# US 2022/0033744 A1 · Cleaning liquid composition

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2022/0033744 A1
- Document ID: US20220033744A1
- Status: Published application
- Kind: A1
- Application number: 17/275,629
- Filed: 2019-09-19
- Published: 2022-02-03
- Earliest claimed: 2018-09-20
- Assignees: Kanto Kagaku Kabushiki Kaisha
- Applicants: Kanto Kagaku Kabushiki Kaisha
- Inventors: Areji TAKANAKA
- Web page: https://patentgrep.com/patent/US20220033744A1

## CPC

- C11D 7/261: {Alcohols; Phenols}
- C11D 7/265: {Carboxylic acids or salts thereof}
- C11D 1/16: derived from divalent or polyvalent alcohols
- C11D 3/0042: {Reducing agents}
- C11D 3/378: {(Co)polymerised monomers containing sulfur, e.g. sulfonate}
- C11D 7/08: Acids
- C11D 7/266: {Esters or carbonates}
- C11D 7/267: {Heterocyclic compounds}
- C11D 7/3209: {Amines or imines with one to four nitrogen atoms; Quaternized amines}
- C11D 7/50: Solvents
- H10P 70/27: {during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers}
- H10P 70/277: {the processing being a planarisation of conductive layers}
- C11D 2111/22: Electronic devices, e.g. PCBs or semiconductors
- C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An object of the present invention is to provide a cleaning liquid that effectively removes in a short time organic residues and abrasive grains derived from a slurry in a semiconductor substrate in which a Co contact plug and/or Co wiring are present. The present invention relates to a cleaning liquid composition for cleaning a substrate having a Co contact plug and/or Co wiring, which contains one or more reducing agents and water. Furthermore, the present invention relates to a cleaning liquid composition for cleaning a substrate having Co and not having Cu, which contains one or more reducing agents and water and has a pH of 3 or more and less than 12.

## Claims

### Claim 1

A cleaning liquid composition for cleaning a substrate, the cleaning liquid composition containing one or more reducing agents and water, wherein:
(a) the substrate has Co contact plug and/or Co wiring, or
(b) the substrate has Co and does not have Cu, and a pH of the cleaning liquid composition is 3 or more and less than 12.

### Claim 2

(canceled)

### Claim 3 (depends on 1)

The cleaning liquid composition according to claim 1, wherein in item (b), the substrate has a Co contact plug and/or Co wiring.

### Claim 4 (depends on 1)

The cleaning liquid composition of claim 1, wherein the reducing agent contains one or more selected from the group consisting of five-membered ring or six-membered ring compounds in which two or more hydroxyl groups are directly bonded to the ring.

### Claim 5 (depends on 4)

The cleaning liquid composition of claim 4, wherein the reducing agent is one or more selected from the group consisting of ascorbic acid, pyrogallol and methyl gallate.

### Claim 6 (depends on 1)

The cleaning liquid composition of claim 1, further containing one or more polysulfonic acid compounds as a surfactant.

### Claim 7 (depends on 1)

A stock solution composition for the cleaning liquid composition of claim 1, which is used to obtain the cleaning liquid composition by 10 times to 1000 times dilution.

### Claim 8 (depends on 1)

A method for manufacturing a semiconductor substrate, comprising a step of bringing the cleaning liquid composition of claim 1 into contact with the substrate having a Co contact plug and/or Co wiring.

### Claim 9 (depends on 8)

The method for manufacturing a semiconductor substrate of claim 8, comprising a step of chemical mechanical polishing (CMP) of the substrate having a Co contact plug and/or Co wiring, before the step of bringing the cleaning liquid composition into contact with the substrate having a Co contact plug and/or Co wiring.

### Claim 10 (depends on 8)

The method for manufacturing a semiconductor substrate of claim 8, wherein the step of bringing the cleaning liquid composition into contact with the substrate having a Co contact plug and/or Co wiring is a step of cleaning the substrate having a Co contact plug and/or Co wiring.