# US 2022/0033965 A1 · Method for producing a component part of a cvd reactor

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- Number: US 2022/0033965 A1
- Document ID: US20220033965A1
- Status: Published application
- Kind: A1
- Application number: 17/309,452
- Filed: 2019-11-27
- Published: 2022-02-03
- Earliest claimed: 2018-11-28
- Assignees: Aixtron SE
- Applicants: Aixtron SE
- Inventors: Marcel KOLLBERG; Francisco RUDA Y WITT
- Web page: https://patentgrep.com/patent/US20220033965A1

## CPC

- C23C 16/45508: {Radial flow}
- B23K 26/362: Laser etching
- B23K 26/364: for making a groove or trench, e.g. for scribing a break initiation groove
- B23K 26/382: by boring
- B23K 26/389: {of fluid openings, e.g. nozzles, jets}
- B23K 26/402: involving non-metallic material, e.g. isolators
- C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines}
- C23C 16/4558: {Perforated rings}
- B23K 2103/50: {Inorganic materials other than metals or composite materials}
- B23K 2103/52: {Ceramics}
- B23K 2103/54: {Glass}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM

## Abstract

A component made of a quartz blank is used as a component part of a CVD reactor. At least one cavity of the component is created by selective laser etching, wherein a fluid flows through the at least one cavity. When in use, the component is heated to temperatures in excess of 500° C., and comes into contact with hydrides of the main groups IV, V or VI and/or with organometallic compounds or halogenides of elements of the main groups II, III or V.

## Claims

### Claim 1

A method for manufacturing a component of a chemical vapor deposition (CVD) reactor (1), which consists of quartz, and has at least one cavity (8′, 8″, 8″; 13, 14, 14′; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41), the method comprising etching the at least one cavity (8′, 8″, 8″; 13, 14, 14′; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41) by selective laser etching.

### Claim 2

A method of using a component produced from a quartz blank, in which at least one cavity (8′, 8″, 8″; 13, 14, 14′; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41) of the component has been generated by selective laser etching, as part of a chemical vapor deposition (CVD) reactor (1), the method comprising:
flowing a fluid through the at least one cavity (8′, 8″, 8″; 13, 14, 14′; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41);
heating the component to temperatures above 500° C.; and
exposing the component to hydrides of the IV-, V-, or VI-main group, and/or with organometallic compounds, or halogen compounds of elements of the II-, III-, or V-main group.

### Claim 3 (depends on 1)

The method of claim 1, wherein the component is one of a gas inlet unit (2), a substrate support (33), a gas outlet unit (22), a shield plate (42), a susceptor (19), a light passage plate (34), a support tube (45), a diffusion barrier (46), a support plate (44), a sheath (48), or a cover plate.

### Claim 4 (depends on 1)

The method of claim 1, wherein the at least one cavity (8′, 8″, 8″; 13, 14, 14′; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41) has a multiplicity of gas passage holes (13, 14, 14′), which extend between two surfaces of the component, and are arranged in a uniformly distributed manner on a gas outlet surface of the component.

### Claim 5 (depends on 4)

The method of claim 4, wherein each of the gas passage holes (13, 14, 14′, 37) has a diameter that is smaller than 3 mm.

### Claim 6 (depends on 4)

The method of claim 4, wherein the at least one cavity has a gas distribution chamber (8, 8′, 8″, 38) that communicates with the multiplicity of gas passage holes (13, 14, 14′, 37).

### Claim 7 (depends on 6)

The method of claim 6, wherein an inner surface of the gas distribution chamber (8, 8′, 8″, 38) is closed in a materially integral manner, except for gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38), and the gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38).

### Claim 8 (depends on 7)

The method of claim 7, wherein a free cross-sectional area of the gas distribution chamber (8, 8′, 8″, 38) extending transversely to a flow through the component is at least ten times as large as a sum of free cross-sectional areas of the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38), or a sum of the gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38).

### Claim 9 (depends on 7)

The method of claim 7, wherein the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) are not in alignment with the gas passage holes (13, 14, 14′, 37).

### Claim 10 (depends on 1)

The method of claim 1, wherein the at least one cavity is a recess (40, 40′) configured to accommodate a substrate (21) or a substrate holder (33).

### Claim 11 (depends on 1)

The method of claim 1, wherein the at least one cavity is a gas line (38, 39), which does not run in a straight line, or has one or more points of changes of direction.

### Claim 12 (depends on 1)

The method of claim 1, wherein the component is exposed to temperatures greater than 600° C.

### Claim 13

A device for distributing gas in a chemical vapor deposition (CVD) reactor, the device comprising:
a gas distribution chamber (8, 8′, 8″, 38) formed by a cavity;
a gas supply line (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38); and
a plurality of gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38),
wherein an inner surface of the gas distribution chamber (8, 8′, 8″, 38) is closed in a materially integral manner, except for the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38), and the gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38).

### Claim 14

(canceled)

### Claim 15 (depends on 2)

The method of claim 2, wherein the component is one of a gas inlet unit (2), a substrate support (33), a gas outlet unit (22), a shield plate (42), a susceptor (19), a light passage plate (34), a support tube (45), a diffusion barrier (46), a support plate (44), a sheath (48), or a cover plate.

### Claim 16 (depends on 2)

The method of claim 2, wherein the at least one cavity (8′, 8″, 8″; 13, 14, 14′; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41) has a multiplicity of gas passage holes (13, 14, 14′), which extend between two surfaces of the component, and are arranged in a uniformly distributed manner on a gas outlet surface of the component.

### Claim 17 (depends on 16)

The method of claim 16, wherein each of the gas passage holes (13, 14, 14′, 37) has a diameter that is smaller than 3 mm.

### Claim 18 (depends on 16)

The method of claim 16, wherein the at least one cavity has a gas distribution chamber (8, 8′, 8″, 38) that communicates with the multiplicity of gas passage holes (13, 14, 14′, 37).

### Claim 19 (depends on 18)

The method of claim 18, wherein an inner surface of the gas distribution chamber (8, 8′, 8″, 38) is closed in a materially integral manner, except for gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38), and the gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38).

### Claim 20 (depends on 19)

The method of claim 19, wherein a free cross-sectional area of the gas distribution chamber (8, 8′, 8″, 38) extending transversely to the fluid flow through the component is at least ten times as large as a sum of free cross-sectional areas of the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into the gas distribution chamber (8, 8′, 8″, 38), or a sum of the gas passage holes (13, 14, 14′, 37) leading out of the gas distribution chamber (8, 8′, 8″, 38).

### Claim 21 (depends on 19)

The method of claim 19, wherein the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) are not in alignment with the gas passage holes (13, 14, 14′, 37).