# US 2022/0035249 A1 · Extreme ultraviolet light generation system and electronic device manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0035249 A1 - Document ID: US20220035249A1 - Status: Published application - Kind: A1 - Application number: 17/337,560 - Filed: 2021-06-03 - Published: 2022-02-03 - Earliest claimed: 2020-07-30 - Assignees: Gigaphoton Inc. - Applicants: Gigaphoton Inc. - Inventors: Takanari KOBAYASHI; Hirokazu HOSODA; Yoshiyuki HONDA - Web page: https://patentgrep.com/patent/US20220035249A1 ## CPC - G03F 7/2006: {using coherent light; using polarised light} - G03F 7/70025: {by lasers} - H05G 2/0084: {Control of the laser beam} - H10P 76/2042: {using lasers} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H05G: X-RAY TECHNIQUE (investigating or analysing materials by the use of X-rays G01N23/00; apparatus for X-ray photography G03B42/02; X-ray tubes H01J35/00; TV systems having X-ray input H04N5/321) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract An extreme ultraviolet light generation system may include a laser system emitting first prepulse laser light, second prepulse laser light, and main pulse laser light in this order; a chamber including at least one window for introducing, into the chamber, the first prepulse laser light, the second prepulse laser light, and the main pulse laser light; a target supply unit supplying a target to a predetermined region in the chamber; and a processor controlling the laser system to irradiate the target with the first prepulse laser light, irradiate the target, having been irradiated with the first prepulse laser light, with the second prepulse laser light having a pulse time width longer than a pulse time width of the main pulse laser light, and irradiate the target, having been irradiated with the second prepulse laser light, with the main pulse laser light temporally separated from the second prepulse laser light. ## Claims ### Claim 1 An extreme ultraviolet light generation system, comprising: a laser system configured to emit first prepulse laser light, second prepulse laser light, and main pulse laser light in this order; a chamber including at least one window for introducing, into the chamber, the first prepulse laser light, the second prepulse laser light, and the main pulse laser light; a target supply unit configured to supply a target to a predetermined region in the chamber; and a processor configured to control the laser system so as to irradiate the target with the first prepulse laser light, irradiate the target, having been irradiated with the first prepulse laser light, with the second prepulse laser light having a pulse time width longer than a pulse time width of the main pulse laser light, and irradiate the target, having been irradiated with the second prepulse laser light, with the main pulse laser light temporally separated from the second prepulse laser light. ### Claim 2 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein the pulse time width of the second prepulse laser light is 10 ns or more and 80 ns or less. ### Claim 3 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein the pulse time width of the second prepulse laser light is 30 ns or more and 50 ns or less. ### Claim 4 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein fluence of the second prepulse laser light at a position of the target when the target is irradiated with the second prepulse laser light is 1.5 J/cm2 or more and 4.4 J/cm2 or less. ### Claim 5 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein fluence of the second prepulse laser light at a position of the target when the target is irradiated with the second prepulse laser light is 2.5 J/cm2 or more and 3.4 J/cm2 or less. ### Claim 6 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein the pulse time width of the first prepulse laser light is less than 1 ns, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is 2.0 J/cm2 or more and 20 J/cm2 or less. ### Claim 7 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein the pulse time width of the first prepulse laser light is less than 1 ns, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is 7.5 J/cm2 or more and 15.1 J/cm2 or less. ### Claim 8 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein the pulse time width of the first prepulse laser light is 1 ns or more, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is 60 J/cm2 or more and 78 J/cm2 or less. ### Claim 9 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein a dimension of the target at timing of irradiating the target with the second prepulse laser light is 15% or more and 64% or less of a dimension of a beam cross section of the second prepulse laser light at a position of the target. ### Claim 10 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein a dimension of the target at timing of irradiating the target with the second prepulse laser light is 27% or more and 50% or less of a dimension of a beam cross section of the second prepulse laser light at a position of the target. ### Claim 11 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein the laser system includes a first prepulse laser configured to emit the first prepulse laser light, a second prepulse laser configured to emit the second prepulse laser light, an optical pulse stretcher arranged on an optical path of the second prepulse laser light, and a main pulse laser configured to emit the main pulse laser light. ### Claim 12 (depends on 1) The extreme ultraviolet light generation system according to claim 1, wherein the laser system includes a first laser device configured to emit the first prepulse laser light, and a second laser device configured to emit the second prepulse laser light and the main pulse laser light, and the second laser device includes CO2 gas laser amplifiers, a first master oscillator configured to emit first seed light having a first amplification wavelength among a plurality of amplification wavelengths of the CO2 gas laser amplifiers, a second master oscillator configured to emit second seed light having a second amplification wavelength among the plurality of amplification wavelengths and having a pulse time width shorter than that of the first seed light, and a beam combiner configured to cause the first seed light and the second seed light to enter the CO2 gas laser amplifier. ### Claim 13 An electronic device manufacturing method, comprising: generating extreme ultraviolet light using an extreme ultraviolet light generation system; emitting the extreme ultraviolet light to an exposure apparatus; and exposing a photosensitive substrate to the extreme ultraviolet light in the exposure apparatus to manufacture an electronic device, the extreme ultraviolet light generation system including a laser system configured to emit first prepulse laser light, second prepulse laser light, and main pulse laser light in this order; a chamber including at least one window for introducing, into the chamber, the first prepulse laser light, the second prepulse laser light, and the main pulse laser light; a target supply unit configured to supply a target to a predetermined region in the chamber; and a processor configured to control the laser system so as to irradiate the target with the first prepulse laser light, irradiate the target, having been irradiated with the first prepulse laser light, with the second prepulse laser light having a pulse time width longer than a pulse time width of the main pulse laser light, and irradiate the target, having been irradiated with the second prepulse laser light, with the main pulse laser light temporally separated from the second prepulse laser light. ### Claim 14 (depends on 13) The electronic device manufacturing method according to claim 13, wherein the pulse time width of the second prepulse laser light is 10 ns or more and 80 ns or less. ### Claim 15 (depends on 13) The electronic device manufacturing method according to claim 13, wherein fluence of the second prepulse laser light at a position of the target when the target is irradiated with the second prepulse laser light is 1.5 J/cm2 or more and 4.4 J/cm2 or less. ### Claim 16 (depends on 13) The electronic device manufacturing method according to claim 13, wherein the pulse time width of the first prepulse laser light is less than 1 ns, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is 2.0 J/cm2 or more and 20 J/cm2 or less. ### Claim 17 (depends on 13) The electronic device manufacturing method according to claim 13, wherein the pulse time width of the first prepulse laser light is 1 ns or more, and fluence of the first prepulse laser light at a position of the target when the target is irradiated with the first prepulse laser light is 60 J/cm2 or more and 78 J/cm2 or less. ### Claim 18 (depends on 13) The electronic device manufacturing method according to claim 13, wherein a dimension of the target at timing of irradiating the target with the second prepulse laser light is 15% or more and 64% or less of a dimension of a beam cross section of the second prepulse laser light at a position of the target. ### Claim 19 (depends on 13) The electronic device manufacturing method according to claim 13, wherein the laser system includes a first prepulse laser configured to emit the first prepulse laser light, a second prepulse laser configured to emit the second prepulse laser light, an optical pulse stretcher arranged on an optical path of the second prepulse laser light, and a main pulse laser configured to emit the main pulse laser light. ### Claim 20 (depends on 13) The electronic device manufacturing method according to claim 13, wherein the laser system includes a first laser device configured to emit the first prepulse laser light, and a second laser device configured to emit the second prepulse laser light and the main pulse laser light, and the second laser device includes CO2 gas laser amplifiers, a first master oscillator configured to emit first seed light having a first amplification wavelength among a plurality of amplification wavelengths of the CO2 gas laser amplifiers, a second master oscillator configured to emit second seed light having a second amplification wavelength among the plurality of amplification wavelengths and having a pulse time width shorter than that of the first seed light, and a beam combiner configured to cause the first seed light and the second seed light to enter the CO2 gas laser amplifier.