# US 2022/0033955 A1 · Method for producing thin film and multilayer body > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0033955 A1 - Document ID: US20220033955A1 - Status: Published application - Kind: A1 - Application number: 17/505,099 - Filed: 2021-10-19 - Published: 2022-02-03 - Earliest claimed: 2019-07-23 - Assignees: Panasonic Intellectual Property Management Co., Ltd. - Applicants: Panasonic Intellectual Property Management Co., Ltd. - Inventors: MANABU KANOU; YUJI ZENITANI; YUKI NAKATA - Web page: https://patentgrep.com/patent/US20220033955A1 ## CPC - C23C 14/088: {of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal} - B32B 9/00: Layered products comprising a {layer of a} particular substance not covered by groups B32B11/00 - B32B29/00 - B32B 18/00: Layered products essentially comprising ceramics, e.g. refractory products - C01B 3/0031: Intermetallic compounds; Metal alloys - C01B 6/02: Hydrides of transition elements; Addition complexes thereof - C01B 6/24: Hydrides containing at least two metals; Addition complexes thereof (C01B6/13 - C01B6/23 take precedence) - C01G 23/006: {Alkaline earth titanates} - C23C 14/34: Sputtering - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - H01J 37/3429: {Plural materials} - C01P 2002/34: perovskite-type (ABO3) - Y02E 60/32: Hydrogen storage - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A method for producing a thin film according to the present disclosure comprises a step of forming the thin film on a substrate using a target. The target is formed of a mixture containing a first material and a second material. The first material has a composition represented by ATiO3 (where A is at least one selected from the group consisting of Ba and Sr). The second material has a composition represented by EH2 (where E is at least one selected from the group consisting of Ti and Zr). The thin film is formed of a first oxide containing A, Ti, and O. Some of oxide ions contained in the first oxide have been replaced by hydride ions. ## Claims ### Claim 1 A method for producing a thin film, the method comprising: forming the thin film on a substrate using a target, wherein the target is formed of a mixture containing a first material and a second material, the first material has a composition represented by ATiO3 (where A is at least one selected from the group consisting of Ba and Sr), the second material has a composition represented by EH2 (where E is at least one selected from the group consisting of Ti and Zr), the thin film is formed of a first oxide containing A, Ti, and O, and some of oxide ions contained in the first oxide have been replaced by hydride ions. ### Claim 2 (depends on 1) The method according to claim 1, wherein the first oxide has a crystal structure. ### Claim 3 (depends on 2) The method according to claim 2, wherein the crystal structure is a perovskite structure. ### Claim 4 (depends on 1) The method according to claim 1, wherein the first oxide has a composition represented by AxTiO3-yHz (0.4≤x≤0.8, 0.1≤y≤1.0, 0.1≤z≤1.0). ### Claim 5 (depends on 1) The method according to claim 1, wherein the substrate is formed of at least one selected from the group consisting of Si, Ge, a metal, an amorphous substance, and a metal compound that is different from the first oxide. ### Claim 6 (depends on 5) The method according to claim 5, wherein the metal is stainless steel. ### Claim 7 (depends on 5) The method according to claim 5, wherein the amorphous substance is glass. ### Claim 8 (depends on 5) The method according to claim 5, wherein the metal compound has a higher oxidation-reduction potential than a hydride ion. ### Claim 9 (depends on 5) The method according to claim 5, wherein the metal compound is at least one selected from the group consisting of Al2O3, SnO, GaAs, and GaN. ### Claim 10 (depends on 5) The method according to claim 5, wherein the metal compound is a substance which has been doped with hydrogen by heat treatment using a reducing agent composed of a hydride. ### Claim 11 (depends on 5) The method according to claim 5, wherein the metal compound is at least one selected from the group consisting of MgO and BaSnO3. ### Claim 12 (depends on 1) The method according to claim 1, wherein the substrate is formed of Si having a (100) plane orientation. ### Claim 13 (depends on 1) The method according to claim 1, wherein the substrate is formed of MgO having a (100) or (110) plane orientation. ### Claim 14 (depends on 13) The method according to claim 13, wherein the thin film is epitaxially grown on the substrate. ### Claim 15 (depends on 1) The method according to claim 1, wherein the first material has a composition represented by BaTiO3, and a mixing ratio (X:Y) of the first material (X) and the second material (Y) in the mixture, in terms of molar ratio, is in a range of 1:0.01 to 1:1. ### Claim 16 (depends on 1) The method according to claim 1, wherein the first material has a composition represented by SrTiO3, and a mixing ratio (X:Y) of the first material (X) and the second material (Y) in the mixture, in terms of molar ratio, is in a range of 1:0.01 to 2:1. ### Claim 17 (depends on 1) The method according to claim 1, wherein the thin film is formed on the substrate by a sputtering method. ### Claim 18 A multilayer body comprising: a substrate; and a thin film formed on the substrate, wherein the thin film is formed of a first oxide containing A, Ti, and O, where A is at least one selected from the group consisting of Ba and Sr, some of oxide ions contained in the first oxide have been replaced by hydride ions, the substrate is formed of at least one selected from the group consisting of Si, Ge, and a metal compound that is different from the first oxide, and the metal compound is a substance (a) which has a higher oxidation-reduction potential than hydride ion, or (b) which is doped with hydrogen by heat treatment using a reducing agent composed of a hydride. ### Claim 19 (depends on 18) The multilayer body according to claim 18, wherein the substrate is formed of at least one selected from the group consisting of Si and Ge. ### Claim 20 (depends on 18) The multilayer body according to claim 18, wherein the metal compound is at least one selected from the group consisting of Al2O3, SnO, GaAs, GaN, MgO, and BaSnO3. ### Claim 21 A multilayer body comprising: a substrate; and a thin film formed on the substrate, wherein the thin film is formed of a first oxide containing A, Ti, and O, where A is at least one selected from the group consisting of Ba and Sr, some of oxide ions contained in the first oxide have been replaced by hydride ions, and a hydrogen content in the substrate is less than or equal to 0.05 mol %. ### Claim 22 (depends on 21) The multilayer body according to claim 21, wherein the substrate is formed of at least one selected from the group consisting of Si and Ge. ### Claim 23 (depends on 18) The multilayer body according to claim 18, wherein the first oxide has a crystal structure. ### Claim 24 (depends on 23) The multilayer body according to claim 23, wherein the crystal structure is a perovskite structure. ### Claim 25 (depends on 18) The multilayer body according to claim 18, wherein the first oxide has a composition represented by AxTiO3-yHz (0.4≤x≤0.8, 0.1≤y≤1.0, 0.1≤z≤1.0).