# US 2022/0034835 A1 · Methods for analyzing a gas mixture and gas sensor

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- Number: US 2022/0034835 A1
- Document ID: US20220034835A1
- Status: Published application
- Kind: A1
- Application number: 17/312,270
- Filed: 2019-12-06
- Published: 2022-02-03
- Earliest claimed: 2018-12-14
- Assignees: Robert Bosch GmbH
- Applicants: Robert Bosch GmbH
- Inventors: Philipp Nolte; Katrin Luckert; Maria Martinez Prada
- Web page: https://patentgrep.com/patent/US20220034835A1

## CPC

- G01N 27/124: {varying the temperature, e.g. in a cyclic manner}
- G01N 33/0044: {Sulphides, e.g. H2S}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A method for analyzing a gas mixture, in which a layer which is configured for the adsorption and/or absorption of components of the gas mixture is exposed to the gas mixture. The method includes cooling the layer from a first to a second temperature and heating the layer from the second to a third temperature. While the layer has the first, second, and third temperature, at least one electrical resistance value of the layer is measured. A method is described in which a first and second layer are exposed to the gas mixture. The first layer is cooled from a first to a second temperature and the second layer is cooled from a third to a fourth temperature. While the first layer has the first and second temperature and the second layer has the third and fourth temperature, at least one electrical resistance value of the respective layer is measured.

## Claims

### Claim at position 1

1-15. (canceled)

### Claim 16

A method for analyzing a gas mixture, in which a layer, which is configured for the adsorption and/or absorption of components of the gas mixture, is exposed to the gas mixture, the method comprising the following steps:
measuring at least one electrical resistance value of the layer, while the layer has a first temperature;
reducing a temperature of the layer from the first temperature to a second temperature;
measuring at least one electrical resistance value of the layer while the layer has the second temperature;
increasing the temperature of the layer from the second temperature to a third temperature;
measuring at least one electrical resistance value of the layer, immediately after reaching the third temperature; and
analyzing the components of the gas mixture based on the measured electrical resistance values.

### Claim 17 (depends on 16)

The method as recited in claim 16, further comprising the following steps:
reducing the temperature of the layer from the third temperature to a fourth temperature; and
measuring at least one electrical resistance value of the layer while the layer has the fourth temperature;
wherein the first temperature differs from the third temperature and/or the second temperature differs from the fourth temperature.

### Claim 18 (depends on 17)

The method as recited in claim 17, further comprising the following step: increasing the temperature of the layer from the fourth temperature to the first temperature.

### Claim 19 (depends on 18)

The method as recited in claim 18, wherein the method is carried out periodically with a period length in a range from 20 seconds to 120 seconds.

### Claim 20

A method for analyzing a gas mixture, in which a first layer and a second layer, which are each configured for the adsorption and/or absorption of components of the gas mixture and are thermally decoupled from one another, are exposed to the gas mixture, the method comprising the following steps:
measuring at least one electrical resistance value of the first layer, while the first layer has a first temperature;
reducing a temperature of the first layer from the first temperature to a second temperature;
measuring at least one electrical resistance value of the first layer while the first layer has the second temperature;
simultaneously measuring at least one electrical resistance value of the second layer while the second layer has a third temperature;
reducing a temperature of the second layer from the third temperature to a fourth temperature;
measuring at least one electrical resistance value of the second layer while the second layer has the fourth temperature; and
analyzing the components of the gas mixture based on the measured electrical resistance values;
wherein the first temperature differs from the third temperature and/or the second temperature differs from the fourth temperature.

### Claim 21 (depends on 16)

The method as recited in claim 16, wherein the at least one electrical resistance value of the layer, while the layer has the second temperature or the fourth temperature, is measured after the layer has been held for a time period in the range of 5 seconds to 30 seconds at the respective second or fourth temperature.

### Claim 22 (depends on 16)

The method as recited in claim 16, wherein the at least one electrical resistance value of the layer, while the layer has the first temperature or the third temperature, is measured after the layer has been held for a time period of at least 100 ms at the first temperature or the fourth temperature.

### Claim 23 (depends on 16)

The method as recited in claim 16, wherein the increase of the temperature of the layer from the second temperature to the third temperature and/or the increase of the temperature of the layer from the fourth temperature to the first temperature takes place within at most one second.

### Claim 24 (depends on 16)

The method as recited in claim 16, wherein the first temperature and the third temperature are each independent of one another in a range from 250° C. to 400° C.

### Claim 25 (depends on 16)

The method as recited in claim 16, wherein the second temperature and the fourth temperature are each independent of one another in a range from 20° C. to 200° C.

### Claim 26 (depends on 16)

The method as recited in claim 16, wherein the first temperature and the third temperature are equal and are in a range from 300° C. to 400° C., the second temperature is in a range from 30° C. to 100° C., and the fourth temperature is in a range from 100° C. to 180° C.

### Claim 27 (depends on 16)

The method as recited in claim 16, wherein the gas mixture contains at least two different sulfurous components.

### Claim 28

A gas sensor, which is configured to analyze a gas mixture, the gas sensor comprising:
a layer configured for adsorption and/or absorption of components of the gas mixture; and
a computer configured to ascertain a resistance of the layer;
wherein the gas sensor, for analyzing the gas mixture, is configured to:
measure at least one electrical resistance value of the layer, while the layer has a first temperature,
reduce a temperature of the layer from the first temperature to a second temperature,
measure at least one electrical resistance value of the layer while the layer has the second temperature,
increase the temperature of the layer from the second temperature to a third temperature,
measure at least one electrical resistance value of the layer immediately after reaching the third temperature, and
analyze the components of the gas mixture based on the measured electrical resistance values.

### Claim 29

A gas sensor configured to analyze a gas mixture, the gas sensor comprising:
a first layer and a second layer, which are respectively configured for adsorption and/or absorption of components of the gas mixture and are thermally decoupled from one another; and
a computer for ascertaining a resistance of the first and second layers;
wherein the gas sensor, for analyzing the gas mixture, is configured to:
measure at least one electrical resistance value of the first layer, while the first layer has a first temperature,
reduce a temperature of the first layer from the first temperature to a second temperature,
measure at least one electrical resistance value of the first layer while the first layer has the second temperature,
simultaneously measure at least one electrical resistance value of the second layer while the second layer has a third temperature,
reduce a temperature of the second layer from the third temperature to a fourth temperature,
measuring at least one electrical resistance value of the second layer while the second layer has the fourth temperature, and
analyzing the components of the gas mixture based on the measured electrical resistance values,
wherein the first temperature differs from the third temperature and/or the second temperature differs from the fourth temperature.
