# US 2022/0035243 A1 · Original plate manufacturing method, drawing data creation method, and pattern defect repairing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0035243 A1 - Document ID: US20220035243A1 - Status: Published application - Kind: A1 - Application number: 17/190,078 - Filed: 2021-03-02 - Published: 2022-02-03 - Earliest claimed: 2020-08-03 - Applicants: Kioxia Corporation - Inventors: Ryoji YOSHIKAWA; Masato NAKA - Web page: https://patentgrep.com/patent/US20220035243A1 ## CPC - G03F 1/72: Repair or correction of mask defects - G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging - G03F 1/76: Patterning of masks by imaging - G03F 1/84: Inspecting - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract An original plate manufacturing method includes preparing first design data and second design data from a predetermined pattern to be formed on a target object. The first design data corresponds to a first design pattern, and the second design data corresponds to a second design pattern. The first and second design patterns are complementary portions of the predetermined pattern. The first design pattern is then formed on the target object based on the first design data. An inspection is performed on the target object on which the first design pattern has been formed. Third design data is generated based on a result of the inspection. The second design data is then adjusted based on the third design data to generate corrected second design data. The target object is then patterned again based on the corrected second design data. ## Claims ### Claim 1 An original plate manufacturing method, comprising: preparing first design data and second design data from a predetermined pattern to be formed on a target object, the first design data corresponding to a first design pattern and the second design data corresponding to a second design pattern, the first and second design patterns being complementary portions of the predetermined pattern; forming the first design pattern on the target object based on the first design data; performing an inspection on the target object on which the first design pattern has been formed; generating third design data based on a result of the inspection; adjusting the second design data based on the third design data to generate corrected second design data; and patterning the target object on which the first design pattern has been formed based on the corrected second design data. ### Claim 2 (depends on 1) The original plate manufacturing method according to claim 1, wherein the forming of the first design pattern on the target object based on the first design data includes: forming a first photoresist film on the target object; forming a first mask by selectively irradiating the first photoresist film with a laser beam or a charged particle beam based on the first design data; and etching the target object using the first mask as an etch mask. ### Claim 3 (depends on 2) The original plate manufacturing method according to claim 2, wherein the patterning of the target object on which the first design pattern has been formed based on the corrected second design data includes: forming a second photoresist film on the target object on which the first design pattern has been formed; forming a second mask by selectively irradiating the second photoresist film with a laser beam or a charged particle beam based on the corrected second design data; and etching the target object using the second mask as an etch mask. ### Claim 4 (depends on 1) The original plate manufacturing method according to claim 1, wherein the patterning of the target object on which the first design pattern has been formed based on the corrected second design data includes: forming a photoresist film on the target object on which the first design pattern has been formed; forming a mask by selectively irradiating the photoresist film with a laser beam or a charged particle beam based on the corrected second design data; and etching the target object using the mask as an etch mask. ### Claim 5 (depends on 1) The original plate manufacturing method according to claim 1, wherein the target object is a hard mask film formed on a surface of a substrate that transmits ultraviolet light. ### Claim 6 (depends on 5) The original plate manufacturing method according to claim 5, further comprising: etching into the substrate using the hard mask film as an etch mask. ### Claim 7 (depends on 6) The original plate manufacturing method according to claim 6, further comprising: removing the hard mask film from the substrate after the etching into the substrate. ### Claim 8 (depends on 1) The original plate manufacturing method according to claim 1, wherein forming the first design pattern on the target object based on the first design data includes etching the target object. ### Claim 9 (depends on 1) The original plate manufacturing method according to claim 1, wherein the adjusting of the second design data includes adjusting portions of the second design data to compensate for proximity effects related to the addition of the third design pattern. ### Claim 10 (depends on 9) The original plate manufacturing method according to claim 9, wherein adjusting portions of the second design data to compensate for proximity effects related to the addition of the third design pattern comprises reducing a dimension of a region in the second design data that is irradiated with a laser beam or a charged particle beam. ### Claim 11 (depends on 9) The original plate manufacturing method according to claim 9, wherein adjusting portions of the second design data to compensate for proximity effects related to the addition of the third design pattern comprises reducing an irradiation dose of a laser beam or a charged particle beam. ### Claim 12 A pattern defect repairing method, comprising: preparing first design data and second design data from a predetermined pattern to be formed on a target object, the first design data corresponding to a first design pattern and the second design data corresponding to a second design pattern, the first and second design patterns being complementary portions of the predetermined pattern; drawing the first design pattern by irradiating a first photoresist film formed on a target object with a laser beam or a charged particle beam based on the first design data; forming the first design pattern on the target object using the first photoresist film in which the first design pattern has been drawn; performing an inspection on the target object on which the first design pattern has been formed; generating third design data based on a result of the inspection; adjusting the second design data based on the third design data to generate corrected second design data; and irradiating a second photoresist film with the laser beam or the charged particle beam based on the corrected second design data, the second photoresist film being formed on the target object on which the first design pattern has been formed. ### Claim 13 (depends on 12) The pattern defect repairing method according to claim 12, wherein the target object is a substrate transparent to ultraviolet light. ### Claim 14 (depends on 12) The pattern defect repairing method according to claim 12, wherein the target object is a metallic film on a substrate transparent to ultraviolet light. ### Claim 15 (depends on 12) The pattern defect repairing method according to claim 12, wherein the first design pattern and the second design pattern each comprise line-space patterns having the same pitch, the second design pattern being positionally offset from the first design pattern by one-half the pitch. ### Claim 16 (depends on 12) The pattern defect repairing method according to claim 12, wherein the adjusting of the second design data includes adjusting portions of the second design data to compensate for proximity effects related to the addition of the third design pattern. ### Claim 17 A drawing data creation method, comprising: preparing first design data and second design data from a predetermined pattern, the first design data corresponding to a first design pattern and the second design data corresponding to a second design pattern, the first and second design patterns being complementary portions of the predetermined pattern; generating third design data based on an inspection of the formed first design pattern; and adjusting the second design data based on the third design data. ### Claim 18 (depends on 17) The drawing data creation method according to claim 17, wherein the adjusting of the second design data includes adjusting portions of the second design data to compensate for proximity effects related to the addition of the third design pattern. ### Claim 19 (depends on 18) The drawing data creation method according to claim 18, wherein adjusting portions of the second design data to compensate for proximity effects related to the addition of the third design pattern comprises reducing a dimension of a region in the second design data that is irradiated with a laser beam or a charged particle beam. ### Claim 20 (depends on 18) The drawing data creation method according to claim 18, wherein adjusting portions of the second design data to compensate for proximity effects related to the addition of the third design pattern comprises reducing an irradiation dose of a laser beam or a charged particle beam.